Latest Publication about AlON surface defects

Together with colleagues from Georg-August-Universität Göttingen we were able to identify the cause and growth mechanism of so-called hillock-defects that occur during homoepitaxial growth of AlN on HTA-AlN templates. A detailed AFM and TEM study allowed to ascribe these defects to parasitic AlON surface defects that emerge during HTA.

Luckily, a suitable pretreatment leads to clean surfaces without hillock-defects after MOVPE AlN regrowth.

Check the publication under:

https://pubs.aip.org/aip/apl/article/123/11/112104/2910537/Parasitic-AlxOyNz-surface-defects-on-high