Emerging Memory Technologies

At a glance

• Type: Lecture (2420000002) with exercises (2420000003)
• Cycle: every winter semester
• Scope: 2 contact hours lecture and 1 contact hour exercises per week
• Language: English
• Programmes: Master Electrical Engineering, Master Microelectronics Engineering (elective), others on request
• Lecturer: Prof. Dr. Thomas Kämpfe
• Registration and materials: Stud.IP

Contents

• Introduction: memory hierarchy, requirements for embedded and stand-alone memories, figures of merit
• Established technologies as reference: SRAM, DRAM and Flash (SSD)
• Phase-change memory (PCM): materials, switching mechanism, cell concepts
• Resistive memories: conductive-bridging RAM (CBRAM) and oxide RRAM (OxRAM)
• Magnetic memories: spin-transfer-torque and spin-orbit-torque MRAM
• Ferroelectric memories: FRAM and ferroelectric field-effect transistors (FeFET)
• Assessment of potential, strengths and limits of the technologies, applications in memory and computing architectures

Learning outcomes

After completing the module, students are able to optimise and further develop the memory concepts and to devise new memory concepts based on physical effects. They can judge the application areas and limits of the memory technologies covered. Students can communicate in technical English. Through discussion and critical thinking they acquire the skills to assess the strengths and limitations of new technologies.

Literature

• T. Schenk et al., Memory technology, a primer for material scientists. Reports on Progress in Physics 83, 086501 (2020)
• W. Zhang et al., Designing crystallization in phase-change materials for universal memory and neuro-inspired computing. Nature Reviews Materials 4, 150 (2019)
• D. Lencer et al., Design Rules for Phase-Change Materials in Data Storage Applications. Advanced Materials 23, 2030 (2011)
• S. W. Fong et al., Phase-Change Memory, Towards a Storage-Class Memory. IEEE Transactions on Electron Devices 64, 4374 (2017)
• S. Yuasa et al., Materials for spin-transfer-torque magnetoresistive random-access memory. MRS Bulletin 43, 352 (2018)
• S. Ikegawa et al., Magnetoresistive Random Access Memory: Present and Future. IEEE Transactions on Electron Devices 67, 1407 (2020)
• H.-S. P. Wong et al., Metal-Oxide RRAM. Proceedings of the IEEE 100, 1951 (2012)
• M. N. Kozicki et al., Conductive bridging random access memory, materials, devices and applications. Semiconductor Science and Technology 31, 113001 (2016)

Dates and registration

Winter semester 2026/27: lecture Fridays 15:00 to 16:30 and exercises Fridays 16:30 to 17:15, lecture hall HS 66.1 (Hans-Sommer-Strasse 66). Registration is via Stud.IP, where you also find slides, exercise sheets and current announcements.