Eine Liste aller Veröffentlichungen der Professoren/Professorinnen kann über diese Links abgerufen werden:
Prof. Andreas Waag: ORCID, Scopus, Google Scholar
Prof. Tobias Voss: ORCID, Scopus, Google Scholar
Prof. Stefanie Kroker: ORCID, Scopus, Google Scholar
Prof. Andrey Bakin: ORCID, Scopus, Google Scholar
Prof. Erwin Peiner: ORCID, Scopus, Google Scholar
Folgende Artikel wurden in den letzten Jahren (2018 bis heute) veröffentlicht:
Parasitic AlxOyNz surface defects on high-temperature annealed AlN and their role in hillock formation, L. Peters, T. Meyer, C. Margenfeld, H. Spende, A. Waag, Appl. Phys. Lett. 123, 112104 (2023)
Sublimation behavior of AlN in nitrogen and argon at conditions used for high-temperature annealing, L. Peters, D. Sergeev, C. Margenfeld, M. Müller, A. Waag, Journal of Applied Physics 133, 235704 (2023)
Levitating the noise performance of ultra-stable laser cavities assisted by a deep neural network: the non-intuitive role of the mirrors, J. Dickmann, L. Shelling Neto, M. Gaedtke, and S. Kroker, Optics Express 31 2023, 10, 15953-15965
A Combination of Ion Implantation and High-Temperature Annealing: Donor–Acceptor Pairs in Carbon-Implanted AlN, Peters, L., Spende, H., Wolter, S., Margenfeld, C., Ronning, C., Voss, T., Waag, A., Phys. Status Solidi A 2023, 2200809
Experimental realization of a 12,000-finesse laser cavity based on a low-noise microstructured mirror, Dickmann, J., Sauer, S., Meyer, J., Gaedtke, M., Siefke, T., Brückner, U., Plentz, J., Kroker, S., Commun Phys 6, 16 2023
Assessment of sub-sampling schemes for compressive nano-FTIR imaging . S. Metzner, B. Kästner, M. Marschall, G. Wübbeler, S. Wundrack, A. Bakin, A. Hoehl, E. Rühl and C. Elster. IEEE Transactions on Instrumentation and Measurement , 2022, Vol. 71, DOI: 10.1109/TIM.2022.3204072
Facet Control and Material Redistribution in GaN Growth on Three-Dimensional Structures, I. Manglano Clavero, C. Margenfeld, J. Hartmann, A. Waag, Crystal Growth & Design 2022
A Combination of Ion Implantation and High-Temperature Annealing: The Origin of the 265 nm Absorption in AlN, L. Peters, C. Margenfeld, J. Krügener, C. Ronning, A. Waag, Physica Status Solidi (A) 2022
AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence, H. Spende, C. Margenfeld, A. Waag, ACS Photonics 2022
Gradients in Three-Dimensional Core−Shell GaN/InGaN Structures: Optimization and Physical Limitations, I. Manglano Clavero, C. Margenfeld, J. Quatuor, H. Spende, L. Peters, U. T. Schwarz, A. Waag, ACS Appl. Mater. Interfaces 2022
Synthesis of a Recoverable CuS/Fe3O4 Composite Structure with Enhanced Oxidase-Like Activity for Detection of Chromium (VI), Feke K., Alula M.T., Spende H., Waag A., Lemmens P., 2022 Journal of Cluster Science
10.1007/s10876-022-02284-9
Visible-Light-Driven Room Temperature NO2 Gas Sensor Based on Localized Surface Plasmon Resonance: The Case of Gold Nanoparticle Decorated Zinc Oxide Nanorods (ZnO NRs), Qomaruddin, Casals O., Wasisto H.S., Waag A., Prades J.D., Fàbrega C., 2022 Chemosensors 610.3390/chemosensors10010028
Thermally induced refractive index fluctuations in transmissive optical components and their influence on the sensitivity of Einstein telescope, J. Meyer, W. Dickmann, S. Kroker, M. Gaedtke, J. Dickmann, Classical and Quantum Gravity 39, 135001 (2022)
Deep learning assisted design of high reflectivity metamirrors, L. Shelling Neto, J. Dickmann, S. Kroker, Optics Express 30, 986-994 (2022)
Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions . S. Wundrack, D. M. Pakdehi, W. Dempwolf, N. Schmidt, K. Pierz, L. Michaliszyn, H. Spende, A. Schmidt, H. W. Schumacher, R. Stosch, A. Bakin. APS Physical Review Materials, 2021, https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.5.024006
Thermal noise computation of arbitrary masses in optical interferometers from first principles, J. Dickmann, Optics Express 29, 36546-36558 (2021)
Impact of Earth’s gravity on Gaussian beam propagation in hemispherical cavities, S. Ulbricht, J. Dickmann, R. A. Müller, S. Kroker, A. Surzhykov, Physical Review D 104, 062002 (2021)
Processing and Characterization of Monolithic Passive-Matrix GaN-Based MicroLED Arrays With Pixel Sizes From 5 to 50 µm, S. Bornemann, J. Gülink, V. Moro, J. Canals Gil, S. Wolter, G. Schöttler, D. Bezshlyakh, J. D. Prades, A. Dieguez, A. Waag, IEEE Photonics Journal 2021, 13 (5) pp. 1-9, 2021
Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale, S. Wolter, H. Spende, J. Gülink, J. Hartmann, H.-H. Wehmann, A. Waag, A. Lex, A. Avramescu, H.-J. Lugauer, N. von Malm, J.-J. Drolet, M. Strassburg, Nanomaterials 2021, 11(4), 836
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel, K. Strempel, F. Römer, F. Yu, M. Meneghini, A. Bakin, H.-H. Wehmann, B. Witzigmann, A. Waag, Semicond. Sci. Technol. 36 2021, 014002
Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique, Yulianto N., Refino A.D., Syring A., Majid N., Mariana S., Schnell P., Wahyuono R.A., Triyana K., Meierhofer F., Daum W., Abdi F.F., Voss T., Wasisto H.S., Waag A., Microsystems and Nanoengineering 2021, 1310.1038/s41378-021-00257-y
Nonmechanical parfocal and autofocus features based on wave propagation distribution in lensfree holographic microscopy, Dharmawan A.B., Mariana S., Scholz G., Hörmann P., Schulze T., Triyana K., Garcés-Schröder M., Rustenbeck I., Hiller K., Wasisto H.S., Waag A., Scientific Reports 2021, 210.1038/s41598-021-81098-7
Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures, Jungclaus J., Spende H., Hille P., Schörmann J., Waag A., Eickhoff M., Voss T., Nano Express 2021, 310.1088/2632-959X/ac0598
Individually switchable ingan/gan nano-led arrays as highly resolved illumination engines, Kluczyk-Korch K., Moreno S., Canals J., Diéguez A., Gülink J., Hartmann J., Waag A., Di Carlo A., der Maur M.A., Electronics (Switzerland) 2021, 610.3390/electronics10151829
Pursuing the diffraction limit with nano-led scanning transmission optical microscopy, Moreno S., Canals J., Moro V., Franch N., Vilà A., Romano-Rodriguez A., Prades J.D., Bezshlyakh D.D., Waag A., Kluczyk-Korch K., der Maur M.A., Di Carlo A., Krieger S., Geleff S., Diéguez A., Sensors 2021, 310.3390/s21103305
Magnetic field dependence of the in-plane hole g factor in ZnSe- And CdTe-based quantum wells, Zhukov E.A., Mantsevich V.N., Yakovlev D.R., Krivenko I.S., Nedelea V.V., Kowski D., Waag A., Karczewski G., Wojtowicz T., Bayer M., Physical Review B 2021, 110.1103/PhysRevB.103.125305
A Compact Calibratable Pulse Oximeter Based on Color Filters: Towards a Quantitative Analysis of Measurement Uncertainty, Wu W., Stapelfeldt F.-N., Kroker S., Wasisto H.S., Waag A., IEEE Sensors Journal 2021, 310.1109/JSEN.2020.3048118
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips, Yulianto N., Kadja G.T.M., Bornemann S., Gahlawat S., Majid N., Triyana K., Abdi F.F., Wasisto H.S., Waag A., ACS Applied Electronic Materials 2021, 2310.1021/acsaelm.0c00913
AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence, Spende H., Margenfeld C., Waag A., ACS Photonics 2021, 10.1021/acsphotonics.1c01794
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs, Bordignon T., Fregolent M., De Santi C., Strempel K., Bakin A., Waag A., Meneghesso G., Zanoni E., Meneghini M., IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings, 10.1109/WiPDA49284.2021.9645108
A novel approach for a chip-sized scanning optical microscope, Canals J., Franch N., Moro V., Moreno S., Prades J.D., Romano-Rodríguez A., Bornemann S., Bezshlyakh D.D., Waag A., Vogelbacher F., Schrittwieser S., Kluczyk-Korch K., der Maur M.A., Di Carlo A., Diéguez A., Micromachines 2021, 110.3390/mi12050527
A nano-illumination microscope with 7 mm2 extended field-of-view and resolution below 1 µm, Moreno S., Canals J., Moro V., Franch N., Vilà A., Romano A., Prades J.D., Bezshlyakh D.D., Waag A., Krieger S., Geleff S., Diéguez A., Progress in Biomedical Optics and Imaging - Proceedings of SPIE 2021, 10.1117/12.2578225
Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range, H. Spende, C. Margenfeld, T. Meyer, I. Manglano Clavero, H. Bremers, A. Hangleiter, M. Seibt, A. Waag, A. Bakin, Semicond. Sci. Technol. 35 2020, 035006
Quasi-bound states in the continuum for deep subwavelength structural information retrieval for DUV nano-optical polarizers, T. Siefke, C. B. R. Hurtado, J. Dickmann, W. Dickmann, T. Käseberg, J. Meyer, S. Burger, U. Zeitner, B. Bodermann, S. Kroker, Optics Express 28, 23122-23132 (2020)
Thermal charge carrier driven noise in transmissive semiconductor optics, F. Bruns, S. Vyatchanin, R. Glaser, D. Heinert, R. Nawrodt, S. Kroker, Physical Review D 102, 022006 (2020)
Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization, Bezshlyakh D.D., Spende H., Weimann T., Hinze P., Bornemann S., Gülink J., Canals J., Prades J.D., Dieguez A., Waag A., Microsystems and Nanoengineering 2020, 10.1038/s41378-020-00198-y
Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures, Krieg L., Meierhofer F., Gorny S., Leis S., Splith D., Zhang Z., von Wenckstern H., Grundmann M., Wang X., Hartmann J., Margenfeld C., Manglano Clavero I., Avramescu A., Schimpke T., Scholz D., Lugauer H.-J., Strassburg M., Jungclaus J., Bornemann S., Spende H., Waag A., Gleason K.K., Voss T., Nature Communications 2020, 10.1038/s41467-020-18914-7
Point Defect-Induced UV-C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal-Organic Chemical Vapor Deposition, Tillner N., Frankerl C., Nippert F., Davies M.J., Brandl C., Lösing R., Mandl M., Lugauer H.-J., Zeisel R., Hoffmann A., Waag A., Hoffmann M.P., Physica Status Solidi (B) 2020, 10.1002/pssb.202000278
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator, Ruzzarin M., De Santi C., Yu F., Fatahilah M.F., Strempel K., Wasisto H.S., Waag A., Meneghesso G., Zanoni E., Meneghini M., Applied Physics Letters 2020, 10.1063/5.0027922
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel, Strempel K., Römer F., Yu F., Meneghini M., Bakin A., Wehmann H.-H., Witzigmann B., Waag A., Semiconductor Science and Technology 2020, 10.1088/1361-6641/abc5ff
Bound states in the continuum for optomechanical light control with dielectric metasurfaces, C. B. R. Hurtado, J. Dickmann, F. F. Bruns, T. Siefke, S. Kroker, Optics Express 28, 20106-20116 (2020)
Gravitational light deflection in Earth-based laser cavity experiments, Sebastian Ulbricht, Johannes Dickmann, Robert A Müller, Stefanie Kroker, Andrey Surzhykov, Physical Review D 101, 121501 (2020)
Nano illumination microscopy: A technique based on scanning with an array of individually addressable nanoLEDs, Franch N., Canals J., Moro V., Vilá A., Romano-Rodríguez A., Prades J.D., Gülink J., Gülink J., Bezshlyakh D., Bezshlyakh D., Waag A., Waag A., Kluczyk-Korch K., Maur M.A.D., Di Carlo A., Diéguez Á., Optics Express 2020, 10.1364/OE.391497
Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping, Vivas M.G., Manoel D.S., Dipold J., Martins R.J., Fonseca R.D., Manglano-Clavero I., Margenfeld C., Waag A., Voss T., Mendonca C.R., Journal of Alloys and Compounds 2020, 10.1016/j.jallcom.2020.153828
Visible light-driven p-type semiconductor gas sensors based on CaFe2O4 nanoparticles, Qomaruddin, Casals O., Šutka A., Granz T., Waag A., Wasisto H.S., Prades J.D., Fàbrega C., Sensors 2020 (Switzerland), 10.3390/s20030850
Instrumentation for nano-illumination microscopy based on InGaN/GaN NanoLED arrays, Canals J., Moreno S., Moro V., Franch N., Vilà A., Romano A., Prades J.D., Kluczyk-Korch K., der Maur M.A., Di Carlo A., Gülink J., Bezshlyakh D.D., Waag A., Diéguez A., Optics Info Base Conference Papers 2020
A shadow image microscope based on an array of nanoLEDs, Canals J., Moro V., Franch N., Moreno S., Alonso O., Vilà A., Prades J.D., Gülink J., Bezshlyakh D.D., Waag A., Diéguez A., Proceedings of SPIE - The International Society for Optical Engineering 2020, 10.1117/12.2559394
Optical design of InGaN/GaN nanoLED arrays on a chip: Toward: highly resolved illumination, Kluczyk-Korch K., Palazzo D., Waag A., Diéguez A., Prades J.D., Di Carlo A., Der Maur M.A., Nanotechnology 2020, 10.1088/1361-6528/abcd60
Femtosecond Laser Lift-Off with Sub-Bandgap Excitation for Production of Free-Standing GaN Light-Emitting Diode Chips, S. Bornemann, N. Yulianto, H. Spende, Y. Herbani, J. D. Prades, H. S. Wasisto, A. Waag, Adv. Eng. Mater. 2019, 1901192
Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy. S Wundrack, DM Pakdehi, P Schädlich, F Speck, K Pierz, T Seyller, H. W. Schumacher, A. Bakin, R. Stosch. 2019, Physical Review B 99 (4), 045443
Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC. D Momeni Pakdehi, K Pierz, S Wundrack, J Aprojanz, TTN Nguyen, T. Dziomba, F. Hohls, A. Bakin, R. Stosch,C. Tegenkamp, F. J. Ahlers, H. W. Schumacher. 2019, ACS Applied Nano Materials 2 (2), 844-852
3D GaN Fins as a Versatile Platform for a-Plane-Based Devices, J. Hartmann, I. Manglano Clavero, L. Nicolai, C. Margenfeld, H. Spende, J. Ledig, H. Zhou, F. Steib, A. Jaros, A. Avramescu, M. Strassburg, A. Trampert, H.-H. Wehmann, H.-J. Lugauer, T. Voss, A. Waag, Phys. Status Solidi B, 256, 1800477, 2019
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs, Wasisto H.S., Prades J.D., Gülink J., Waag A., Applied Physics Reviews 2019, 10.1063/1.5096322
Nano-structured transmissive spectral filter matrix based on guided-mode resonances, Wu W., Weber L., Hinze P., Weimann T., Dziomba T., Bodermann B., Kroker S., Prades J.D., Wasisto H.S., Waag A., Journal of the European Optical Society 2019, 10.1186/s41476-019-0115-2
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics, Fatahilah M.F., Yu F., Strempel K., Römer F., Maradan D., Meneghini M., Bakin A., Hohls F., Schumacher H.W., Witzigmann B., Waag A., Wasisto H.S., Scientific Reports 2019, 10.1038/s41598-019-46186-9
Design and fabrication of AlN-on-Si chirped surface acoustic wave resonators for label-free cell detection, Syamsu I., Granz T., Scholz G., Mariana S., Yulianto N., Daul L., Koenders L., Triyana K., Daniel Prades J., Peiner E., Waag A., Wasisto H.S., Journal of Physics: Conference Series 2019, 10.1088/1742-6596/1319/1/012011
Thermoelectric Generators Fabricated from Large-Scale-Produced Zr-/Hf-Based Half-Heusler Compounds Using Ag Sinter Bonding, Zillmann D., Metz D., Matheis B., Dietzel A., Waag A., Peiner E., Journal of Electronic Materials 2019, 10.1007/s11664-019-07366-5
Incubation effect during laser micromachining of GaN films with femtosecond pulses, Almeida G.F.B., Nolasco L.K., Barbosa G.R., Schneider A., Jaros A., Manglano Clavero I., Margenfeld C., Waag A., Voss T., Mendonça C.R., Journal of Materials Science: Materials in Electronics 2019, 10.1007/s10854-019-01373-2
Vertical GaN Nanowires and Nanoscale Light-Emitting-Diode Arrays for Lighting and Sensing Applications, Mariana S., Gülink J., Hamdana G., Yu F., Strempel K., Spende H., Yulianto N., Granz T., Prades J.D., Peiner E., Wasisto H.S., Waag A., ACS Applied Nano Materials 2019, 10.1021/acsanm.9b00587
3D GaN nanoarchitecture for field-effect transistors, Fatahilah M.F., Strempel K., Yu F., Vodapally S., Waag A., Wasisto H.S., Micro and Nano Engineering 2019, 10.1016/j.mne.2019.04.001
Continuous live-cell culture imaging and single-cell tracking by computational lensfree LED microscopy, Scholz G., Mariana S., Dharmawan A.B., Syamsu I., Hörmann P., Reuse C., Hartmann J., Hiller K., Prades J.D., Wasisto H.S., Waag A., Sensors (Switzerland) 2019, 10.3390/s19051234
Micro light plates for low-power photoactivated (gas) sensors, Markiewicz N., Casals O., Fabrega C., Gràcia I., Cané C., Wasisto H.S., Waag A., Prades J.D., Applied Physics Letters 2019, 10.1063/1.5078497
Fabrication of SiO2 microcantilever arrays for mechanical loss measurements, Mariana S., Hamdana G., Dickmann J., Bertke M., Michel C., Meyer J., Yulianto N., Cagnoli G., Peiner E., Waag A., Granata M., Kroker S., Wasisto H.S., Materials Research Express 2019, 10.1088/2053-1591/aafab7
A morphology study on the epitaxial growth of graphene and its buffer layer. M Kruskopf, K Pierz, DM Pakdehi, S Wundrack, R Stosch, A Bakin, H. W. Schumacher. 2018, Thin Solid Films 659, 7-15
Defect generation by nitrogen during pulsed sputter deposition of Ga, F. Steib, T. Remmele, J. Gülink, S. Fündling, A. Behres, H.-H. Wehmann, M. Albrecht, M. Straßburg, H.-J. Lugauer, A. Waag, Journal of Applied Physics 124, 175701, 2018
Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods, Schmidt G., Müller M., Veit P., Metzner S., Bertram F., Hartmann J., Zhou H., Wehmann H.-H., Waag A., Christen J., Scientific Reports 2018, 10.1038/s41598-018-34382-y
Thermal performance analysis of GaN nanowire and fin-shaped power transistors based on self-consistent electrothermal simulations, Kamrani H., Yu F., Frank K., Strempel K., Fatahilah M.F., Wasisto H.S., Römer F., Waag A., Witzigmann B., Microelectronics Reliability 2018, 10.1016/j.microrel.2018.10.007
Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold, Jaros A., Hartmann J., Zhou H., Szafranski B., Strassburg M., Avramescu A., Waag A., Voss T., Scientific Reports 2018, 10.1038/s41598-018-29981-8
Traceable Nanomechanical Metrology of GaN Micropillar Array, Fatahilah M.F., Puranto P., Yu F., Langfahl-Klabes J., Felgner A., Li Z., Xu M., Pohlenz F., Strempel K., Peiner E., Brand U., Waag A., Wasisto H.S., Advanced Engineering Materials 2018, 10.1002/adem.201800353
Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures, Debus J., Kudlacik D., Sapega V.F., Shamirzaev T.S., Yakovlev D.R., Reuter D., Wieck A.D., Waag A., Bayer M., Physics of the Solid State 2018, 10.1134/S1063783418080036
Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy, Janicki Ł., Mohajerani M.S., Hartmann J., Zdanowicz E., Wehmann H.-H., Waag A.,Kudrawiec R., Applied Physics Letters 2018, 10.1063/1.5040941
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption, Martins R.J., Siqueira J.P., Manglano Clavero I., Margenfeld C., Fündling S., Vogt A., Waag A., Voss T., Mendonca C.R., Journal of Applied Physics 2018, 10.1063/1.5027395
Normally off Vertical 3-D GaN Nanowire MOSFETs with Inverted p-GaN Channel, Yu F., Strempel K., Fatahilah M.F., Zhou H., Romer F., Bakin A., Witzigmann B., Schumacher H.W., Wasisto H.S., Waag A., IEEE Transactions on Electron Devices 2018, 10.1109/TED.2018.2824985
Performance analysis and simulation of vertical gallium nitride nanowire transistors, Witzigmann B., Yu F., Frank K., Strempel K., Fatahilah M.F., Schumacher H.W., Wasisto H.S., Römer F., Waag A., Solid-State Electronics 2018, 10.1016/j.sse.2018.03.005
Thermoelectric and Structural Properties of Zr-/Hf-Based Half-Heusler Compounds Produced at a Large Scale, Zillmann D., Waag A., Peiner E., Feyand M.-H., Wolyniec A., Journal of Electronic Materials 2018, 10.1007/s11664-017-5917-7
Enhancement of the Sub-Band-Gap Photoconductivity in ZnO Nanowires through Surface Functionalization with Carbon Nanodots, Cammi D., Zimmermann K., Gorny R., Vogt A., Dissinger F., Gad A., Markiewcz N., Waag A., Prades J.D., Ronning C., Waldvogel S.R., Voss T., Journal of Physical Chemistry C 2018, 10.1021/acs.jpcc.7b10288