Rank
Year
Citations
1
Im, J.S., Kollmer, H., Off, J., Sohmer, A., Scholz, F., Hangleiter, A.
Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells
1998
Physical Review B 57 (16), pp. R9435-R9438
536
2
Hangleiter, A., Hitzel, F., Netzel, C., Fuhrmann, D., Rossow, U., Ade, G., Hinze, P.
Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency
2005
Physical Review Letters 95 (12), 127402, pp. 1-4
179
3
Im, J.S., Moritz, A., Steuber, F., V. Härle, Scholz, F., Hangleiter, A.
Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
1997
Applied Physics Letters 70 (5), pp. 631-633
158
4
Hangleiter, A., Im, J.S., Kollmer, H., Heppel, S., Off, J., Scholz, F.
Role of piezoelectric fields in GaN-based quantum wells
1998
MRS Internet J. Nitride Semicond. Res. 3, 21
112
5
Michler, P., Hangleiter, A., Moser, M., Geiger, M. Scholz, F.
Influence of barrier height on carrier lifetime in GaInP/AlGaInP quantum wells
1992
Physical Review B 46, pp. 7280-
95
6
Frankowsky, G., Steuber, F., V. Härle, Scholz, F., Hangleiter, A.
Optical gain in GaInN/GaN heterostructures
1996
Applied Physics Letters 68 (26), pp. 3746-3748
72
7
Hangleiter, A., Hitzel, F., Lahmann, S., Rossow, U.
Composition dependence of polarization fields in GaInN/GaN quantum wells
2003
Applied Physics Letters 83 (6), pp. 1169-1171
65
8
Kollmer, H., Im, J.S., Heppel, S., Off, J., Scholz, F., Hangleiter, A.
Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields
1999
Applied Physics Letters 74 (1), pp. 82-84
64
9
Fuchs, G., Hörer, J., Hangleiter, A., Härle, V. Scholz, F.
Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures
1992
Applied Physics Letters 60, 231 (1992).
64
10
Scheibenzuber, W.G., Schwarz, U.T., Veprek, R.G., Witzigmann, B., Hangleiter, A.
Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
2009
Physical Review B 80 (11), 115320
62
11
Fuchs, G., Schiedel, C., Hangleiter, A., Härle, V., Scholz, F.
Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum well lasers
1993
Appl. Phys. Lett. 62, 396 (1993)
62
12
Moritz, A., Wirth, R., Hangleiter, A., Kurtenbach, A., Eberl, K.
Optical gain and lasing in self-assembled InP/GaInP quantum dots
1996
Applied Physics Letters 69 (2), pp. 212-214
59