Technische Universität Braunschweig
  • Study & Teaching
    • Beginning your Studies
      • Prospective Students
      • Degree Programmes
      • Application
      • Why TU Braunschweig?
    • During your Studies
      • Fresher's Hub
      • Term Dates
      • Courses and Qualifications
      • Practical information
      • Beratungsnavi
      • Financing and Costs
      • Special Circumstances
      • Health & Wellbeing
      • Campus life
    • At the End of your Studies
      • Career Service
      • Alumni
      • Discontinuation and Pre-Certification
      • After graduation
    • Strategies and Quality Management
      • TU Teaching Award
    • For Teaching Staff
      • Strategy, Offers and Information
      • Learning Management System Stud.IP
    • Contact
      • Study Service Centre
      • Academic Advice Service
      • Student Office
      • Department 16 - Academic and Student Affairs
      • Career Service
  • Research
    • Research Profile
      • Core Research Areas
      • Clusters of Excellence at TU Braunschweig
      • Research Projects
      • Research Centres
      • Professors‘ Research Profiles
    • Early Career Researchers
      • Support in the early stages of an academic career
      • PhD-Students
      • Postdocs
      • Junior research group leaders
      • Junior Professorship and Tenure-Track
      • Habilitation
      • Service Offers for Scientists
    • Research Data & Transparency
      • Transparency in Research
      • Research Data
      • Open Access Strategy
    • Research Funding
      • Research Funding Network
      • Research funding
    • Contact
      • Research Services
      • Academy for Graduates
  • Transfer
    • Transfer profile
      • Transfer strategy "TIES® with Impact"
      • Technology Transfer
      • Knowledge Transfer
      • Relationship Management
    • Innovation
      • Startups
      • Patents
    • Offers for schools and pupils
    • For enterprises
      • Friends & Supporters
    • For Alumni*ae
    • For everyone
  • International
    • International Students
      • Why Braunschweig?
      • Degree seeking students
      • Exchange Studies
      • TU Braunschweig Summer School
      • Students from German Schools Abroad
      • Refugees
      • International Student Support
      • International Career Service
    • Going Abroad
      • Studying abroad
      • Internships abroad
      • Teaching and research abroad
      • Working abroad
    • International Researchers
      • Welcome Support for International Researchers
      • Service for Host Institutes
    • Language and intercultural competence training
      • Learning German
      • Learning Foreign Languages
      • Intercultural Communication
    • International Profile
      • Internationalisation
      • International Cooperations
      • Strategic partnerships
      • International networks
    • International House
      • About us
      • Contact & Office Hours
      • News and Events
      • Newsletter, Podcast & Videos
      • Job Advertisements
  • TU Braunschweig
    • Our Profile
      • Aims & Values
      • Regulations and Guidelines
      • The University Development Initiative 2030
      • Ecoversity – the TU Braunschweig as a university ecosystem
      • Equal Opportunity
      • Diversity
      • Sustainability
      • Facts & Figures
      • Our History
    • Presidency & Organisation
      • Executive Board
      • Designated Offices
      • Administration
      • Facilities
      • Committees
      • Student body
    • Career
      • Working at TU Braunschweig
      • Vacancies
      • Information and Offers for New Employees
    • Faculties
      • Carl-Friedrich-Gauß-Fakultät
      • Faculty of Life Sciences
      • Faculty of Architecture, Civil Engineering and Environmental Sciences
      • Faculty of Mechanical Engineering
      • Faculty of Electrical Engineering, Information Technology, Physics
      • Faculty of Humanities and Education
      • Institutes from A to Z
    • Events
  • Search
  • Quicklinks
    • People Search
    • Webmail
    • cloud.TU Braunschweig
    • Messenger
    • Cafeteria
    • TUconnect (student platform)
    • Emergency
    • Stud.IP
    • Library Catalogue
    • Research Information System
    • Information Portal (employees)
    • Link Collection
    • DE
    • EN
    • Instagram
    • YouTube
    • LinkedIn
    • Mastodon
    • Bluesky
Menu
  • TU Braunschweig
  • Faculties
  • Faculty of Electrical Engineering, Information Technology, Physics
  • Institutes
  • Institute of Neuromorphic Computing
Logo Institut für Neuromorphic Computing
Publications
  • Institute of Neuromorphic Computing
    • Research
    • Teaching
    • Team
    • Publications
    • News
    • Contact

Publications

Farbige Oberfläche eines Siliziumwafers

Our work appears in journals such as Nature Communications, Science Advances, Applied Physics Letters, Advanced Electronic Materials and the IEEE Transactions, and at the leading conferences on devices, circuits and design automation (IEDM, VLSI, DAC, DATE, ICCAD, ISCAS). The list below covers 2022 to 2026, organised by year and type of contribution; earlier work and current citation metrics are available in Prof. Kämpfe's Google Scholar profile (as of October 2026: h-index 42, more than 6,800 citations).

Selected Publications

  • Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem. R. Zhang, X. Li, C. Wan, R. Hoffmann, M. Hindenberg et al. Nature Communications 17, 189 (2026). 10.1038/s41467-025-66864-9
  • First demonstration of charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficient one-shot learning. Z. Zhou, H. Zhong, L. Jiao, Z. Zheng, H. Yang, T. Kämpfe, K. Ni, X. Li, X. Gong. Nature Communications 16, 8047 (2025). 10.1038/s41467-025-63190-y
  • Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives. M. Lederer, T. Kämpfe. Applied Physics Letters 126 (2025). 10.1063/5.0254762
  • Ferroelectric Hafnium Oxide: A Potential Game-Changer for Nanoelectronic Devices and Systems. D. Lehninger, F. Müller, Y. Raffel, S. Yang, M. Neuber, S. Abdulazhanov, T. Kämpfe, K. Seidel, M. Lederer. Advanced Electronic Materials (2025). 10.1002/aelm.202400686
  • A Homogeneous FeFET-based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search. X. Yin, Q. Huang, H. E. Berkam, F. Müller, S. Deng, A. Vardar et al. IEEE Transactions on Computer-Aided Design 44(5) (2025). 10.1109/TCAD.2024.3492994
2026

Journal articles

  • R. Zhang, X. Li, C. Wan, R. Hoffmann, M. Hindenberg, Y. Xu, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, T. Kämpfe, G. Yu, and X. Han, "Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem", Nature Communications 17 (189) DOI: 10.1038/s41467-025-66864-9
  • X.H. Li, Y.Q. Xu, C.H. Wan, R. Zhang, M. Hindenberg, R. Hoffmann, S.Q. Liu, T.Y. Zhang, S.L. Xiong, D.H. Kong, J.H. Xia, F.S. Gao, Z.Y. Nie, T. Kämpfe, G.Q. Yu, and X.F. Han, "Feature Disentangling and Combination Implemented by Spin-Orbit Torque Magnetic Tunnel Junctions", Advanced Intelligent Systems
  • R Zhang, N Laleni, S Ranjbar, A Tsiougkos, N Yadav, V Pavlidis et al., "Stochastic-MTJ Sampler Arrays for In-Array Monte-Carlo Estimation", Advanced Electronic Materials (2026).
  • Y Zhou, M Ma, Z Zhu, T Kämpfe, Z Yan, C Zhuo, X Yin, "FaHDCiM: Fast and Energy-Efficient Factorization in Hyperdimensional Computing via Compute-in-Memory", IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2026).
  • JH Hsuen, HY Liu, M Lederer, Y Raffel, K Seidel, T Kämpfe, S De, CY Lin et al., "Toward stable FeFET multi-level cell operations using novel weight freezing methodology with recovery cycling scheme for neuromorphic applications", Microelectronics Reliability 118, 116128 (2026).
  • A Vardar, L Zhang, A Rehmer, M Lupp, S Baskaran, O Abdelaal, F Müller et al., "People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing", Advanced Electronic Materials (2026).
  • Y Jiang, R Wang, T Kämpfe, C Zhuo, X Yin, "A Ferroelectric Multi-Level Cell Enabling In-Situ Hybrid DRAM-FeRAM Storage", IEEE Electron Device Letters 47 (5), 1005 - 1008 (2026).
  • Z Yang, Q Huang, Y Qian, J Cai, M Zhou, K Ni, T Kampfe, Z Yan, X Yin et al., "FeFET-Based Analog In-Memory Computing with Inherent Shift-and-Add Capability", IEEE Transactions on Computers 75 (5), 1863 - 1877 (2026).
  • S Yang, D Lehninger, M Neuber, A Pourjafar, Y Raffel, A Sünbül et al., "Performance Enhancement in Hafnium Oxide through Homogeneous and Heterogeneous Co-doping Strategies", Advanced Electronic Materials 12 (7) (2026).
  • Y Zhou, Z Yang, M Ma, X Huang, H Amrouch, Y Yang, T Kämpfe, Z Yan et al., "GTRCiM: Generic Temperature-Resilient Subthreshold-FeFET Based Compute-in-Memory", ACM Transactions on Design Automation of Electronic Systems (2026).
  • J Cai, Y Jiang, Z Yang, T Kämpfe, C Zhuo, X Yin, "Massively Parallel In-Memory Computing via Frequency Multiplexing in Ferroelectric Capacitive Memory Arrays", ACM Transactions on Design Automation of Electronic Systems (2026).

Conference papers

  • S Abdulazhanov, QH Le, D Lehninger, T Kämpfe, "Improved Design of mmWave Test Structures for BEoL Varactors Based on HfO2/ZrO2 Superlattice", Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and … (2026).
  • X Li, C Power, P Ren, J Won, L Pei, Y Hu, J Xiong, A Vardar, N Cao, X Hu et al., "PolySim: Deterministic Polynomial Surrogates for Cross-Modal Retrieval on CiM", IEEE/ACM 2026 International Conference on Computer-Aided Design (IEEE/ACM … (2026).
  • Y Jiang, R Wang, X Huang, Y Zhou, T Kämpfe, C Zhuo, X Yin, "DACAM: A High-Density One-Base-per-Cell Content Addressable Memory for Diversity-Aware Genomic Filtering", IEEE/ACM 2026 International Conference on Computer-Aided Design (IEEE/ACM … (2026).
  • O Abdelaal, A Vardar, D Mabrouki, T Kämpfe, "Bit-Errors As DropConnect: Noise-Aware Training for FeFET Compute-In-Memory", IEEE Nanotechnology Materials and Devices Conference (IEEE-NMDC) (2026).
  • H Abdo, V Dubey, D Wünsch, N Yadav, T Kämpfe, "Systematic Electrical and Reliability Evaluation of Ultra-Short-Reach Chiplet Interconnects Using a High-Speed Calibrated Segmented Transmitter", International Integrated Reliability Workshop (IIRW) (2026).
  • C Wan, R Zhang, S He, T Kämpfe, X Han, "Probabilistic Computing Using Magnetic Tunneling Junctions for Traveling Salesman Problem", IEEE Magnetics Society Intermag 2026 (2026).
  • S Abdulazhanov, QH Le, K Feng, F Müller, M Lederer, N Yadav, T Kämpfe, "mmWave characterization of BEoL-integrated MFM varactors in 22 nm FDSOI technology", 2026 IEEE International Symposium On Applications of Ferroelectrics (2026).
  • V Parekh, Z Zhao, PK Hsu, Y Qin, Y Song, ANMN Islam, N Cao, S Joshi et al., "An In-Situ Spatio-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage", IEEE Computer Society Annual Symposium on VLSI 2026 (2026).
  • X Li, A Vardar, F Müller, N Goli, U Tida, K Ni, XS Hu, T Kämpfe, R Qin, "CQ-CiM: Hardware-Aware Embedding Shaping for Robust CiM-Based Retrieval", Design Automation Conference (DAC) (2026).
  • OM Abdelaal, A Vardar, N Yadav, T Kämpfe, "Late Breaking Results: FeMFET Multi-Level Cell Capacity Limits for SNN-Based Compute-in-Memory Inference", Design Automation Conference (DAC) (2026).
  • N Laleni, T Kämpfe, T Jang, "ADC-Based Nonlinear Quantization for In-Memory Computing using FeFETs", 2026 IEEE International Symposium on Circuits and Systems (ISCAS), 479-483 (2026).
  • J Duan, SA Ovy, PK Hsu, Z Zhao, T Kampfe, X Gong, S Yu, V Narayanan et al., "Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell", 71st Annual IEEE International Electron Devices Meeting (IEDM) (2026).
  • J Duan, S Deng, R Biswas, SY Tauki, M Sizhe, R Joshi, T Kampfe, X Gong et al., "Toward Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking", 71st Annual IEEE International Electron Devices Meeting (IEDM) (2026).
  • F Müller, V Iurchuk, A Viegas, N Yadav, J Syndikus, R Seidel et al., "Highly Scaled FRAM Technology in 22FDX - Achieving Sub 1V Operation", 71st Annual IEEE International Electron Devices Meeting (IEDM) (2026).
2025

Journal articles

  •  T. Li, X. Guo, F. Müller, S. Abdulazhanov, X. Ma, H. Zhong, Y. Liu, V. Narayanan, H. Yang, K. Ni, T. Kämpfe and X. Li, "Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing", Nature Communications 16 (189) DOI: 10.1038/s41467-024-55380-x
  • D. Lehninger, F. Müller, Y. Raffel, S. Yang, M. Neuber, S. Abdulazhanov, T. Kämpfe, K. Seidel, and M. Lederer. "Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems", Advanced Electronics Materials, 2400686 DOI: 10.1002/aelm.202400686
  • Y. Qian, D. Huang, A. Vardar, N. Laleni, M. Zhou, K. Ni, T. Kämpfe, C. Zhuo, X. Yin. "Ferroelectric Compute-in-Memory Framework for Solving Pure and Mixed Strategy Nash Equilibrium", IEEE Transactions on Circuits and Systems I: Regular Papers DOI: 10.1109/TCSI.2025.3548871

  • A. Vardar, M. Günther, F. Müller, N. Laleni, K. Seidel, and T. Kämpfe. "Reliable Multi-Level Cell Programming in FeFET Arrays for In-Memory Computing", Japanese Journal of Applied Physics DOI: 10.35848/1347-4065/adc745
  • Y. Xiao, S. Deng, Z. Jiang, Y. Qin, Z. Zhao, R. Zhang, J. Howe, Y. Lee, J. Duan, R. Joshi, T. Kämpfe, T. Luo, T.-H. Hou, X. Gong, V. Narayanan, K. Ni, "Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory" IEEE Transaction on Electron Devices 72 (6) 3327 - 3334 DOI: 10.1109/TED.2025.3564273
  • M. Lederer and T Kämpfe. "Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives", Applied Physics Letters 126 (13) DOI: 10.1063/5.0254762
  • R. Zhang, C. Wan, Y. Xu, X. Li, R. Hoffmann, M. Hindenberg, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, T. Kämpfe, G. Yu, and X. Han, "Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies". Physical Review Applied 23 (5) DOI: 10.1103/PhysRevApplied.23.054073
  • Y. Jiang, K. Ni, T. Kämpfe, C. Zhuo, Z. Yan, and X. Yin, "CSA-CiM: Enhancing Multifunctional Computing-in-Memory With Configurable Sense Amplifiers". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 44 (5) 1869 - 1873 DOI: 10.1109/TCAD.2024.3506864

  • X. Yin, Q. Huang, H. E. Berkam, F. Müller, S. Deng, A. Vardar, S. De, Z. Jiang, M. Imani, U. Schlichtmann, X. S. Hu, C. Zhuo, T. Kämpfe, K. Ni, "A Homogeneous FeFET-based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search" IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 44 (5) 1856-1868 DOI: 10.1109/TCAD.2024.3492994

  • C. Li, X. Huang, Z. Xu, B. Wen, R. Mao, M. Zhou, T. Kämpfe, K. Ni, C. Li, C. Zhuo, X. Yin. "High-Performance In-Memory Bayesian Inference with Multi-Bit Ferroelectric FET". IEEE Transactions on Computers DOI: 10.1109/TC.2025.3576941
  • Z. Zhou, H. Zhong, L. Jiao, Z. Zheng, H. Yang, T. Kämpfe, K. Ni, X. Li, X. Gong. "First demonstration of charge-domain content addressable memory based on ferroelectric capacitive memory for 3 reliable and energy-efficient one-shot learning". Nature Communications (accepted)
  •  
  • A Vardar, N Laleni, S Baskaran, MM Sharifi, M Li, F Müller, M Günter et al., "A 28nm FeFET-Based Content-Addressable Memory for Energy-Efficient Similarity Search and Few-Shot Learning", IEEE Journal of the Electron Devices Society (2025).
  • S Yang, F Müller, Y Raffel, N Yadav, R Hoffmann, F Schöne, D Lehninger et al., "Temperature-dependent detrapping behavior of p-/n-type ferroelectric FETs with Si/SiGe channel", IEEE Electron Device Letters 46 (12), 2269 - 2272 (2025).
  • Z Zhou, H Zhong, L Jiao, Z Zheng, H Yang, T Kämpfe, K Ni, X Li, X Gong, "Charge-domain content addressable memory based on ferroelectric capacitive memory for reliable and energy-efficient one-shot learning", Nature Communications 16 (1), 8047 (2025).
  • R Zhang, C Wan, Y Xu, X Li, R Hoffmann, M Hindenberg, S Liu, D Kong et al., "Drift-resilient magnetic-tunnel-junction random-number generator via hybrid control strategies", Physical Review Applied 23, 054073 (2025).
  • Y Jiang, K Ni, T Kämpfe, C Zhuo, Z Yan, X Yin, "CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers", IEEE Transactions on Computer-Aided Design of Integrated Circuits and … (2025).

Conference papers

  • G. Fischer, D.K. Huynh, A.A. Mir, Q.H. Le, T. Kämpfe, H. Rücker. "Noise characterization of SiGe HBTs up to 170 GHz". 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (accepted)
  • K. Seidel, D. Lehninger, A. Sünbül, R. Hoffmann, R. Revello, N. Yadav, A. Vardar, H. Mähne, K. Bernert, S. Thiem, J. Barbot, T. Kämpfe, M. Lederer. "Integration und Demonstration der 1T1C FeMFET Speichertechnologie für In-Memory-Computing-Anwendungen". MikroSystemTechnik Kongress 2025 (accepted)
  • H. Zhong, Z. Zheng, Z. Chen, X. Ma, H. Yang, C. Jiang, T. Kämpfe, K. Ni, X. Gong, X. Li. "Enabling Energy-Efficient and High-Density eDRAM-LUT-Based Computing-in-Memory Using Anti-Ferroelectric Transistors". IEEE European Solid-State Electronics Research Conference (2025) (accepted)
  • J.-H. Hsuen, H.-Y. Liu, Y. Raffel, K. Seidel, T. Kämpfe, S. De, M. Lederer, C.-Y. Lin, T.-L. Wu. "Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications". 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2025) (accepted)
  • M. Neuber, M. S. Benyeogor, M. Czernohorsky, and T. Kämpfe. "Characterization of Pyroelectric Effect in Zr/Si Co-doped HfO2 Thin-Films" 2025 IEEE International Symposium on Applications of Ferroelectrics (IEEE ISAF-ICE-ISIF-PFM 2025) (presented)
  • D. Lehninger, A. Sünbül, H. Mähne, T. Kämpfe, A. Viegas, J. Barbot, K. Bernert, S. Thiem, K. Seidel, M. Lederer. 2025 IEEE International Memory Workshop DOI: 10.1109/IMW61990.2025.11026934
  • N. Laleni, S. Ranjbar, R. Zhang, A. Tsiougkos, N. Yadav, T. Kämpfe. "Integrating P-bits in MTJs: A Bridge to Efficient Stochastic Computing". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083955
  • A. Vardar, L. Zhang, M. Lupp, A. Rehmer, N. Yadav, T. Kämpfe. "People Counting and Positioning Using Low-Resolution Infrared Images for Ressource Constrained Edge Inference". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083958
  • N. Yadav, E.K. Falidas, D. Lehninger, K. Seidel, T. Kämpfe. "Low Power and Rail-to-Rail StrongARM DL-Latch Comparator: Design, Analysis and Performance". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083896
  • S. Deng, J. Howe, S. Ma, S. Y. Tauki, Z. Zhao, J. Duan, Y. Lee, Y. Qin, R. Joshi, T. Kämpfe, X. Gong, V. Narayanan, K. Ni. "Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation". 2025 International VLSI Symposium on Technology and Circuits DOI: 10.23919/VLSITechnologyandCir65189.2025.11074964
  • T. Li, T. Kämpfe, J. Wang, K. Ni, V. Narayanan, H. Yang, and X. Li, "PUFiM: A Robust and Efficient FeFET-Based Security Solution Merging Physical Unclonable Function with Compute-in-Memory for Edge AI". 2025 62th ACM/IEEE Design Automation Conference (DAC). DOI: 10.1109/DAC63849.2025.11132800
  • Y. Qian, X. Huang, R. Wang, Z. Yang, M. Zhou, T. Kämpfe, K. Ni, C. Zhuo, X. Yin, "Device-Algorithm Co-Design of Ferroelectric Compute-in-Memory In-Situ Annealer for Combinatorial Optimization Problems". 2025 62th ACM/IEEE Design Automation Conference (DAC). DOI: 10.1109/DAC63849.2025.11133307
  • A. Vardar, N. Laleni, M. Li, M. M. Sharifi, M. Günter, F. Müller, Y. Qian, C. Zhuo, X. Yin, M. Niemier, X. S. Hu, K. Seidel, K. Ni and T. Kämpfe, "28nm Ferroelectric Field Effect Transistor Based Associative Memory Array for Few-Shot Learning and Genome Analysis". 2025 International VLSI Symposium on Technology, Systems and Applications (VSLI-TSA) DOI: 10.1109/VLSITSA64674.2025.11047064
  • I. Kuznietsov, H.-Y. Liu, Y. Raffel, T. Kämpfe, K. Seidel, M. Lederer, T.-L. Wu. "Investigation of the Gate Dimension Influences on Performance and Reliability of Silicon-Doped Hafnium Oxide (HSO) FeFETs". 2025 International VLSI Symposium on Technology, Systems and Applications (VSLI-TSA) DOI: 10.1109/VLSITSA64674.2025.11047015
  • A. Vardar, F. Müller, G. F. C. Podesta, N. Laleni, N. Yadav and T. Kämpfe. "Memory-Efficient Spiking Neural Networks Using MLC FeFETs and Mixed Quantization". IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS) (presented)
  • A. Vardar, F. Müller, G. F. C. Podestá, N. Laleni, N. Yadav and T. Kämpfe. "Genetic Algorithm-Driven IMC Mapping for CNNs Using Mixed Quantization and MLC FeFETs". Design, Automation and Test in Europe (DATE) 2025 DOI: 10.23919/DATE64628.2025.10992694
  • S. Yang, Y. Raffel, R. Olivo, R. Hoffmann, D. Lehninger, O. Ostien, M. Simon, K. Seidel, T. Kämpfe, G. Gerlach, and M. Lederer, "Defect dynamics and Flicker noise in ferroelectric FETs at cryogenic temperatures". International Reliability Physics Symposium (IRPS) 2025 DOI: 10.1109/IRPS48204.2025.10983580
  • J. Barbot, M. Peller, I. E. Robert, K. Bernert, H. Mähne, S. Thiem, D. Lehninger, A. Sünbül, K. Seidel, T. Kämpfe. "Data Retention in co-doped HZO FeCAPs: Roles of FE Thickness and Thermal Budget". IEEE Electron Devices Technology and Manufacturing (EDTM 2025) DOI: 10.1109/EDTM61175.2025.11040648
  • S. Yang, Y. Raffel, R. Olivo, F. Müller, R. Hoffmann, D. Lehninger, O. Ostien, M. Simon, K. Seidel, T. Kämpfe, M. Lederer, G. Gerlach. "Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors". 22nd Non-Volatile Memory Technology Symposium (NVMTS) DOI: 10.1109/IRPS48204.2025.10983580
  • K. Feng, Q. H. Le, T. Kämpfe and D. Kissinger. "A 120-GHz Sub-6 dB NF and 19 dB Gain Low Noise Amplifier in 22-nm FDSOI". German Microwave Conference (GeMIC) 2025 DOI: 10.23919/GeMiC64734.2025.10979124
  • F. Ahmed, K. Feng, Q.H. Le and T. Kämpfe. "Miniaturized 60 GHz Branch-Line Coupler Using Dual Slow-Wave Techniques in 22-nm FDSOI". German Microwave Conference (GeMIC) 2025 DOI:  10.23919/GeMiC64734.2025.10979073
  • Q. H. Le, K. Feng, T. Kämpfe. "Analysis of Calibration and De-embedding for On-Wafer Characterization up to 170 GHz in 22-nm FDSOI CMOS Technology". IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) DOI: 10.1109/SiRF63957.2025.11077062
  • G Fischer, DK Huynh, AA Mir, QH Le, T Kämpfe, H Rücker, "Noise Characterisation of SiGe HBTs Up to 170 GHz", 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and … (2025).
  • J Cai, AF Laguna, Z Yang, Y Yang, T Kämpfe, Z Yan, C Zhuo, X Yin, "FACAM: Design and Optimization of A Compact Energy Efficient FeFET-Based Analog Content Addressable Memory", 2025 IEEE/ACM International Conference On Computer-Aided Design (ICCAD) (2025).
  • M Neuber, MS Benyeogor, T Kämpfe, "Characterization of the Pyroelectric Effect in Zr/Si Co-Doped HfO 2 Thin Films", 2025 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (2025).
  • D Lehninger, A Sünbül, H Mähne, T Kämpfe, A Viegas, J Barbot et al., "Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory", 2025 IEEE International Memory Workshop (IMW) (2025).
  • Y Zhou, T Kämpfe, K Ni, H Amrouch, C Zhuo, X Yin, "TReCiM: Lower Power and Temperature-Resilient Multibit 2FeFET-1T Compute-in-Memory Design", ICCAD '24: Proceedings of the 43rd IEEE/ACM International Conference on … (2025).
  • T Li, H Zhong, Y Xu, V Narayanan, K Ni, H Yang, T Kämpfe, X Li, "REMNA: Variation-Resilient and Energy-Efficient MLC FeFET Computing-in-Memory Using NAND Flash-Like Read and Adaptive Control", ICCAD '24: Proceedings of the 43rd IEEE/ACM International Conference on … (2025).
  • C Ni, S Chen, CK Liu, L Liu, M Imani, T Kämpfe, K Ni, M Niemier, XS Hu et al., "TAP-CAM: A Tunable Approximate Matching Engine based on Ferroelectric Content Addressable Memory", ICCAD '24: Proceedings of the 43rd IEEE/ACM International Conference on … (2025).
  • J Duan, Y Xu, Z Zhao, A Lu, J Read, M Imani, T Kämpfe, X Gong, S Yu et al., "Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET", 2024 IEEE International Electron Device Meeting (IEDM) (2025).
  • H Zhong, Z Zheng, L Jiao, Z Zhou, C Sun, W Tang, T Kämpfe et al., "First demonstration of AFeFET Based Capacitor-Less eDRAM Computing-in-Memory Featuring 36.4 Mb/mm2 High Memory Density, 105 s Long Retention Time, and 1012 High Endurance", 2024 IEEE International Electron Device Meeting (IEDM) (2025).
  • S Deng, Y Xiao, Z Jiang, Y Qin, Z Zhao, R Zhang, J Howe, Y Lee, J Duan et al., "First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory", 2024 IEEE International Electron Device Meeting (IEDM) (2025).

Preprints, patents and book chapters

  • R. Zhang, C. Wan, Y. Xu, X. Li, R. Hoffmann, M. Hindenberg, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, T. Kämpfe, G. Yu, and X. Han, "Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies". arxiv preprint arXiv:2501.15206, DOI: 
    arXiv:2501.15206
  • T. Kämpfe, R. Zhang, X. Li, C.-H. Wan, R. Hoffmann, M. Hindenberg, Y. Xu, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, G. Yu, and X. Han. "Probabilistic Greedy Algorithm Solver Using Magnetic Tunneling Junctions for Traveling Salesman Problem". researchsquare rs-5700548, DOI: 10.21203/rs.3.rs-5700548/v1
  • Z. Zhao, V. Darshana Parekh, P.-K. Hsu, Y. Qin, Y. Song, N. A. N. M. Islam, N. Cao, S. Joshi, T. Kämpfe, M. Jung, K. Seo, K. Kim, W. Kim, D. Ha, S. Dutta, A. Sengupta, X. Gong, S. Yu, V. Narayanan, K. Ni. "An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage". arxiv preprint arXiv:2501.15206, DOI: 10.48550/arXiv.2503.23685
  • Z. Jiang, A. N. M. N. Islam, Z. Han, Z. Zhao, F. Müller, J. Duan, H. Mulaosmanovic, S. Dünkel, S. Beyer, S. Dutta, V. Narayanan, T. Kämpfe, S. G. Cardwell, F. Chance, A. Sengupta, K. Ni. "A Bio-inspired Asymmetric Double-Gate Ferroelectric FET for Emulating Astrocyte and Dendrite Dynamics in Neuromorphic Systems", DOI: 10.48550/arXiv.2504.14466
  • Y. Qian, X. Huang, R. Wang, Z. Yang, M. Zhou, T. Kämpfe, C. Zhuo, X. Yin. "Device-Algorithm Co-Design of Ferroelectric Compute-in-Memory In-Situ Annealer for Combinatorial Optimization Problems", DOI: 
    10.48550/arXiv.2504.21280
  • A Chakraborty, F Müller, T Kämpfe, S Sahay, "Ferroelectric FET-based Logic-in-Memory Encoder for Hyperdimensional Computing", arXiv preprint arxiv:2512.20302 (2025).
  • Y Qian, A Vardar, K Seidel, D Lehninger, M Lederer, Z Shi, C Zhuo, K Ni et al., "BEOL Ferroelectric Compute-in-Memory Ising Machine for Simulated Bifurcation", arXiv preprint arXiv:2512.17165 (2025).
  • SA Ovy, J Duan, MAI Romel, F Muller, T Kampfe, K Ni, S George, "In-Situ Encryption of Single-Transistor Nonvolatile Memories without Density Loss", arXiv preprint arXiv:2512.03461 (2025).
  • TN Afee, J Hutchins, MM Islam, T Kampfe, A Aziz, "Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)", arXiv preprint arXiv:2508.02737 (2025).
  • T Kirchner, T Soliman, T Kaempfe, "Method for mapping an input vector to an output vector by means of a matrix circuit", US Patent 12,450,307 (2025).
2024

Journal articles

  • N Laleni, F Müller, G Cunarro, T Kämpfe, T Jang, "A High Efficiency Charge Domain Compute-In-Memory 1F1C Macro Using 2-bit FeFET Cells for DNN Processing", IEEE Journal of Exploratory Solid-State Computational Devices and Circuits … (2024).
  • A Sünbül, D Lehninger, A Pourjafar, S Yang, F Müller, R Olivo, T Kämpfe et al., "Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture", Memories - Materials, Devices, Circuits, 100110 (2024).
  • X Yin, F Müller, AF Laguna, C Li, Q Huang, Z Shi, M Lederer, N Laleni et al., "Deep random forest with ferroelectric analog content addressable memory", Science Advances 10 (23) (2024).
  • K Seidel, D Lehninger, A Sünbül, R Hoffmann, R Revello, N Yadav et al., "Integration of ferroelectric devices for advanced in-memory computing concepts", Japanese Journal of Applied Physics 63 (5) (2024).
  • X Yin, Y Qian, A Vardar, M Günther, F Müller, N Laleni, Z Zhao, Z Jiang et al., "Ferroelectric compute-in-memory annealer for combinatorial optimization problems", Nature Communications 15 (1), 2419 (2024).
  • PJ Artz, QH Le, DK Huynh, P Scholz, T Kämpfe, S Lehmann, T Mausolf et al., "Design and Characterization of a Variable Gain -Band LNA for Optimized Link Budgeting for a 6G Receiver in 22FDX", IEEE Transactions on Microwave Theory and Techniques 72 (2), 1008-1017 (2024).
  • A Sunil, M Rana SK, M Lederer, Y Raffel, F Müller, R Olivo, R Hoffmann et al., "Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility", Advanced Intelligent Systems, 2300461 (2024).
  • H Xu, J Yang, T Kämpfe, C Zhuo, K Ni, X Yin, "On the Challenges and Design Mitigations of Single Transistor Ferroelectric Content Addressable Memory", IEEE Electron Device Letters 45 (1), 112-115 (2024).

Conference papers

  • V Lasserre, S Koop-Brinkmann, M Caruso, D Dal Maistro, G Volpato et al., "A 5.6 dB NF Two-Stage 110-125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS", 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and … (2024).
  • S Abdulazhanov, QH Le, D Lehninger, A Sünbül, T Kämpfe, G Gerlach, "Microwave characterization of HfO2/ZrO2 superlattice MFM varactors integrated into BEoL", 2024 Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (2024).
  • D Lehninger, A Sünbül, K Bernert, H Mähne, S Yang, T Kämpfe, J Barbot et al., "Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM …", 2024 22nd Non-Volatile Memory Technology Symposium (NVMTS), 1-5 (2024).
  • A Vardar, M Günther, F Müller, N Laleni, T Kämpfe, "FeFET Multi-level Cell Programming for In-memory Computation Arrays", 2024 International Conference on Solid State Devices and Materials (2024).
  • D Lehninger, A Sünbül, H Mähne, S Yang, T Kämpfe, K Bernert, S Thiem et al., "Integration of Co-Doped (Hf,Zr)O₂ Ferroelectric Films and Superlattices into BEoL to Reduce Imprint and Improve Device-to-Device Variability in FeMFET and FRAM", IEEE Non-voltaile Memory Technology Symposium 2024 (2024).
  • M Neuber, M Benyeogor, T Kämpfe, M Lederer, "Effect of Annealing on Pyroelectric Response and Aging Behavior of Al-doped HfO2 Thin-films", EUROSENSORS XXXVI (2024).
  • C Ziegler, F Stapelfeldt, QH Le, T Kämpfe, V Issakov, "An F-Band Two-Stage Buffer Amplifier Gain-Boosted by Lossy RC-Over-Neutralization with a 16.1 GHz Bandwidth in 22nm FDSOI CMOS", European Microwave Integrated Circuits Conference (EuMIC) 2024 (2024).
  • K Feng, QH Le, T Kämpfe, "Design of a 120-GHz Compact Transformer-Based Power Amplifier in 22-nm FDSOI", Asia Pacific Microwave Conference (APMC) 2024 (2024).
  • K Feng, QH Le, T Kämpfe, "Wilkinson Power Dividers with Transmission Line and Lumped Elements in 22-nm FDSOI Up to 170 GHz", Asia Pacific Microwave Conference (APMC) 2024 (2024).
  • S Abdulazhanov, QH Le, D Lehninger, A Sünbül, T Kämpfe, G Gerlach, "BEoL Varactors Based on HfO2/ZrO2 Superlattice for mmWave Applications", 50th IEEE European Solid-State Electronics Research Conference (ESSERC) (2024).
  • S Abdulazhanov, QH Le, D Lehninger, A Sünbül, T Kämpfe, G Gerlach, "Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications", 2024 Device Research Conference (DRC) (2024).
  • N Laleni, T Kämpfe, "An Efficient FeFET-Based Compute-In-Memory Macro Readout Inspired by the 3T Pixel Array Cell", International Conference on Synthesis, Modeling, Analysis and Simulation … (2024).
  • Z Yang, Q Huang, Y Qian, K Ni, T Kämpfe, X Yin, "Energy Efficient Dual Designs of FeFET-Based Analog In-Memory Computing with Inherent Shift-Add Capability", 2024 61th ACM/IEEE Design Automation Conference (DAC) (2024).
  • C Li, Z Xu, B Wen, R Mao, C Li, T Kämpfe, K Ni, X Yin, "FeBiM: Efficient and Compact Bayesian Inference Engine Empowered with Ferroelectric In-Memory Computing", 2024 61th ACM/IEEE Design Automation Conference (DAC) (2024).
  • Y Qian, Z Yang, K Ni, A Vardar, T Kämpfe, X Yin, "HyCiM: A Hybrid Computing-in-Memory QUBO Solver for General Combinatorial Optimization Problems with Inequality Constraints", DAC '24: Proceedings of the 61st ACM/IEEE Design Automation Conference 241, 1-6 (2024).
  • Y Qian, K Ni, T Kämpfe, C Zhuo, X Yin, "C-Nash: A Novel Ferroelectric Computing-in-Memory Architecture for Solving Mixed Strategy Nash Equilibrium", 2024 61th ACM/IEEE Design Automation Conference (DAC) (2024).
  • A Sünbül, D Lehninger, R Hoffmann, H Mähne, K Bernert, S Thiem et al., "Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors", 2024 IEEE International Reliability Physics Symposium (IRPS) (2024).
  • M Lederer, F Müller, R Hoffmann, R Olivo, Y Raffel, S Yang, S De et al., "Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions", 2024 IEEE International Memory Workshop (IMW), 1-4 (2024).
  • N Laleni, S Padma, T Kämpfe, T Jang, "Single Slope ADC with Reset Counting for FeFET-Based In-Memory Computing", 2024 IEEE International Symposium on Circuits & Systems (ISCAS) (2024).
  • A Vardar, F Müller, I Gecin, N Laleni, T Kämpfe, "Adaptive Mixed MLC-SLC FeFET Mapping for CIM AI Applications Through Simulated Annealing", 2024 IEEE International Conference on Artificial Intelligence Circuits and … (2024).
  • Q Huang, HE Barkam, Z Yang, J Yang, T Kämpfe, K Ni, GL Zhang, B Li et al., "A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation", Design, Automation and Test in Europe (DATE) 2024 (2024).
  • H Xu, J Yang, C Zhuo, T Kämpfe, K Ni, X Yin, "Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors", Design, Automation and Test in Europe (DATE) 2024 (2024).
  • Z Xu, CK Liu, C Li, R Mao, J Yang, T Kämpfe, M Imani, C Li, C Zhuo, X Yin, "FeReX: A Reconfigurable Design of Multi-bit Ferroelectric Compute-in-Memory for Nearest Neighbor Search", Design, Automation and Test in Europe (DATE) 2024 (2024).
  • T Li, H Zhong, J Wu, T Kämpfe, K Ni, V Narayanan, H Yang, X Li, "CafeHD: A Charge-Domain FeFET-Based Compute-in-Memory Hyperdimensional Encoder with Hypervector Merging", Design, Automation and Test in Europe (DATE) 2024 (2024).
  • S Deng, Y Xiao, Z Zhao, TJ Huang, T Kämpfe, V Narayanan, K Ni, "Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor Memory", 2023 International Electron Devices Meeting (IEDM) (2024).
  • Z Zhao, Y Xu, J Read, PK Hsu, Y Qin, TJ Huang, S Lim, K Kim, K Kim et al., "In-Situ Encrypted NAND FeFET Array for Secure Storage and Compute-in-Memory", 2023 International Electron Devices Meeting (IEDM) (2024).
  • S Chatterjee, S Kumar, A Sunil, S De, D Lehninger, M Jank, T Kämpfe et al., "Defying Temperature: Reliable Compute-in-Memory in Monolithic 3D using BEOL Ferroelectric TFT", 2023 International Electron Devices Meeting (IEDM) (2024).

Preprints, patents and book chapters

  • X Yin, HE Barkam, F Müller, Y Jiang, M Imani, S Abdulazhanov, A Vardar et al., "A Remedy to Compute-in-Memory with Dynamic Random Access Memory: 1FeFET-1C Technology for Neuro-Symbolic AI", arXiv preprint arXiv:2410.15296 (2024).
  • T Kampfe, N Laleni, "ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT TRANSISTOR, AND MEMORY CELL", US Patent App. 18/267,797 (2024).
2023

Journal articles

  • Y Xu, Y Xiao, Z Zhao, F Müller, A Vardar, X Gong, S George, T Kämpfe et al., "Embedding security into ferroelectric FET array via in situ memory operation", Nature Communications 14 (1), 8287 (2023).
  • T Soliman, S Chatterjee, N Laleni, F Müller, T Kirchner, N Wehn et al., "First demonstration of in-memory computing crossbar using multi-level Cell FeFET", Nature Communications 14, 6348 (2023).
  • P Duhan, T Ali, P Khedgarkar, K Kühnel, M Czernohorsky, M Rudolph et al., "Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory", IEEE Transactions on Electron Devices 70 (11) (2023).
  • D Lehninger, A Prabhu, A Sünbül, T Ali, F Schöne, T Kämpfe et al., "Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability (Adv. Phys. Res. 9/2023)", Advanced Physics Research 2 (9), 2370018 (2023).
  • Y Raffel, R Olivo, M Simon, L Vieler, R Hoffmann, S De, T Kämpfe et al., "Importance of Temperature Dependence of Interface Traps in High-K Metal Gate Stacks for Silicon Spin-Qubit Development", Applied Physics Letters 123 (3), 034002 (2023).
  • MR Sk, S Thunder, F Müller, N Laleni, Y Raffel, M Lederer, L Pirro et al., "1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation", IEEE Transactions on Nanotechnology 22, 424-429 (2023).
  • M Lederer, C Mart, T Kämpfe, D Lehninger, K Seidel, M Czernohorsky et al., "Evidence for ferroelastic switching and nanoscopic domains in polycrystalline Si-doped hafnium oxide films", Applied Physics Letters 123 (2), 022903 (2023).
  • MR Sk, S Pande, F Müller, Y Raffel, M Lederer, L Pirro, S Beyer, K Seidel et al., "Fixed charges at the HfO2/SiO2 Interface: Impact on the Memory Window of FeFET", Memories-Materials, Devices, Circuits and Systems 4, 100050 (2023).
  • X Ma, S Deng, J Wu, Z Zhao, D Lehninger, T Ali, K Seidel, S De, X He et al., "A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme with Disturb-Free Inference and High Endurance", IEEE Electron Device Letters 44 (7) (2023).
  • Y Raffel, F Müller, S Thunder, MR Sk, M Lederer, L Pirro, S Beyer et al., "28 nm high-k-metal gate ferroelectric field effect transistors based synapses-A comprehensive overview", Memories-Materials, Devices, Circuits and Systems 4, 100048 (2023).
  • A Sünbül, D Lehninger, M Lederer, H Mähne, R Hoffmann, K Bernert et al., "A study on imprint behavior of ferroelectric hafnium oxide caused by high-temperature annealing", physica status solidi (a) 220 (7), 2300067 (2023).
  • F Müller, S De, R Olivo, M Lederer, A Altawil, R Hoffmann, T Kämpfe, T Ali et al., "Multilevel Operation of Ferroelectric FET Memory Arrays Considering Current Percolation Paths Impacting Switching Behavior", IEEE Electron Device Letters 44 (5), 757 - 760 (2023).
  • X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo et al., "An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine", Advanced Intelligent Systems 5 (7), 2200428 (2023).
  • A Sünbül, D Lehninger, R Hoffmann, R Olivo, A Prabhu, F Schöne et al., "Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line Compatible Hafnium Zirconium Oxide Films", Advanced Engineering Materials 25 (4), 2201124 (2023).
  • PD Lomenzo, U Celano, T Kämpfe, SRC McMitchell, "Editorial: Advanced Characterization Methods for HfO2/ZrO2-based Ferroelectrics", Frontiers in Nanotechnology 5 (2023).
  • F Ali, T Ali, A Abbas, D Lehninger, MF Iqbal, MM Fadhali, IA Shaaban et al., "Switching Dynamics and Energy Storage Properties of Fluorite‐Structured Materials", physica status solidi (a) 220 (1) (2023).
  • M Sk, S Thunder, D Lehninger, S Sanctis, Y Raffel, M Lederer, M Jank et al., "Ferroelectric Content Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation", ACS Applied Electronic Materials 5 (2), 812-820 (2023).
  • V Parmar, F Müller, JH Hsuen, SK Kingra, L Nellie, Y Raffel, M Lederer et al., "Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence …", Advanced Intelligent Systems 5 (6), 2200389 (2023).
  • M Lederer, R Olivo, N Yadav, S De, K Seidel, LM Eng, T Kämpfe, "SPICE compatible semi-empirical compact model for ferroelectric hysteresis", Solid-State Electronics 199, 108501 (2023).
  • T Li, B Sun, H Zhong, Y Xu, V Narayanan, T Wang, Y Yu, T Kämpfe, K Ni et al., "ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-based Memories", ACM Transactions on Design Automation of Electronic Systems 29 (1), 1-18 (2023).

Conference papers

  • N Laleni, T Soliman, C de la Parra, F Müller, T Kirchner, A Guntoro et al., "Towards Variability Immune Scalable FeFET-based Macros for IMC DNN Accelerators", 2023 30th IEEE International Conference on Electronics, Circuits and Systems … (2023).
  • A Vardar, A Munir, N Laleni, S De, T Kämpfe, "Hardware Aware Spiking Neural Network Training and Its Mixed-Signal Implementation for Non-Volatile In-Memory Computing Accelerators", 2023 30th IEEE International Conference on Electronics, Circuits and Systems … (2023).
  • I Gecin, N Yadav, A Vardar, S Mojumder, K Seidel, T Kämpfe, "Read/write latency aware controller design for nonvolatile memory", 24th European Conference on Circuit Theory and Design (ECCTD 2023) (2023).
  • Y Raffel, R Olivo, M Lederer, L Pirro, V Parmar, T Chohan, D Lehninger et al., "Impact of High-K Deposition Process on the Noise Immunity of FeFETs and Their Applicability towards In-Memory-Computing", 2023 IEEE International Integrated Reliability Workshop (IIRW) (2023).
  • N Yadav, Y Raffel, RO Revello Olivo, T Kämpfe, L Pirro, K Seidel, "Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device", 2023 IEEE International Integrated Reliability Workshop (IIRW) (2023).
  • D Lehnert, K Seidel, A Sünbül, T Kämpfe, F Schöne, F Mähne, S Thieme et al., "Integration eines Ferroelektrischen Speichermoduls in das BEOL der XFAB XT018 Technologie", Mikrosystemtechnik Kongress 2023 (2023).
  • A Sünbül, D Lehninger, M Lederer, T Kämpfe, K Seidel, LM Eng, "Improved polarization by interface layer insertion in ferroelectric HfO2-based MFM capacitors", 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (2023).
  • S Abdulazhanov, QH Le, DK Huynh, M Lederer, Y Raffel, K Ni, X Yin et al., "Reconfigurable Ferroelectric Hafnium Oxide FeFET Fabricated in 28 nm CMOS Technology for mmWave Applications", IEEE 53rd European Solid-State Device Research Conference (ESSDERC) (2023).
  • M Rack, L Nyssens, QH Le, DK Huynh, T Kämpfe, JP Raskin, D Lederer, "A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain", European Microwave Integrated Circuits Conference (EuMIC) 2023 (2023).
  • S Abdulazhanov, DK Huynh, QH Le, T Kämpfe, G Gerlach, "A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology", European Microwave Integrated Circuits Conference (EuMIC) 2023 (2023).
  • DK Huynh, QH Le, S Lehmann, Z Zhao, G Bossu, W Arfoui, T Kämpfe et al., "Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation", European Microwave Integrated Circuits Conference (EuMIC) 2023 (2023).
  • A Vardar, L Zhang, S Jain, S Mojumder, N Laleni, S De, T Kämpfe, "The True Cost of Errors in Emerging Memory Devices: A Worst-Case Analysis of Device Errors in IMC for Safety-Critical Applications", International Conference on Synthesis, Modeling, Analysis and Simulation … (2023).
  • S Abdulazhanov, QH Le, DK Huynh, D Lehninger, T Kämpfe, G Gerlach, "Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz", Device Research Conference (DRC) (2023).
  • F Müller, S De, M Lederer, R Hoffmann, R Olivo, T Kämpfe, T Ali et al., "Multi-Level Operation of ferroelectric FET Memory Arrays for Compute-In-Memory Applications", International Memory Workshop 2023 (2023).
  • D Lehninger, A Sünbül, R Olivo, T Kämpfe, K Seidel, M Lederer, "Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress", 2023 IEEE International Memory Workshop (IMW) (2023).
  • K Seidel, D Lehninger, F Müller, Y Raffel, A Sünbül, R Revello et al., "Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?", 2023 IEEE International Memory Workshop (IMW), 1-4 (2023).
  • K Seidel, D Lehninger, S Abdulazhanov, A Sünbül, R Hoffmann et al., "A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes", 2023 IEEE International Interconnect Technology Conference (IITC) (2023).
  • S De, F Müller, M Lederer, Y Raffel, T Ali, L Pirro, S Dünkel, S Beyer et al., "28nm HKMG 1F-1R2 Multilevel Memory for Inference Engine Application", 2023 International Symposium on VLSI Technology, Systems and Applications … (2023).
  • V Parmar, F Müller, JH Hsuen, SK Kingra, Y Raffel, M Lederer, T Ali et al., "Demonstration of Differential Mode FeFET-Array for multi-precision storage and IMC applications", 2023 International Symposium on VLSI Technology, Systems and Applications … (2023).
  • JH Hsuen, M Lederer, L Kerkhofs, Y Raffel, L Pirro, T Chohan, T Kämpfe et al., "Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator–Semiconductor Capacitors with Good Endurance and Retention", 2023 International Symposium on VLSI Technology, Systems and Applications … (2023).
  • D Lehninger, K Seidel, A Sünbül, T Kämpfe, F Schöne, H Mähne et al., "The integration of a ferroelectric memory module into the back end of line (BEoL) of the XFAB XT018 technology for the realization of 1T1C-FeFETs Integration eines …", MikroSystemTechnik Kongress 2023: Mikroelektronik, Mikrosystemtechnik und … (2023).
  • QH Le, DK Huynh, S Lehmann, Z Zhao, C Schwan, T Kämpfe, M Rudolph, "22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range", IEEE Topical Meetings on Silicon Monolithic Integrated Circuits in RF … (2023).

Preprints, patents and book chapters

  • M Lederer, T Kämpfe, "Resistance Network having four Contacts per Memory Cell", US Patent App. 17/906,083 (2023).
  • T Kämpfe, "Piezoelectric Element and Method for Producing a Piezoelectric Element", US Patent App. 17/757,588 (2023).
  • T Kämpfe, P Polakowski, K Seidel, "Movable Piezo Element and Method For Producing a Movable Piezo Element", US Patent App. 17/757,365 (2023).
  • S De, M Lederer, Y Raffel, D Lehninger, S Thunder, MPM Jank, T Ali et al., "Application of Ferroelectrics: Monolithic‐3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses", Advanced Ultra Low‐Power Semiconductor Devices: Design and Applications, 235-260 (2023).
  • S De, S Thunder, D Lehninger, MPM Jank, M Lederer, Y Raffel, K Seidel et al., "Low Power Vertically Stacked One Time Programmable Multi-bit IGZO-based BEOL Compatible Ferroelectric TFT Memory Devices with Lifelong Retention for Monolithic 3D-Inference …", Embedded Artificial Intelligence: Devices, Embedded Systems, and Industrial … (2023).
2022

Journal articles

  • S Abdulazhanov, QH Le, DK Huynh, D Wang, D Lehninger, T Kämpfe et al., "THz thin film varactor based on integrated ferroelectric HfZrO2", ACS Applied Electronic Materials 5 (1), 189-195 (2022).
  • A Kazemi, F Müller, MM Sharifi, H Errahmouni, G Gerlach, T Kämpfe et al., "Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing", Scientific Reports 12, 19201 (2022).
  • S De, F Müller, S Thunder, S Abdulazhanov, N Laleni, M Lederer, T Ali et al., "28nm HKMG Based Current Limited FeFET Crossbar-Array for Inference Application", IEEE Transactions on Electron Devices 69 (12), 7194-7198 (2022).
  • S De, F Müller, N Laleni, M Lederer, Y Raffel, S Mojumder et al., "Demonstration of Multiply-Accumulate Operation with 28 nm FeFET Crossbar Array", IEEE Electron Device Letters 43 (12), 2081-2084 (2022).
  • Y Raffel, S De, M Lederer, R Revello Olivo, R Hoffmann, S Thunder et al., "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimisation in HfO2-Based FeFETs for In-Memory-Computing Applications", ACS Applied Electronic Materials 4 (11), 5292–5300 (2022).
  • D Lehninger, R Hoffmann, A Sünbül, H Mähne, T Kämpfe, K Bernert et al., "Ferroelectric FETs with Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio", IEEE Electron Device Letters 43 (11), 1866-1869 (2022).
  • M Lederer, T Vogel, T Kämpfe, N Kaiser, E Piros, R Olivo, T Ali, S Petzold et al., "Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia", Journal of Applied Physics 132 (8), 64102 (2022).
  • T Vogel, A Zintler, N Kaiser, N Guillaume, G Lefèvre, M Lederer, AL Serra et al., "Structural and electrical response of emerging memories exposed to heavy ion radiation", ACS Nano 16 (9), 14463-14478 (2022).
  • F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas et al., "Fluorite-Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices", Advanced Functional Materials 32 (31), 2205606 (2022).
  • M Neuber, M Lederer, M Konstantin, T Kämpfe, M Czernohorsky, K Seidel, "Pyroelectric and ferroelectric properties of hafnium oxide doped with Si via plasma enhanced ALD", Crystals 12 (8), 1115 (2022).
  • S De, F Müller, HH Le, M Lederer, T Ali, FX Liang, A Baig, D Lu, T Kämpfe, "READ-Optimized 28nm HKMG Multi-bit FeFET Synapses for Inference-Engine Applications", IEEE Journal of the Electron Devices Society 10, 637-641 (2022).
  • M Lederer, K Seidel, R Olivo, T Kämpfe, LM Eng, "Effect of Al2O3 Interlayers on the Microstructure and Electrical Response of Ferroelectric Doped HfO2 Thin Films", Frontiers in Nanotechnology 4 (2022).
  • M Lederer, D Lehninger, T Ali, T Kämpfe, "Review on the microstructure of ferroelectric hafnium oxides", physica status solidi (RRL)–Rapid Research Letters 16 (10) (2022).
  • P Pal, KJ Lee, S Thunder, S De, PT Huang, T Kämpfe, YH Wang, "Bending Resistant Multi-bit Memristor for Flexible Precision Inference Engine Application", IEEE Transactions on Electron Devices 69 (8), 4737-4743 (2022).
  • T Soliman, N Laleni, T Kirchner, F Müller, A Shrivastava, T Kämpfe et al., "FELIX: A Ferroelectric FET Based Low Power Mixed-Signal In-Memory Architecture for DNN Acceleration", ACM Transactions on Embedded Computing Systems 21 (6), 1-25 (2022).
  • H Lv, J Fidalgo, T Kämpfe, J Langer, J Wrona, B Ocker, P Freitas et al., "Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area product", Journal Physics D: Applied Physics 55 (26), 265302 (2022).
  • T Ali, D Lehninger, M Lederer, S Li, C Mart, K Mertens, R Hoffmann et al., "Tuning Hybrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films", Advanced Electronic Materials 8 (5), 2100837 (2022).
  • S De, A Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali et al., "Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications", Frontiers in Nanotechnology 3 (2022).

Conference papers

  • S De, Y Raffel, S Thunder, F Müller, M Lederer, T Kämpfe, "28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses", International Electron Devices & Materials Symposium (IEDMS) (2022).
  • Y Raffel, S De, R Olivo, S Thunder, R Hoffmann, K Seidel, T Kämpfe et al., "Achieving Excellent Neuromorphic Performance of Si:HfO2-based FeFETs by Interface Fluorination", IEEE Semiconductor Interface Specialists Conference (SISC) (2022).
  • Y Raffel, R Olivo, M Simon, R Hoffmann, S De, T Kämpfe, K Seidel et al., "Low Frequency Defect Analysis Methods in High-K Metal Gate Stacks for Spin-Qubit Application", IEEE Semiconductor Interface Specialists Conference (SISC) (2022).
  • A Vardar, L Zhang, S Hu, SB Jain, S Mojumder, N Laleni, A Shrivastava et al., "Layer Sensitivity Aware CNN Quantization for Resource Constrained Edge Devices", 2022 9th International Conference on Soft Computing & Machine Intelligence … (2022).
  • Y Raffel, M Drescher, R Revello Olivo, M Lederer, R Hoffmann, L Pirro et al., "Three Level Charge Pumping On Dielectric Hafnium Oxide Gate", 2022 IEEE International Integrated Reliability Workshop (IIRW) (2022).
  • C Sudarshan, T Soliman, T Kämpfe, C Weis, N Wehn, "FeFET versus DRAM based PIM Architectures: A Comparative Study", 30th IFIP/IEEE International Conference on Very Large Scale Integration … (2022).
  • S De, M Lederer, Y Raffel, F Müller, K Seidel, T Kämpfe, "Roadmap for Ferroelectric Memory: Challenges and Opportunities for IMC Applications", International SoC Design Conference (ISOCC) (2022).
  • Y Raffel, S Thunder, M Lederer, R Olivo, R Hoffmann, L Pirro, S Beyer et al., "Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications", 2022 International Conference on IC Design and Technology (ICICDT), 8-11 (2022).
  • Z Zhao, S Lehmann, QH Le, DK Huynh, T Kämpfe, S Malotaux et al., "22FDSOI device millimeter-wave characterization (up to 110 GHz and beyond)", IEEE European Solid State Device Research Conference (ESSDERC) (2022).
  • M Lederer, R Olivo, N Yadav, S De, K Seidel, L Eng, T Kämpfe, "Semi-empirical and Verilog-A compatible compact model for ferroelectric hysteresis behavior", International Conference on Simulation of Semiconductor Processes and … (2022).
  • S Abdulazhanov, DK Huynh, QH Le, D Lehninger, T Kämpfe, G Gerlach, "BEoL Integrated Hafnium Zirconium Oxide Varactors for Tunable mmWave Applications", IEEE European Solid State Device Research Conference (ESSDERC) (2022).
  • S Abdulazhanov, DK Huynh, QH Le, D Lehninger, T Kämpfe, G Gerlach, "Investigation of BEoL integrated ferroelectric thin-film HfO2 for mmWave varactor applications", 2022 IEEE International Symposium on Radio-Frequency Integration Technology … (2022).
  • K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello et al., "Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer", 2022 Symposium on VLSI Technology & Circuits (2022).
  • T Ali, R Olivo, S Kerdiles, D Lehninger, M Lederer, S De, AS Royet et al., "Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability", 2022 International Memory Workshop (IMW), 1-4 (2022).
  • Y Raffel, R Olivo, M Lederer, F Müller, R Hoffmann, T Ali, K Mertens et al., "Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination", 2022 International Memory Workshop (IMW), 1-4 (2022).
  • QH Le, DK Huynh, A Nayak, T Kämpfe, M Rudolph, "A Performance Study of 22nm FDSOI CMOS for Wideband 5G Power Amplifier Applications", German Microwave Conference 2022 (2022).
  • D Lehninger, H Mähne, T Ali, R Hoffmann, R Olivo, M Lederer, K Mertens et al., "Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology", 2022 IEEE International Memory Workshop (IMW), 1-4 (2022).
  • A Sünbül, T Ali, R Hoffmann, R Revello, Y Raffel, P Duhan, D Lehninger et al., "Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions", 2022 IEEE International Reliability Physics Symposium (IRPS) (2022).
  • P Aichroth, C Antes, P Gembatzka, H Graf, D Johnson, M Jung, T Kämpfe et al., "SEC-Learn: Sensor Edge Cloud for Federated Learning", International Conference on Embedded Computer Systems: Architectures … (2022).
  • A Vardar, S Hu, S Jain, S Mojumder, N Laleni, A Shrivastava, S De et al., "Mixed Intra Layer CNN Quantization for CIM Architectures", tinyML Summit 2022 (2022).
  • T Ali, K Mertens, R Olivo, D Lehninger, M Lederer, F Müller, M Rudolph et al., "Impact of Stack Structure Control and Ferroelectric Material Optimization in Novel Laminate HSO and HZO MFMIS FeFET", 2022 International Symposium on VLSI Technology, Systems and Applications … (2022).
  • DK Huynh, QH Le, S Lehmann, Z Zhao, G Bossu, W Arfaoui, D Wang et al., "Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement", 2021 European Microwave Integrated Circuits Conference (EuMIC) (2022).
  • S Li, D Fritsche, L Szilagyi, X Xu, QH Le, D Wang, T Kämpfe, C Carta et al., "A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP1dB and 5 dB NF", 2021 European Microwave Integrated Circuits Conference (EuMIC) (2022).
  • QH Le, DK Huynh, A Nayak, S Lehmann, Z Zhao, T Kämpfe, M Rudolph, "Large-Signal Modeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology", 2021 European Microwave Integrated Circuits Conference (EuMIC) (2022).
  • QH Le, DK Huynh, S Lehmann, Z Zhao, T Kämpfe, M Rudolph, "Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained- SiGe-Channel p-FETs in 22nm FDSOI Technology", 2021 European Microwave Integrated Circuits Conference (EuMIC) (2022).
  • K Seidel, D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, K Mertens et al., "Integration of hafnium oxide - based ferroelectric data storage devices into BEoL for low-power applications", Mikrosystemtechnik Kongress (2022).
  • N Laleni, T Soliman, F Müller, S Mojumder, T Kirchner, M Lederer et al., "In-Memory Computing exceeding 10000 TOPS/W using Ferroelectric Field Effect Transistors for EdgeAI Applications", Mikrosystemtechnik Kongress (2022).

Preprints, patents and book chapters

  • X Yin, Q Huang, F Müller, S Deng, A Vardar, S De, Z Jiang, M Imani et al., "A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory", arXiv preprint arXiv:2209.11971 (2022).
  • X Guo, X Ma, F Muller, K Ni, T Kampfe, Y Liu, V Narayanan, X Li, "Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security", arXiv preprint arXiv:2208.14678 (2022).
  • S De, HH Le, MA Baig, YJ Lee, DD Lu, T Kämpfe, "Alleviation of Temperature Variation Induced Accuracy Degradation in Ferroelectric FinFET Based Neural Network", arXiv preprint arXiv: 2103.03111 (2022).
  • X Yin, F Müller, Q Huang, C Li, M Imani, Z Yang, J Cai, M Lederer, R Olivo et al., "An ultra-compact single fefet binary and multi-bit associative search engine", arXiv preprint arXiv:2203.07948 (2022).
  • S Thunder, S De, F Muller, T Ali, M Lederer, T Kämpfe, PT Huang, "Variation Aware Training of Hybrid Precision Neural Networks with 28nm HKMG FeFET Based Synaptic Core", arXiv preprint arXiv:2202.10912 (2022).
  • S De, M Lederer, Y Raffel, D Lehninger, S Thunder, MPM Jank, T Ali et al., "Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses", Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors … (2022).
  • N Laleni, T Soliman, A Vardar, T Kämpfe, "Emerging In-memory Computing for Neural Networks", Intelligent Edge-Embedded Technologies for Digitising Industry, 153-166 (2022).
Photo credits on this page

For All Visitors

Vacancies of TU Braunschweig
Career Service' Job Exchange 
Merchandising

For Students

Term Dates
Courses
Degree Programmes
Information for Freshman
TUCard

Internal Tools

Glossary (GER-EN)
Change your Personal Data

Contact

Technische Universität Braunschweig
Universitätsplatz 2
38106 Braunschweig

P. O. Box: 38092 Braunschweig
GERMANY

Phone: +49 (0) 531 391-0

Getting here

© Technische Universität Braunschweig
Legal Notice Privacy Accessibility

TU Braunschweig uses the software Matomo for anonymised web analysis. The data serve to optimise the web offer.
You can find more information in our data protection declaration.