Publikationen

Journalartikel

•  T. Li, X. Guo, F. Müller, S. Abdulazhanov, X. Ma, H. Zhong, Y. Liu, V. Narayanan, H. Yang, K. Ni, T. Kämpfe and X. Li, "Demonstration of high-reconfigurability and low-power strong physical unclonable function empowered by FeFET cycle-to-cycle variation and charge-domain computing", Nature Communications 16 (189) DOI: 10.1038/s41467-024-55380-x
• D. Lehninger, F. Müller, Y. Raffel, S. Yang, M. Neuber, S. Abdulazhanov, T. Kämpfe, K. Seidel, and M. Lederer. "Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems", Advanced Electronics Materials, 2400686 DOI: 10.1002/aelm.202400686

• Y. Qian, D. Huang, A. Vardar, N. Laleni, M. Zhou, K. Ni, T. Kämpfe, C. Zhuo, X. Yin. "Ferroelectric Compute-in-Memory Framework for Solving Pure and Mixed Strategy Nash Equilibrium", IEEE Transactions on Circuits and Systems I: Regular Papers DOI: 10.1109/TCSI.2025.3548871

• A. Vardar, M. Günther, F. Müller, N. Laleni, K. Seidel, and T. Kämpfe. "Reliable Multi-Level Cell Programming in FeFET Arrays for In-Memory Computing", Japanese Journal of Applied Physics DOI: 10.35848/1347-4065/adc745
• Y. Xiao, S. Deng, Z. Jiang, Y. Qin, Z. Zhao, R. Zhang, J. Howe, Y. Lee, J. Duan, R. Joshi, T. Kämpfe, T. Luo, T.-H. Hou, X. Gong, V. Narayanan, K. Ni, "Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory" IEEE Transaction on Electron Devices 72 (6) 3327 - 3334 DOI: 10.1109/TED.2025.3564273
• M. Lederer and T Kämpfe. "Synaptic devices based on ferroelectric hafnium oxide: Recent advances, challenges, and future perspectives", Applied Physics Letters 126 (13) DOI: 10.1063/5.0254762
• R. Zhang, C. Wan, Y. Xu, X. Li, R. Hoffmann, M. Hindenberg, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, T. Kämpfe, G. Yu, and X. Han, "Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies". Physical Review Applied 23 (5) DOI: 10.1103/PhysRevApplied.23.054073

• Y. Jiang, K. Ni, T. Kämpfe, C. Zhuo, Z. Yan, and X. Yin, "CSA-CiM: Enhancing Multifunctional Computing-in-Memory With Configurable Sense Amplifiers". IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 44 (5) 1869 - 1873 DOI: 10.1109/TCAD.2024.3506864

• X. Yin, Q. Huang, H. E. Berkam, F. Müller, S. Deng, A. Vardar, S. De, Z. Jiang, M. Imani, U. Schlichtmann, X. S. Hu, C. Zhuo, T. Kämpfe, K. Ni, "A Homogeneous FeFET-based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search" IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 44 (5) 1856-1868 DOI: 10.1109/TCAD.2024.3492994

• C. Li, X. Huang, Z. Xu, B. Wen, R. Mao, M. Zhou, T. Kämpfe, K. Ni, C. Li, C. Zhuo, X. Yin. "High-Performance In-Memory Bayesian Inference with Multi-Bit Ferroelectric FET". IEEE Transactions on Computers DOI: 10.1109/TC.2025.3576941
• Z. Zhou, H. Zhong, L. Jiao, Z. Zheng, H. Yang, T. Kämpfe, K. Ni, X. Li, X. Gong. "First demonstration of charge-domain content addressable memory based on ferroelectric capacitive memory for 3 reliable and energy-efficient one-shot learning". Nature Communications 16 (1) 8047, DOI: 10.1038/s41467-025-63190-y

Konferenzbeiträge

• G. Fischer, D.K. Huynh, A.A. Mir, Q.H. Le, T. Kämpfe, H. Rücker. "Noise characterization of SiGe HBTs up to 170 GHz". 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (accepted)
• K. Seidel, D. Lehninger, A. Sünbül, R. Hoffmann, R. Revello, N. Yadav, A. Vardar, H. Mähne, K. Bernert, S. Thiem, J. Barbot, T. Kämpfe, M. Lederer. "Integration und Demonstration der 1T1C FeMFET Speichertechnologie für In-Memory-Computing-Anwendungen". MikroSystemTechnik Kongress 2025 (accepted)
• H. Zhong, Z. Zheng, Z. Chen, X. Ma, H. Yang, C. Jiang, T. Kämpfe, K. Ni, X. Gong, X. Li. "Enabling Energy-Efficient and High-Density eDRAM-LUT-Based Computing-in-Memory Using Anti-Ferroelectric Transistors". IEEE European Solid-State Electronics Research Conference (2025) (accepted)
• J.-H. Hsuen, H.-Y. Liu, Y. Raffel, K. Seidel, T. Kämpfe, S. De, M. Lederer, C.-Y. Lin, T.-L. Wu. "Toward Stable FeFET Multi-Level Cell Operations Using Novel Weight Freezing Methodology with Recovery Cycling Scheme for Neuromorphic Applications". 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2025) (accepted)
• M. Neuber, M. S. Benyeogor, M. Czernohorsky, and T. Kämpfe. "Characterization of Pyroelectric Effect in Zr/Si Co-doped HfO2 Thin-Films" 2025 IEEE International Symposium on Applications of Ferroelectrics (IEEE ISAF-ICE-ISIF-PFM 2025) (presented)
• D. Lehninger, A. Sünbül, H. Mähne, T. Kämpfe, A. Viegas, J. Barbot, K. Bernert, S. Thiem, K. Seidel, M. Lederer. 2025 IEEE International Memory Workshop DOI: 10.1109/IMW61990.2025.11026934
• N. Laleni, S. Ranjbar, R. Zhang, A. Tsiougkos, N. Yadav, T. Kämpfe. "Integrating P-bits in MTJs: A Bridge to Efficient Stochastic Computing". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083955
• A. Vardar, L. Zhang, M. Lupp, A. Rehmer, N. Yadav, T. Kämpfe. "People Counting and Positioning Using Low-Resolution Infrared Images for Ressource Constrained Edge Inference". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083958
• N. Yadav, E.K. Falidas, D. Lehninger, K. Seidel, T. Kämpfe. "Low Power and Rail-to-Rail StrongARM DL-Latch Comparator: Design, Analysis and Performance". 14th International Conference on Modern Circuits and System Technology (MOCAST) DOI: 10.1109/MOCAST65744.2025.11083896
• S. Deng, J. Howe, S. Ma, S. Y. Tauki, Z. Zhao, J. Duan, Y. Lee, Y. Qin, R. Joshi, T. Kämpfe, X. Gong, V. Narayanan, K. Ni. "Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation". 2025 International VLSI Symposium on Technology and Circuits DOI: 10.23919/VLSITechnologyandCir65189.2025.11074964
• T. Li, T. Kämpfe, J. Wang, K. Ni, V. Narayanan, H. Yang, and X. Li, "PUFiM: A Robust and Efficient FeFET-Based Security Solution Merging Physical Unclonable Function with Compute-in-Memory for Edge AI". 2025 62th ACM/IEEE Design Automation Conference (DAC) (presented)
• Y. Qian, X. Huang, R. Wang, Z. Yang, M. Zhou, T. Kämpfe, K. Ni, C. Zhuo, X. Yin, "Device-Algorithm Co-Design of Ferroelectric Compute-in-Memory In-Situ Annealer for Combinatorial Optimization Problems". 2025 62th ACM/IEEE Design Automation Conference (DAC) (presented)
• A. Vardar, N. Laleni, M. Li, M. M. Sharifi, M. Günter, F. Müller, Y. Qian, C. Zhuo, X. Yin, M. Niemier, X. S. Hu, K. Seidel, K. Ni and T. Kämpfe, "28nm Ferroelectric Field Effect Transistor Based Associative Memory Array for Few-Shot Learning and Genome Analysis". 2025 International VLSI Symposium on Technology, Systems and Applications (VSLI-TSA) DOI: 10.1109/VLSITSA64674.2025.11047064
• I. Kuznietsov, H.-Y. Liu, Y. Raffel, T. Kämpfe, K. Seidel, M. Lederer, T.-L. Wu. "Investigation of the Gate Dimension Influences on Performance and Reliability of Silicon-Doped Hafnium Oxide (HSO) FeFETs". 2025 International VLSI Symposium on Technology, Systems and Applications (VSLI-TSA) DOI: 10.1109/VLSITSA64674.2025.11047015
• A. Vardar, F. Müller, G. F. C. Podesta, N. Laleni, N. Yadav and T. Kämpfe. "Memory-Efficient Spiking Neural Networks Using MLC FeFETs and Mixed Quantization". IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS) (presented)
• A. Vardar, F. Müller, G. F. C. Podestá, N. Laleni, N. Yadav and T. Kämpfe. "Genetic Algorithm-Driven IMC Mapping for CNNs Using Mixed Quantization and MLC FeFETs". Design, Automation and Test in Europe (DATE) 2025 DOI: 10.23919/DATE64628.2025.10992694
• S. Yang, Y. Raffel, R. Olivo, R. Hoffmann, D. Lehninger, O. Ostien, M. Simon, K. Seidel, T. Kämpfe, G. Gerlach, and M. Lederer, "Defect dynamics and Flicker noise in ferroelectric FETs at cryogenic temperatures". International Reliability Physics Symposium (IRPS) 2025 DOI: 10.1109/IRPS48204.2025.10983580
• J. Barbot, M. Peller, I. E. Robert, K. Bernert, H. Mähne, S. Thiem, D. Lehninger, A. Sünbül, K. Seidel, T. Kämpfe. "Data Retention in co-doped HZO FeCAPs: Roles of FE Thickness and Thermal Budget". IEEE Electron Devices Technology and Manufacturing (EDTM 2025) DOI: 10.1109/EDTM61175.2025.11040648
• S. Yang, Y. Raffel, R. Olivo, F. Müller, R. Hoffmann, D. Lehninger, O. Ostien, M. Simon, K. Seidel, T. Kämpfe, M. Lederer, G. Gerlach. "Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors". 22nd Non-Volatile Memory Technology Symposium (NVMTS) DOI: 10.1109/IRPS48204.2025.10983580
• K. Feng, Q. H. Le, T. Kämpfe and D. Kissinger. "A 120-GHz Sub-6 dB NF and 19 dB Gain Low Noise Amplifier in 22-nm FDSOI". German Microwave Conference (GeMIC) 2025 DOI: 10.23919/GeMiC64734.2025.10979124
• F. Ahmed, K. Feng, Q.H. Le and T. Kämpfe. "Miniaturized 60 GHz Branch-Line Coupler Using Dual Slow-Wave Techniques in 22-nm FDSOI". German Microwave Conference (GeMIC) 2025 DOI:  10.23919/GeMiC64734.2025.10979073
• Q. H. Le, K. Feng, T. Kämpfe. "Analysis of Calibration and De-embedding for On-Wafer Characterization up to 170 GHz in 22-nm FDSOI CMOS Technology". IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) DOI: 10.1109/SiRF63957.2025.11077062

Preprints

• T.N. Afee, J. Hutchins, M.M. Islam, T. Kampfe, A. Aziz. "Embedding-Enhanced Probabilistic Modeling of Ferroelectric Field Effect Transistors (FeFETs)". arXiv preprint arXiv:2508.02737, DOI: arXiv:2508.02737
• R. Zhang, C. Wan, Y. Xu, X. Li, R. Hoffmann, M. Hindenberg, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, T. Kämpfe, G. Yu, and X. Han, "Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies". arxiv preprint arXiv:2501.15206, DOI: 
  arXiv:2501.15206
• T. Kämpfe, R. Zhang, X. Li, C.-H. Wan, R. Hoffmann, M. Hindenberg, Y. Xu, S. Liu, D. Kong, S. Xiong, S. He, A. Vardar, Q. Dai, J. Gong, Y. Sun, Z. Zheng, G. Yu, and X. Han. "Probabilistic Greedy Algorithm Solver Using Magnetic Tunneling Junctions for Traveling Salesman Problem". researchsquare rs-5700548, DOI: 10.21203/rs.3.rs-5700548/v1
• Z. Zhao, V. Darshana Parekh, P.-K. Hsu, Y. Qin, Y. Song, N. A. N. M. Islam, N. Cao, S. Joshi, T. Kämpfe, M. Jung, K. Seo, K. Kim, W. Kim, D. Ha, S. Dutta, A. Sengupta, X. Gong, S. Yu, V. Narayanan, K. Ni. "An In-Situ Spatial-Temporal Sequence Detector for Neuromorphic Vision Sensor Empowered by High Density Vertical NAND Storage". arxiv preprint arXiv:2501.15206, DOI: 10.48550/arXiv.2503.23685
• Z. Jiang, A. N. M. N. Islam, Z. Han, Z. Zhao, F. Müller, J. Duan, H. Mulaosmanovic, S. Dünkel, S. Beyer, S. Dutta, V. Narayanan, T. Kämpfe, S. G. Cardwell, F. Chance, A. Sengupta, K. Ni. "A Bio-inspired Asymmetric Double-Gate Ferroelectric FET for Emulating Astrocyte and Dendrite Dynamics in Neuromorphic Systems", DOI: 10.48550/arXiv.2504.14466
• Y. Qian, X. Huang, R. Wang, Z. Yang, M. Zhou, T. Kämpfe, C. Zhuo, X. Yin. "Device-Algorithm Co-Design of Ferroelectric Compute-in-Memory In-Situ Annealer for Combinatorial Optimization Problems", DOI: 
  10.48550/arXiv.2504.21280

Journalartikel

Konferenzbeiträge

Preprints