iap/info/mitarbeiter/Recombination processes in quantum-wellshangleiter/publikationen/rekombination-qw
iap/info/mitarbeiter/Recombination processes in quantum-wellshangleiter/publikationen/rekombination-qw
iap/info/mitarbeiter/Recombination processes in
quantum-wellshangleiter/publikationen/rekombination-qw
Recombination processes in quantum-wells
F. Scholz, G. Frankowsky, A. Hangleiter, V. Härle, P. Michler, D. Ottenwälder, K. Streubel, C.Y. Tsai "Photoluminescence studies on GaInAs/InP quantum wells'' in Handbook of Optical Properties, Vol. II, Optics of small particles,interfaces, and surfaces, edited by R.E. Hummel and P. Wißmann (CRC Press, Boca Raton, 1997).
C.Y. Tsai, M. Moser, C. Geng, T. Forner, P. Michler, A. Hangleiter, F. Scholz "Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy'' 7th International Conference on MOVPE, Yokohama, Japan, 1994, J. Crystal Growth. 145, 786 (1994).
A. Hangleiter, P. Michler, T. Forner, A. Moritz, G. Fuchs, V. Härle, M. Moser, K. Zieger, F. Scholz "Nonradiative and radiative recombination of electrons and holes in quantum wells'' Proceedings of the 22nd International Conference on the Physics of Semiconductors (Vancouver, Canada, August 1994), edited by D.J. Lockwood (World Scientific, Singapore, 1995), p. 827.
V. Härle, H. Bolay, E. Lux, F. Scholz, P. Michler, A. Moritz, T. Forner, A. Hangleiter "Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures'' in Proceedings of the 6th International Conference on Indium Phosphide and Related Materials, Santa Barbara, CA, 1994, p. VIII/6.
P. Michler, T. Forner, V. Hofsäá, F. Prins, K. Zieger, F. Scholz, A. Hangleiter "Nonradiative recombination via strongly localized defects in quantum wells'' Phys. Rev. B 49, 16632 (1994).
V. Härle, H. Bolay, E. Lux, F. Scholz, P. Michler, A. Moritz, T. Forner, A. Hangleiter "Indirect bandgap transition in strained GaInAs/InP quantum well structures'' J. Appl. Phys. 75, 5067 (1994).
P. Michler, A. Hangleiter, A. Moritz, G. Fuchs, V. Härle, F. Scholz "Indirect excitons in strained GaxIn1-xP quantum wells'' in Proceedings of the 3rd International Conference on Optics of Excitons in Confined Systems, (Montpellier, France, August 1993), Journal de Physique IV, Vol. 3, C5, 269 (1993).
C. Geng, M. Moser, F. Scholz, P. Cygan, P. Michler, A. Hangleiter "Optical investigations on strained GaInP quantum wells'' in Proceedings of the 20th International Symposium on Gallium Arsenide and Related Compounds, (Freiburg, Germany, September 1993)
A. Hangleiter "Recombination of correlated electron-hole pairs in two-dimensional semiconductors'' Phys. Rev. B. 48(15), 9146 (1993).
P. Michler, A. Hangleiter, A. Moritz, G. Fuchs, V. Härle, F. Scholz "Direct-to-indirect energy gap transition in strained GaInAs/InP quantum wells'' Phys. Rev. B. 48(15), 11991 (1993).
P. Michler, A. Hangleiter, A. Moritz, V. Härle, F. Scholz "Influence of exciton ionization on recombination dynamics in In0.53Ga0.47As/InP quantum wells'' Phys. Rev. B 47(15), 1671 (1993).
P. Michler, A. Hangleiter, R. Dieter, F. Scholz "Identification of a nonradiative recombination center in GaAs'' J. Appl. Phys. 72, 4449 (1992).
P. Michler, A. Hangleiter, M. Moser, M. Geiger, F. Scholz "Influence of barrier height on carrier lifetime in Ga1-yIny/(AlxGa1-x)1-yInyP single quantum wells'' Phys. Rev. B. 46, 7280 (1992).
