The research work carried out by the Applied Semiconductor Physics working group is mainly organised in the form of externally funded projects. It is divided into the following areas:
Physics of Group III nitrides
Reduction of defect densities
Optimisation of the quantum yield of QW structures
Investigation of In incorporation in GaInN quantum films with high In content
Investigation of In incorporation in GaInN quantum films on non-polar surfaces
Development of efficient UV emitter structures
Material technology of Group III nitrides
Microscopic causes of radiative recombination in nitrides
Non-radiative recombination processes and defects in nitrides
