G. Bohnert, K. Weronek, A. Hangleiter "Transient characteristics of isoelectronic bound excitons at hole attractive defects in Silicon: C (0.79 eV), P (0.767 eV), and H (0.926 eV) line" Phys. Rev. B. 48(15), 14973 (1993).
G. Bohnert, A. Hangleiter, K. Weronek, K. Thonke "Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon" 14th International Conference on Defects in Semiconductors, Budapest 1988.
A. Dörnen and A. Hangleiter "Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon" Proc. 14th Intern. Conf. on Defects in Semiconductors, (Paris, August 1986), Material Science Volumes 10 - 12 (1986), p. 967, edited by H.J. von Bardeleben (Trans Tech, Switzerland, 1986).
H. Conzelmann, A. Hangleiter, and J. Weber "Thallium-Related Isoelectronic Bound Excitons in Silicon: A Bistable Defect at Low Temperatures" phys. stat. sol. (b) 133, 655 (1986).
K. Thonke, A. Hangleiter, J. Wagner, and R. Sauer "0.79 eV (C line) Defect in Irradiated Oxygen-rich Silicon: Excited State Structure, Internal Strain and Luminescence Decay Time" J. Phys. C: Solid State Phys. 18, L795 (1985).
