A. Hangleiter, "Recombination dynamics in GaInN/GaN quantum wells" Semicond. Sci. Technol. 34(7), 073002 (2019). P. Henning, P. Horenburg, H. Bremers, U. Rossow, and A. Hangleiter, "Reduced radiative emission for wide nonpolar III-nitride quantum wells" Phys. Rev. B 99, 205308 (2019). F.A. Ketzer, P. Horenburg, P. Henning, (...), U. Rossow, and A. Hangleiter, "Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells" Appl. Phys. Lett. 114(5), 052101 (2019). P. Horenburg, H. Bremers, R. Imlau, U. Rossow, and A. Hangleiter, "Microscopic analysis of interface composition dynamics in m-plane AlInN" Japan. J. Appl. Phys. 58(SC), SC1008 (2019). A. Hangleiter, T. Langer, P. Henning, F.A. Ketzer, H. Bremers, and U. Rossow, "Internal quantum efficiency of nitride light emitters: A critical perspective" Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (2018). A. Hangleiter, T. Langer, P. Henning, F. A. Ketzer, P. Horenburg, E. R. Korn, H. Bremers, and U. Rossow "Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells"Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040Q (February 16, 2017). U. Rossow, , P. Horenburg, F. Ketzer, H. Bremers, and A. Hangleiter "Indium incorporation into InGaN: The role of the adlayer"J. Crystal Growth 464, 112 (2017). A. Kraus, C. Hein, H. Bremers, U. Rossow, and A. Hangleiter, "Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN"J. Appl. Phys. 119, 235308 (2016). L. Caccamo, G. Cocco, G. Martín, Hao Zhou, S. Fündling, A. Gad, M. S. Mohajerani, M. Abdelfatah, S. Estradé, F. Peiró, W. Dziony, H. Bremers, A. Hangleiter, L. Mayrhofer, G. Lilienkamp, M. Moseler, W. Daum, and A. Waag "Insights into Interfacial Changes and Photoelectrochemical Stability of InxGa1-xN (0001) Photoanode Surfaces in Liquid Environments" ACS Appl. Mater. Interfaces 8, 8232 (2016). P. Horenburg, E. R. Buß, U. Rossow, H. Bremers, F. A. Ketzer, and A. Hangleiter "Strain dependence of In incorporation in m-oriented GaInN/GaN multi quantum well structures"Appl. Phys. Lett. 108, 102105 (2016). E. R. Buß, P. Horenburg,U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz, and A. Hangleiter "Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices"Phys. Status Solidi B 253, 84-92 (2016). T. Langer, M. Klisch, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, T. Meisch, F. Scholz, and A. Hangleiter "Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells"Phys. Status Solidi B 253, 133-139 (2016). A. Hangleiter, Z. Jin, M. Gerhard, D. Kalincev, T. Langer, H. Bremers, U. Rossow, M. Koch, M. Bonn, and D. Turchinovich "Efficient formation of excitons in a dense electron-hole plasma at room temperature" Phys. Rev. B 92, 241305(R) (2015). A. Hangleiter, T. Langer, M. Gerhard, D. Kalincev, A. Kruse, H. Bremers, U. Rossow, and M. Koch "Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes "Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631R (March 13, 2015). U. Rossow, L. Hoffmann, H. Bremers, E.R. Buß, F. Ketzer, T. Langer, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer "Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells"J. Crystal Growth 414, 49-55 (2015). T. Langer, H.-G. Pietscher, F. A. Ketzer, H. Jönen, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter "S shape in polar GaInN/GaN quantum wells: Piezoelectric-field-induced blue shift driven by onset of nonradiative recombination" Phys. Rev. B 90, 205302 (2014). E. R. Buß, U. Rossow, H. Bremers, T. Meisch, M. Caliebe, F. Scholz, and A. Hangleiter "Intentional anisotropic strain relaxation in (11-22) oriented Al1xInxN onedimensionally lattice matched to GaN"Appl. Phys. Lett. 105, 122109 (2014). E. R. Buß, U. Rossow, H. Bremers, and A. Hangleiter "Lattice-matched AlInN in the initial stage of growth"Appl. Phys. Lett. 104, 162104 (2014). T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer "Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast"Journal of Physics: Conference Series 471, 012009 (2013). T. Langer, A. Chernikov, D. Kalincev, M. Gerhard, H. Bremers, U. Rossow, M. Koch, and A. Hangleiter "Room temperature excitonic recombination in GaInN/GaN quantum wells"Appl. Phys. Lett. 103, 202106 (2013). T. Langer, H. Jönen, A. Kruse, H. Bremers, U. Rossow, and A. Hangleiter "Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures"Appl. Phys. Lett. 103, 022108 (2013). T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, and A. Rosenauer, "Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography"Appl. Phys. Lett. 102, 132112 (2013). T. Langer, H.-G. Pietscher, H. Bremers, U. Rossow, D. Menzel, and A. Hangleiter, "Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantation"Proceedings of SPIE - The International Society for Optical Engineering 8625 , art. no. 862522 (2013). L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A. Rosenauer, and A. Hangleiter, "Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content"Appl. Phys. Lett. 102, 102110 (2013). J.K. Mishra, T. Langer, U. Rossow, S. Shvarkov, A. Wieck, and A. Hangleiter, "Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping"Appl. Phys. Lett. 102, 061115 (2013). A. Kraus, H. Bremers, U. Rossow, and A. Hangleiter, "Double-Pulsed Growth of InN by RF-MBE"Journal of Electronic Materials 42 , 849 (2013).
U. Rossow, A. Kruse, H. Jönen, L. Hoffmann, F. Ketzer, T. Langer, R. Buss, H. Bremers, A. Hangleiter, T. Mehrtens, M. Schowalter, and A. Rosenauer "Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region" J. Crystal Growth 370, 105 (2013).
Shunfeng Li, Xue Wang, S. Fündling, M. Erenburg, J. Ledig, Jiandong Wei, H.-H. Wehmann, A. Waag, W. Bergbauer, M. Mandl, M. Strassburg, A. Trampert, U. Jahn, H. Riechert, H. Jönen, and A. Hangleiter "Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy" Appl. Phys. Lett. 101, 032103 (2012).
J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, and M. Kneissl "Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN" Proceedings of SPIE - The International Society for Optical Engineering 8262 , art. no. 826218 (2012).
H. Jönen, H. Bremers, T. Langer, U. Rossow, and A. Hangleiter "Large optical polarization anisotropy due to anisotropic in-plane strain in mplane GaInN quantum well structures grown on m-plane 6H-SiC" Appl. Phys. Lett. 100, 151905 (2012).
H. Jönen, H. Bremers, U. Rossow, T. Langer, A. Kruse, L. Hoffmann, J. Thalmair, J. Zweck, S. Schwaiger, F. Scholz, and A. Hangleiter "Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties" Semicond. Sci. Technol. 27, 024013 (2012).
E. Sakalauskas, Ö . Tuna, A. Kraus, H. Bremers, U. Rossow, C. Giesen, M. Heuken, A. Hangleiter, G. Gobsch, and R. Goldhahn "Dielectric function and bowing parameters of InGaN alloys" Phys. Status Solidi B 249, 485 (2012).
H. Kim-Chauveau, E. Frayssinet, B. Damilano, P. De Mierry, L. Bodiou, L. Nguyen, P. Vennéguès, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, and A. Wieck "Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes" J. Crystal Growth 338, 20 (2012).
J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U. T. Schwarz, M. Weyers, and M. Kneissl "Polarization dependent study of gain anisotropy in semipolar InGaN lasers" Appl. Phys. Lett. 99, 171105 (2011).
P. J. S. van Capel, D. Turchinovich, H. P. Porte, S. Lahmann, U. Rossow, A. Hangleiter, and J. I. Dijkhuis "Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells" Phys. Rev. B 84, 085317 (2011).
M. Brendel, A. Kruse, H. Jönen, L. Hoffmann, H. Bremers, U. Rossow, and A. Hangleiter "Auger recombination in GaInN/GaN quantum well laser structures" Appl. Phys. Lett. 99, 031106 (2011).
H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A.D. Dräger, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter "Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells" Appl. Phys. Lett. 99, 011901 (2011).
M. Thomsen, H. Jönen, U. Rossow, and A. Hangleiter "Effects of spontaneous polarization on GaInN/GaN quantum well structures" J. Appl. Phys. 109, 123710 (2011).
T. Langer, A. Kruse, F. A. Ketzer, A. Schwiegel, L. Hoffmann, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter "Origin of the "green gap": Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures" phys. stat. sol. (c) 8, 2170 (2011).
R. Charash, H. Kim-Chauveau, J-M. Lamy, M. Akther, P. P. Maaskant, E. Frayssinet, P. de Mierry, A. D. Dräger, J-Y. Duboz, A. Hangleiter, and B. Corbett "Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding" Appl. Phys. Lett. 98, 201112 (2011).
P. Clodius, H. Jönen, H. Bremers, U. Rossow, and A. Hangleiter "Scanning near-field luminescence microscopy of green light emitting GaInN/GaN quantum wells grown on c-plane sapphire and on c-plane bulk GaN" phys. stat. sol. (c) 8, 1556 (2011).
M. Thomsen, H. Jönen, U. Rossow, and A. Hangleiter "Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures" phys. stat. sol. (b) 248, 627 (2011).
A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, and A. Hangleiter "Growth and characterization of InGaN by RF-MBE" J. Crystal Growth 323, 72 (2011),
U. Rossow, H. Jönen, M. Brendel, A. Dräger, T. Langer, L. Hoffmann, H. Bremers, and A. Hangleiter "Growth of the active zone in nitride based long-wavelength laser structures" J. Crystal Growth 315 250 (2011).
H. Bremers, A. Schwiegel, L. Hoffmann, H. Jönen, U. Rossow, J. Thalmair, J. Zweck, and A. Hangleiter "X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures" phys. stat. sol. (b) 248, 616 (2011).
T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R. A. R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G. J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U. T. Schwarz, A. D. Dräger, A. Hangleiter, and F. Scholz "Three-dimensional GaN for semipolar light emitters"phys. stat. sol. (b) 248, 549 (2011).
H. Jönen, U. Rossow, H. Bremers, L. Hoffmann, M. Brendel, A. D. Dräger, S. Metzner, F. Bertram, J. Christen, S. Schwaiger, F. Scholz, J. Thalmair, J. Zweck, and A. Hangleiter "Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces" phys. stat. sol. (b) 248, 600 (2011).
W. Scheibenzuber, U. Schwarz, R. Veprek, B. Witzigmann, and A. Hangleiter "Optical anisotropy in semipolar (Al,In)GaN laser waveguides" phys. stat. sol. (c) 7, 1925 (2010).
T. Langer, H. Jönen, D. Fuhrmann, U. Rossow, and A. Hangleiter "Recombination of free excitons in polar and nonpolar nitride quantum wells" J. Phys.: Conf. Ser. 210, 012056 (2010).
W. G. Scheibenzuber, U. T. Schwarz, R. G. Veprek, B. Witzigmann, and A. Hangleiter "Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes" Phys. Rev. B 80, 115320 (2009).
H. Bremers, H. Jönen, L. Hoffmann, U. Rossow, and A. Hangleiter "Mechanism of thermal degradation in GaInN/GaN quantum wells" phys. stat. sol. (c) 6, S792 (2009).
A.D. Dräger, H. Jönen, H. Bremers, U. Rossow, P. Demolon, H.P.D. Schenk, J.Y. Duboz, B. Corbett, and A. Hangleiter "Towards Green Lasing: Ingredients for a Green Laser Diode Based on GaInN" phys. stat. sol. (c) 6, S594 (2009).
H.P.D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, P. Demolon, A.D. Dräger, A. Hangleiter, R. Charash, P.P. Maaskant, B. Corbett, and J.Y. Duboz "AlInN optical confinement layers for edge emitting group III-nitride laser structures" phys. stat. sol. (c) 6, S897 (2009).
D. Fuhrmann, T. Retzlaff, M. Greve, L. Hoffmann, H. Bremers, U. Rossow, and A. Hangleiter "Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxial GaN/AlGaN UV-emitting quantum wells" Phys. Rev. B 79, 073303 (2009).
H. Jönen, U. Rossow, T. Langer, A. Dräger, L. Hoffmann, H. Bremers, A. Hangleiter, F. Bertram, S. Metzner and J. Christen "Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE" Journal of Crystal Growth 310, 4987 (2008).
H. P. D. Schenk, M. Nemoz, M. Korytov, P. Vennéguès, A. D. Dräger, and A. Hangleiter "Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice mathed to GaN" Appl. Phys. Lett. 93, 081116 (2008).
A. Dräger, D. Fuhrmann, C. Netzel, U. Rossow, H. P. D. Schenk, and A. Hangleiter "Comparison of GaInN laser structures grown on different substrates" phys. stat. sol. (c) 5, No. 6, 2277-2279 (2008)
D. Fuhrmannn, H. Jönen, L. Hoffmann, H. Bremers, U. Rossow, and A. Hangleiter "High quality, high efficiency and ultrahigh In-content InGaN QWs - the problem of thermal stability"phys. stat. sol. (c) 5, No. 6, 1662-1664 (2008)
U. Rossow, D. Fuhrmann, H. Jönen, and A. Hangleiter "Investigations of deep lying wide bandgap GaN and InGaN quantum well structures: A challenge for ellipsometric methods" phys. stat. sol. (c) 5, 1378 (2008).
C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter "Emission and recombination characteristics of GaInN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits" Phys. Rev. B 76, 155322 (2007).
C. Buchheim, R. Goldhahn, A. T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, and M. Eickhoff "Stark shift of interband transitions in AlN/GaN superlattices" Appl. Phys. Lett. 90, 241906 (2007).
A. Hangleiter, C. Netzel, D. Fuhrmann, F. Hitzel, L. Hoffmann, H. Bremers, U. Rossow, G. Ade and P. Hinze "Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells"Phil. Mag. 87, 2041 (2007).
H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter "Vertically Increasing Well Thickness and In Content in GaInN MQW's due to V-shaped Pits"Mat. Res. Symp. Proc. 955, 0955-I15-39 (2007).
Martina Finke, Daniel Fuhrmann, Uwe Rossow, and Andreas Hangleiter "Experimental Analysis of the Spontaneous Polarization Field in GaN by UHV cathodoluminescence" Mat. Res. Symp. Proc. 955, 0955-I09-04 (2007).
U. Rossow, D. Fuhrmann, T. Litte, T. Retzlaff, L. Hoffmann, H. Bremers, and A. Hangleiter "Aluminum incorporation in AlxGa1-xN-layers and implications for growth optimization"J. Crystal Growth 298, 361 (2007).
A. T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, and A. Krost "Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment" Phys. Rev. B. 74, 125207 (2006).
C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, and O. Ambacher "Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy" phys. stat. sol. (c) 3, 2009 (2006).
D. Fuhrmann, U. Rossow, C. Netzel, H. Bremers, G. Ade, P. Hinze, and A. Hangleiter "Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters" phys. stat. sol. (c) 3, 1966 (2006).
D. Fuhrmann, T. Retzlaff, U. Rossow, H. Bremers, A. Hangleiter, G. Ade, and P. Hinze "Large internal quantum efficiency of In-free UV-emitting GaN/AlGaN quantum-well structures" Appl. Phys. Lett. 88, 191108 (2006).
D. Fuhrmann, C. Netzel, U. Rossow, A. Hangleiter, G. Ade, and P. Hinze "Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes" Appl. Phys. Lett. 88, 071105 (2006).
U. Rossow, R. Goldhahn , D. Fuhrmann , and A. Hangleiter "Reflectance difference spectroscopy RDS/RAS combined with spectroscopic ellipsometry for a quantitative analysis of optically anisotropic materials" phys. stat. sol. (b), 242, 2617 (2005).
C. Buchheim, R. Goldhahn, M. Rakel, C. Cobet, N. Esser, U. Rossow, D. Fuhrmann, and A. Hangleiter "Dielectric function and critical points of the band structure for AlGaN alloys" phys. stat. sol. (b) 242, 2610 (2005).
A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, and P. Hinze "Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency"Phys. Rev. Lett. 95 (12), 127402 (2005).
F. Hitzel, G. Klewer, S. Lahmann, U. Rossow, and A. Hangleiter "Localized high-energy emissions from the vicinity of defects in high-efficiency GaxIn1−xN/GaN quantum wells" Phys. Rev. B 72, 081309(R) (2005).
A. T. Winzer, R. Goldhahn, G. Gobsch, A. Link, M. Eickhoff, U. Rossow, and A. Hangleiter "Determination of the polarization discontinuity at the AlGaN/GaN interface by electroreflectance spectroscopy" Appl. Phys. Lett. 86, 181912 (2005).
C. Netzel, S. Heppel, S. Miller, M. Furitsch, A. Leber, A. Lell, V. Härle, and A. Hangleiter "Changes in excess carrier recombination dynamics caused by aging of GaN-based blue laser diodes" phys. stat. sol. (c) 2, 2708 (2005).
C. Netzel, F. Hitzel, U. Rossow, and A. Hangleiter "Specific emission characteristics of high-quantum-efficiency GaInN/GaN heterostructures" phys. stat. sol. (c) 2, 2712 (2005).
D. Fuhrmann, T. Retzlaff, U. Rossow, and A. Hangleiter "Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells" Mat. Res. Symp. Proc. 831, E5.9.1 (2005).
U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, and A. Hangleiter "Growth of AlGaN layers on planar and patterned substrates" J. Crystal Growth 272 (1-4), 506 (2004).
A. Hangleiter, D. Fuhrmann, M. Grewe, F. Hitzel, G. Klewer, S. Lahmann, C. Netzel, N. Riedel, and U. Rossow "Towards understanding the emission efficiency of nitride quantum wells" phys. stat. sol. (a) 201, No. 12, 2808-2813 (2004).
F. Hitzel, G. Klewer, S. Lahmann, U. Rossow, and A. Hangleiter "Narrow high-energy emission lines in high-resolution near-field spectroscopy on GaInN/GaN quantum wells" phys. stat. sol. (c), 1-4 (2004).
A. Hangleiter, D. Fuhrmann, M. Greve, U. Rossow "Optimization of GaN/AlGaN quantum wells for ultraviolet emitters" Mat. Res. Symp. Proc. 798, Y4.8.1 (2004).
D. Turchinovich, B.S. Monozon, M. Koch, S. Lahmann, U. Rossow, A. Hangleiter, P. U. Jepsen "Ultrafast polarization dynamics in optically excited biased quantum wells" Proc. SPIE 5354, 151 (2004).
D. Turchinovich, P. Uhd Jepsen, B. S. Monozon, M. Koch, S. Lahmann, U. Rossow, A. Hangleiter "Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation" Phys. Rev. B 68, 241307 (2003).
S. Lahmann, F. Hitzel, U. Rossow, A. Hangleiter "Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells" phys. stat. sol. (c) 0 (7), 2202 (2003).
F. Hitzel, U. Ahrend, N. Riedel, U. Rossow, A. Hangleiter "High resolution near-field spectroscopy investigation of tilted InGaN quantum wells" phys. stat. sol. (c) 0, 2674 (2003).
U. Ahrend, U. Rossow, N. Riedel, M. Greve, F. Hitzel, A. Hangleiter "Growth of AlxGa1-xN and GaN on photo-electrochemically patterned SiC substrates" phys. stat. sol. (c) 0, 2072 (2003).
C. Netzel, S. Heppel, F. Hitzel, S. Miller, A. Weimar, G. Brüderl, H. J. Lugauer, A. Lell, V. Härle, A. Hangleiter "Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes" phys. stat. sol. (c) 0, 2304 (2003).
A. Hangleiter "Optical properties of nitride heterostructures" phys. stat. sol. (c) 0, 1816 (2003).
M. Röwe, M. Vehse, P. Michler, J. Gutowski, S. Heppel, A. Hangleiter "Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures" phys. stat. sol. (c) 0, 1860 (2003).
A. Hangleiter, F. Hitzel, S. Lahmann, U. Rossow "Composition dependence of polarization fields in GaInN/GaN quantum wells" Appl. Phys. Lett. 83(6), 1169 (2003).
T. Riedl, F. Hitzel, A. Hangleiter, S. Miller, A. Weimar, G. Brüderl, A. Lell, V. Härle "Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques" Jpn. J. Appl. Phys. 42, 3381 (2003).
F. Hitzel, A. Hangleiter, S. Miller, A. Weimar, G. Brüderl, A. Lell, V. Härle "High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC" Appl. Phys. Lett. 82, 4071 (2003).
U. Rossow, N. Riedel, F. Hitzel, T. Riedl, A. Hangleiter "Lateral growth of AlGaN and GaN on SiC substrates patterned by photo-electrochemical etching" Mat. Res. Symp. Proc. 743, L1.9.1 (2003).
A. Hangleiter "III-V-Nitrides: A New Age for optoelectronics" MRS Bulletin 28, 350 (2003).
U. Rossow, F. Hitzel, N. Riedel, S. Lahmann, J. Bläsing, A. Krost, G. Ade, P. Hinze, A. Hangleiter "Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers" J. Crystal Growth 248, 528 (2003).
D. Turchinovich, M. Walther, H. Helm, M. Koch, S. Lahmann, A. Hangleiter, P.U. Jepsen "Terahertz pulse emission from strained GaN/GaInN quantum well structures" THz 2002. 2002 IEEE Tenth International Conference on Terahertz Electronics Proceedings ed. by J.M. Chamberlain et al. (Piscataway, NJ, USA: IEEE, 2002) p. 63-6.
C. Netzel, R. Doloca, S. Lahmann, U. Rossow, A. Hangleiter "Radiative and nonradiative recombination times in optically excited GaInN/GaN quantum wells" phys. stat. sol. (c) 0, 324 (2002).
F. Hitzel, A. Hangleiter, S. Bader, H.-J. Lugauer, V. Härle "Correlation of defects and local bandgap variations in GaInN/GaN/AlGaN LEDs" phys. stat. sol. (b) 228, 407 (2002).
A. Hangleiter "Optical gain in wide-bandgap group-III nitrides'' in Gallium-Nitride-Based Technologies, edited by M. Osinski, Proceedings of SPIE CR83, 165 (2002).
A. Hangleiter, S. Lahmann, C. Netzel, U. Rossow, P. R. C. Kent, A. Zunger ``Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells'' Mat. Res. Soc. Symp. Proc. 693, I7.2 (2002).
S. Heppel, A. Hangleiter, S. Bader, G. Brüderl, A. Weimar, V. Kümmler, A. Lell, V. Härle, J. Off, B. Kuhn, F. Scholz ``Systematics of Optical Gain in GaInN/GaN Laser Structures'' phys. stat. sol. (a) 188, 59 (2001).
F. Hitzel, A. Hangleiter, S. Bader, H.-J. Lugauer, V. Härle ``Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs'' phys. stat. sol. (b) 228, 407 (2001).
A. Hangleiter, S. Heppel, J. Off, B. Kuhn, F. Scholz, S. Bader, B. Hahn, V. Härle ``Analysis of the threshold current in nitride-based lasers'' J. Crystal Growth 230, 522 (2000).
S. Bader, B Hahn, H.-J. Lugauer, A. Lell, A. Weimar, G. Brüderl, J. Baur, D. Eisert, M. Scheubeck, S. Heppel, A. Hangleiter, V. Härle ``First European GaN-based violet laser diode'' phys. stat. sol. (a) 180, 177 (2000).
A. Hangleiter ``Internal electric fields in nitride-based heterostructures'' in Physics and Simulation of Optoelectronic Devices VIII, edited by R.H. Binder, P. Blood, M. Osinski, Proceedings of SPIE 3944, 58 (2000).
J. S. Im, A. Hangleiter, J. Off, and F. Scholz ``Sign of the piezoelectric field in asymmetric GaInN/AlGaN/GaN single and double quantum wells on SiC'' in GaN and Related Alloys, Mat. Res. Soc. Symp. Proc. Vol. 595, ed. by T. H. Myers, R. M. Feenstra, M. S. Shur, and H. Amano, p. W11.28.1, Warrendale, PA, 2000.
A. Hangleiter ``Optical properties and polarization fields in the nitrides'' J. Lumin. 87-89, 130 (2000).
A. Hangleiter, J. S. Im, J. Off, F. Scholz ``Optical properties of nitride quantum wells: How to separate fluctuations and polarization field effects'' phys. stat. sol. (b) 216, 427 (1999).
S. Heppel, R. Wirth, J. Off, F. Scholz, A. Hangleiter, H. Obloh, J. Wagner, C. Kirchner, M. Kamp ``Mode conversion in GaN-based laser structures on sapphire due to the birefringence of the nitrides'' phys. stat. sol. (a) 176, 73 (1999).
O. Gfrörer, C. Gemmer, J. Off, J. S. Im, F. Scholz, A. Hangleiter ``Direct observation of pyroelectric fields in InGaN/GaN and GaN/AlGaN heterostructures'' phys. stat. sol. (b) 216, 405 (1999).
S. Heppel, R. Wirth, J. S. Im, J. Off, F. Scholz, A. Hangleiter ``Optical gain and waveguiding in GaN-based quantum well lasers'' in Physics and Simulation of Optoelectronic Devices VII, edited by P. Blood, A. Ishibashi, M. Osinski, Proceedings of SPIE 3625, 32 (1999).
J. S. Im, H. Kollmer, O. Gfrörer, J. Off, F. Scholz, A. Hangleiter ``Piezoelectric field effect on optical properties of GaN/GaInN/AlGaN quantum wells'' MRS Internet J. Nitride Semicond. Res. 4S1, G6.20 (1999).
H. Kollmer, J. S. Im, S. Heppel, J. Off, F. Scholz, A. Hangleiter ``Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields'' Appl. Phys. Lett. 74, 82 (1999).
S. Heppel, J. Off, F. Scholz, A. Hangleiter ``Complex spectral behaviour of the waveguide modes in GaInN/GaN laser structures in Technical Digest of the 16th IEEE International Semiconductor Laser Conference, Nara 1998, p. 11.
Jin Seo Im, H. Kollmer, S. Heppel, J. Off, F. Scholz, A. Hangleiter ``Piezoelectric fields and optical transitions in GaInN/GaN multiple quantum wells'' in Proceedings of the 2nd International Symposium on Blue Laser and Light Emitting Diodes, Chiba 1998 (Ohmsha, Tokyo, 1998), p. 673.
A. Hangleiter ``Physics of GaN-based LED's and lasers'' in Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, Hiroshima 1998, p. 362.
A. Hangleiter, J.S. Im, H. Kollmer, S. Heppel, J. Off, F. Scholz ``The role of piezoelectric fields in GaN-based quantum wells'' invited paper at 3rd European GaN workshop, Warsaw 1998, MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).
J.S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, A. Hangleiter ``Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field'' E-MRS Spring Meeting 1998, Symposium L: Nitrides and related wide band gap materials, Mat. Sci. Eng. B. 59B, 315 (1999).
J.S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, A. Hangleiter ``Reduction of oscillator strength due to piezoelectric fields in GaN/AlGaN quantum wells'' Phys. Rev. B 57, 9435 (1998).
J.S. Im, A. Sohmer, F. Scholz, A. Hangleiter ``Effects of piezoelectric fields in GaInN/GaN heterostructures and quantum wells'' Fall Meeting of the Materials Research Society, Symposium D: Nitride Semiconductors, Boston 1997
J.S. Im, S. Heppel, H. Kollmer, A. Sohmer, J. Off, F. Scholz, A. Hangleiter ``Evidence for quantum-dot-like states in GaInN/GaN quantum wells?'' J. Crystal Growth 189-190(1-4), 597-600 (1998).
J.S. Im, J. Off, A. Sohmer, F. Scholz, A. Hangleiter ``Time-resolved spectroscopy on GaN/AlGaN double heterostructures and quantum wells'' Proceedings of the International conference on silicon carbide and III-Nitrides, Stockholm 1997.
A. Hangleiter, S. Heppel, J. Off, A. Sohmer, F. Scholz ``Optical absorption and excitation spectroscopy on GaInN/GaN double heterostructures and quantum wells'' Proceedings of the International conference on silicon carbide and III-Nitrides, Stockholm 1997.
F. Scholz, A. Sohmer, J. Off, J.S. Im, A. Hangleiter ``Low pressure MOVPE of GaN and GaInN/GaN heterostructures and quantum wells'' European workshop on metalorganic vapor phase epitaxy, 1997.
A. Hangleiter, G. Frankowsky, F. Steuber, A. Sohmer, J. Off, F. Scholz ``Optical gain studies of GaN-based laser structures'' invited paper, Second European GaN workshop, Valbonne (France), June 1997.
A. Sohmer, J. Off, H. Bolay, V. Härle, V. Syganow, Jin Seo Im, V. Wagner, F. Adler, A. Hangleiter, A. Dörnen, F. Scholz ``GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy MRS Internet J. Nitride Semicond. Res. 2, 14(1997).
F. Scholz, A. Sohmer, J. Off, V. Syganow, A. Dörnen, J.-S. Im, A. Hangleiter, H. Lakner ``In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN heterostructures and quantum wells'' Mat. Sci. Eng. B50, 238 (1997).
O. Gfrörer, J. Off, A. Sohmer, F. Scholz, A. Hangleiter ``Investigations of selectively grown GaN/InGaN epitaxial layers'' Mat. Sci. Eng. B50, 268 (1997).
F. Scholz, V. Härle, H. Bolay, F. Steuber, B. Kaufmann, G. Reyher, A. Dörnen, O. Gfrrer, J. S. Im, A. Hangleiter ``Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures'' Solid State Electron. 41, 141 (1997).
J. S. Im, A. Moritz, F. Steuber, V. Härle, F. Scholz, A. Hangleiter ``Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN'' Appl. Phys. Lett. 70, 631 (1997).
O. Gfrörer, T. Schlüsener, V. Härle, F. Scholz, A. Hangleiter ``Mechanisms of strain reduction in GaN and AlGaN/GaN epitaxial layers'' Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, 1996.
F. Scholz, V. Härle, F. Steuber, A. Sohmer, H. Bolay, A. Dörnen, V. Syganow, A. Hangleiter ``Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells'' Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, 1996.
A. Hangleiter, G. Frankowsky, J.S. Im, V. Härle, F. Scholz ``Spontaneous and stimulated recombination in the nitrides'' invited for Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, 1996.
A. Hangleiter, G. Frankowsky, V. Härle, F. Steuber, F. Scholz ``Experimental analysis of room-temperature optical gain in GaInN/GaN and GaN/AlGaN double heterostructures and quantum wells'' 15th International Semiconductor Laser Conference, Haifa, October 1996.
G. Frankowsky, V. Härle, F. Scholz, A. Hangleiter ``Optical gain in GaInN/GaN heterostructures and quantum wells'' Proceedings of the 23rd International Conference on the Physics of Semiconductors (Berlin, July 1996), edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 1867.
F. Scholz, V. Härle, F. Steuber, H. Bolay, A. Hangleiter ``Low pressure MOVPE of GaN and GaInN/GaN heterostructures'' International conference on metal-organic vapour phase epitaxy, Cardiff, June 1996
O. Gfrörer, T. Schlsener, V. Härle, F. Scholz, A. Hangleiter ``Relaxation of thermal strain in GaN epitaxial layers grown on sapphire'' Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, EMRS Spring Meeting, Strassbourg, June 1996; Mat. Sci. Eng. B43, 250 (1997).
A. Hangleiter, G. Frankowsky, V. Härle, F. Scholz ``Optical gain spectroscopy on the nitrides: Are there differences to other III-V semiconductors?'' Invited paper, Symposium C: UV, Blue and Green Light Emission from Semiconductor Materials, EMRS Spring Meeting, Strassbourg, June 1996; Mat. Sci. Eng. B43, 201 (1997).
J.S. Im, V. Härle, F. Scholz, A. Hangleiter ``Radiative lifetime of excitons in GaInN/GaN quantum wells'' MRS Internet J. Nitride Semicond. Res. 1, 37 (1996).
G. Frankowsky, F. Steuber, V. Härle, F. Scholz, A. Hangleiter ``Optical gain in GaInN/GaN heterostructures'' Appl. Phys. Lett. 68, 3746 (1996).
V. Härle, H. Bolay, F. Steuber, F. Scholz, G. Frankowsky, A. Hangleiter ``Optimization of GaInN/GaN heterostructures grown by low-pressure MOVPE'' in International Symposium on Blue Lasers and Light Emitting Diodes, Chiba, Japan, 1996.
A. Hangleiter, T. Forner, Jin-Seo Im, V. Hrle, F. Scholz ``Near-bandgap photoluminescence decay time in GaN epitaxial layers grown on sapphire'' in Gallium Nitride and Related Materials, Fall Meeting of the Materials Research Society, Boston, 1995.