M.Sc. Eike Trumann presented his paper at EuroSimE 2025 in Utrecht, which deals with the physically based simulations of radiation effects on logic inverter circuits in a CMOS device with a structure size of 180 nm. The paper is titled “TCAD Simulation of Radiation Effects on 180 nm Logic Inverters” and provides insights into the effects of irradiating ionizing particles and displacement damage on these circuits.

In his work, a technology computer-aided design (TCAD) model was combined with a radiation model to enable the simulation of charged particles. For the simulation of displacement damage, proton energies between 1 and 10 MeV and neutron energies between 1.6 and 14 MeV were evaluated to estimate the resulting transistor threshold voltages.