For the structural characterization of our thin films and multilayers manufacured by the different deposition methods we employ various analytical methods.
X-Ray diffraction serves to determine the crystal structure an crystalline perfection of the prepared thin films and ceramics. With this method the lattice constants, the volume fraction of other phases and the orientiation of the crystals are determined. During the measurement a narrow, collimated X-ray beam radiates the sample and the resulting reflexes are analyzed.
To determine during growth lattice constants and growth velocity in our laser-molecular-beam-epitaxy we employ a RHEED-System. Here, an electron beam hits the surface of the substrate crystal under a very low angle of incidence. Depending on the amount of mobile atoms on the surface during deposition the intensity of the reflected electron beam changes. With very smooth, atomically flat surfaces the reflected intensity is at maximum and with half covering of the next atomic layer the intensity is at minimum. This way, the growth of the thin film can be controlled atomic layer by atomic layer. In addition, the deflection of the electron beam at the atomic lattice of the surface atoms allows to analyze the lattice constants during thin film growth.
Elektron diffraction by using thetransmission elektronen microscope TEM is also possible.