Publikationen

Unsere Arbeiten erscheinen in Zeitschriften wie Nature Communications, Science Advances, Applied Physics Letters, Advanced Electronic Materials und den IEEE Transactions sowie auf den führenden Konferenzen für Bauelemente, Schaltungen und Entwurfsautomatisierung (IEDM, VLSI, DAC, DATE, ICCAD, ISCAS). Die Liste unten umfasst die Jahre 2022 bis 2026, gegliedert nach Jahr und Beitragstyp; ältere Arbeiten und aktuelle Zitationszahlen finden Sie im Google-Scholar-Profil von Prof. Kämpfe (Stand Oktober 2026: h-Index 42, über 6.800 Zitationen).

Ausgewählte Publikationen

Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem. R. Zhang, X. Li, C. Wan, R. Hoffmann, M. Hindenberg et al. Nature Communications 17, 189 (2026). 10.1038/s41467-025-66864-9
First demonstration of charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficient one-shot learning. Z. Zhou, H. Zhong, L. Jiao, Z. Zheng, H. Yang, T. Kämpfe, K. Ni, X. Li, X. Gong. Nature Communications 16, 8047 (2025). 10.1038/s41467-025-63190-y
Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives. M. Lederer, T. Kämpfe. Applied Physics Letters 126 (2025). 10.1063/5.0254762
Ferroelectric Hafnium Oxide: A Potential Game-Changer for Nanoelectronic Devices and Systems. D. Lehninger, F. Müller, Y. Raffel, S. Yang, M. Neuber, S. Abdulazhanov, T. Kämpfe, K. Seidel, M. Lederer. Advanced Electronic Materials (2025). 10.1002/aelm.202400686
A Homogeneous FeFET-based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search. X. Yin, Q. Huang, H. E. Berkam, F. Müller, S. Deng, A. Vardar et al. IEEE Transactions on Computer-Aided Design 44(5) (2025). 10.1109/TCAD.2024.3492994

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Preprints, Patente und Buchkapitel

Journalartikel

N Laleni, F Müller, G Cunarro, T Kämpfe, T Jang, "A High Efficiency Charge Domain Compute-In-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing", IEEE Journal of Exploratory Solid-State Computational Devices and Circuits … (2024).
A Sünbül, D Lehninger, A Pourjafar, S Yang, F Müller, R Olivo, T Kämpfe et al., "Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture", Memories - Materials, Devices, Circuits, 100110 (2024).
X Yin, F Müller, AF Laguna, C Li, Q Huang, Z Shi, M Lederer, N Laleni et al., "Deep random forest with ferroelectric analog content addressable memory", Science Advances 10 (23) (2024).
K Seidel, D Lehninger, A Sünbül, R Hoffmann, R Revello, N Yadav et al., "Integration of ferroelectric devices for advanced in-memory computing concepts", Japanese Journal of Applied Physics 63 (5) (2024).
X Yin, Y Qian, A Vardar, M Günther, F Müller, N Laleni, Z Zhao, Z Jiang et al., "Ferroelectric compute-in-memory annealer for combinatorial optimization problems", Nature Communications 15 (1), 2419 (2024).
PJ Artz, QH Le, DK Huynh, P Scholz, T Kämpfe, S Lehmann, T Mausolf et al., "Design and Characterization of a Variable Gain -Band LNA for Optimized Link Budgeting for a 6G Receiver in 22FDX", IEEE Transactions on Microwave Theory and Techniques 72 (2), 1008-1017 (2024).
A Sunil, M Rana SK, M Lederer, Y Raffel, F Müller, R Olivo, R Hoffmann et al., "Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility", Advanced Intelligent Systems, 2300461 (2024).
H Xu, J Yang, T Kämpfe, C Zhuo, K Ni, X Yin, "On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory", IEEE Electron Device Letters 45 (1), 112-115 (2024).

Konferenzbeiträge

Preprints, Patente und Buchkapitel

X Yin, HE Barkam, F Müller, Y Jiang, M Imani, S Abdulazhanov, A Vardar et al., "A Remedy to Compute-in-Memory with Dynamic Random Access Memory: 1FeFET-1C Technology for Neuro-Symbolic AI", arXiv preprint arXiv:2410.15296 (2024).
T Kampfe, N Laleni, "ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT TRANSISTOR, AND MEMORY CELL", US Patent App. 18/267,797 (2024).

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Preprints, Patente und Buchkapitel

M Lederer, T Kämpfe, "Resistance Network having four Contacts per Memory Cell", US Patent App. 17/906,083 (2023).
T Kämpfe, "Piezoelectric Element and Method for Producing a Piezoelectric Element", US Patent App. 17/757,588 (2023).
T Kämpfe, P Polakowski, K Seidel, "Movable Piezo Element and Method For Producing a Movable Piezo Element", US Patent App. 17/757,365 (2023).
S De, M Lederer, Y Raffel, D Lehninger, S Thunder, MPM Jank, T Ali et al., "Application of Ferroelectrics: Monolithic‐3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses", Advanced Ultra Low‐Power Semiconductor Devices: Design and Applications, 235-260 (2023).
S De, S Thunder, D Lehninger, MPM Jank, M Lederer, Y Raffel, K Seidel et al., "Low Power Vertically Stacked One Time Programmable Multi-bit IGZO-based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference …", Embedded Artificial Intelligence: Devices, Embedded Systems, and Industrial … (2023).

Journalartikel

Konferenzbeiträge

Preprints, Patente und Buchkapitel

X Yin, Q Huang, F Müller, S Deng, A Vardar, S De, Z Jiang, M Imani et al., "A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory", arXiv preprint arXiv:2209.11971 (2022).
X Guo, X Ma, F Muller, K Ni, T Kampfe, Y Liu, V Narayanan, X Li, "Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security", arXiv preprint arXiv:2208.14678 (2022).
S De, HH Le, MA Baig, YJ Lee, DD Lu, T Kämpfe, "Alleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network", arXiv preprint arXiv: 2103.03111 (2022).
X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo et al., "An ultra-compact single fefet binary and multi-bit associative search engine", arXiv preprint arXiv:2203.07948 (2022).
S Thunder, S De, F Muller, T Ali, M Lederer, T Kämpfe, PT Huang, "Variation Aware Training of Hybrid Precision Neural Networks with 28nm HKMG FeFET Based Synaptic Core", arXiv preprint arXiv:2202.10912 (2022).
S De, M Lederer, Y Raffel, D Lehninger, S Thunder, MPM Jank, T Ali et al., "Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses", Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors … (2022).
N Laleni, T Soliman, A Vardar, T Kämpfe, "Emerging In-memory Computing for Neural Networks", Intelligent Edge-Embedded Technologies for Digitising Industry, 153-166 (2022).

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