TU BRAUNSCHWEIG

apl. Prof. Dr. Andrey Bakin Andrey Bakin

Institut für Halbleitertechnik

TU Braunschweig

Hans-Sommer-Straße 66

38106 Braunschweig  

Tel. 0531 391-3779

Fax 0531 391-5844

E-Mail: A.Bakin@tu-braunschweig.de

 

Arbeitsgebiete:

  • Nanostrukturen, Schichten und Kristalle: Cu2O, ZnO, MoO3, MoS2, SiC, Ga2O3, II/VI, III/N, III/V
    für die Optoelektronik, Photovoltaik und Hochtemperatur Elektronik
    (Herstellung mittels VPE, VPT, PE-ALD, MOCVD, Sublimation, Chem. Wachstum, MBE;
    Charakterisierung und weitere Anwendungen). Sustainable Energy Conversion using Earth-Abundant Materials
  • Arbeitsgruppenleiter:   Oxidische Materialien, Epitaxie, 2D Materialien, Nanotechnologie und Photovoltaik
  • Ehemalige AG-Mitglieder: Prof. Dr. A.-H.Elshaer, Dr. M. M. S. Abd El-Fatah, Dr. A. Wagner, V. M. Borras,  M. S. Mohajerani, A. Behrends, Dr. N. Heuck, Dr. M. Al-Suleiman, Dr. V. Petukhov, Dr.E.Schlenker, Dr.B.Postels, Dr. A.C.Mofor; R. Hankers, F. Kremer, N. Schmidt, V. Günzel, J. Hammer, M. Stahl, G. Scholz, S. Krämer,  A. Fahl, N. Ehrhardt, H. Scherg, C. Kabrodt, M.Michael,  A.Langer, T.Otto, M.Garstka, F.Baars, P.Sebbes, C.El-Hayek, M.Kowalczyk, S.Liske, T.Sauerberg, E.Butkus, R.Bürger, G.Tchego, S.S.Guy, U.S.Chejarla, J.Turki, J.Fernandez

 Publikationen (h-index: 27;   i10-index: 67)  Researcher Profile at GOOGLE scholar 

                     ResearcherID:

                      Research Gate


 Recent Highlights:

  •  Installation of PEALD system (Picosun)
  • Conversion of old AIX-200 MOCVD into new Closed Coupled Showerhead (CCS) MOCVD system
  • Organizing of Focused Session "Sustainable photovoltaics with earth abundant materials" at DPG-2014 Meeting (03.04.2014, Dresden)
  • Organizing of Symposium "Copper- and Zinc oxide based materials for sustainable energy technologies" at EMRS 2014 Fall Meeting (September 15-19, 2014, Warsaw)

Lehre:

  • Dünnschichttechnik (VL+ÜE)
  • Nano- und Polikristalline Materialien (VL+ÜE)
  • Nanotechnik in der Mikroelektronik (VL+ÜE)
  • Labor Elektronische Technologie I (mit Prof. Waag)
  • Labor Elektronische Technologie II (mit Prof. Waag)
  • NanoSystemsEngineering-Labor und Kolloquium (mit Profs. Waag, Kowalsky, Schilling)
  • Seminar für Bachelor/Master NanoSystemsEngineering
  • Studienseminar für Halbleitertechnik (Diplom)

Lebenslauf:

Andrey Bakin erhielt den Diplom-Ingenieur und die Dr.-Würde der Elektrotechnischen Universität St.-Petersburg (früher LETI)*, Russland in den Jahren 1981 bzw. 1985. 
Bis 1988 untersuchte er dort das Wachstum von IV/VI-Verbindungshalbleitern und entwickelte IR-Sensoren. Für ein Jahr (1988-1989) und drei Monate (1993) arbeitete er im Institut für Halbleitertechnik der Technischen Universität Braunschweig am gitterfehlangepassten Wachstum von III/V-Halbleitern auf Silizium. Von 1989 bis 1994 beschäftigte er sich als Postdoc und Assistant Professor an der Elektrotechnischen Universität St.-Petersburg mit dem Sublimationswachstum von SiC-Kristallen. Von 1994 bis 1995 untersuchte er verschiedene Verfahren des SiC-Wachstums (HTCVD, CVD, Sublimation) in der Abteilung für Physik und Messtechnik der Universtät Linköping, Schweden. Bis 1998 nahm er danach wieder die Arbeiten am SiC-Sublimationswachstum in St. Petersburg als Associate Professor auf. Seit 1998 ist er im Institut für Halbleitertechnik  der Technischen Universität Braunschweig. Dort arbeitet er an der Kristallzucht von II/VI-, III/V-, III/N- und IV/IV-Verbindunsghalbleitern mittels VPE, MBE, MOVPE, PEALD und chemischen Methoden für die Anwendung in optoelektronischen, elektronischen und mikromechanischen Bauelementen und auch als niederdimensionale Strukturen. 2004 - erfolgreiche Habilitation. Seit 2015 außerplanmäßiger Professor. Er leitet Epitaxie, Nanotechnologie und Photovoltaik AG.

* Saint Petersburg Electrotechnical University "LETI" (ETU) has an outstanding reputation as a higher education institution with strong traditions. ETU is considered as one of the world largest education and research centres in Radio Engineering, Electrical Engineering, Electronics and Computer Science.

Habilitation

  • Habilitationsarbeit: "Gas phase growth of compound semiconductors"
  • Wissenschaftlicher Vortrag: "Nanotechnik", TU Braunschweig (19.04.2004)
  • Antrittsvorlesung: "Verbindungshalbleiter - zwischen Silizium und Zukunft (Herstellung und potenzielle Anwendungen)", TU Braunschweig (21.07.2004) 

Dissertation

  • Wachstum und Charakterisierung von Blei-Zinn-Tellurid-Mischkristallschichten und -kristallen sowie Entwicklung von Bauelementen auf deren Basis, St.-Petersburger Elektrotechnische Universität (1985)

Gutachterliche Tätigkeiten

  • DFG
  • DAAD
  • U.S. Department of Energy (DoE), USA
  • Journal of Crystal Growth 
  • Nanotechnology  
  • physica status solidi  
  • Journal Materials Science and Engineering
  • Journal of Physics D: Applied Physics
  • Superlattices and Microstructures  
  • Central European Journal of Physics
  • Journal of Materials Science  
  • The Croucher Foundation, Hong Kong
  • Linköping University, Sweden
  • Hungarian Scientific research Fund, Hungary

Eingeladene Vorträge: 

  • Thin layers and nanostructures for sustainable energy conversion: advanced epitaxial technologies and prospects of low-cost alternative approaches (A. Bakin) International Scientific School on Epitaxial Technologies of Novel Materials and Nanostructures, Ioffe Institute, St.-Petersburg, March 15-17, 2017  
  • Oxides for Sustainable Photovoltaics with Earth Abundant Materials (A. Bakin et al) SPIE Photonics West, Conference OE 108, Oxide-based Materials and devices V; San Francisco, California, USA, February 1-6, 2014
  • Oxides for Sustainable Photovoltaics (A. Bakin) Forschungszentrum Jülich, March 2, 2012
  • Oxide Semiconductors for Photovoltaic Applications (A. Bakin) 15th International Conference on II-VI Compounds; Mayan Riviera, Mexico, August 21-26, 2011
  • Wide band gap Nanorods: ZnO and GaN (A. Bakin) 4th French GDR Workshop "Semiconductors Nanowires and Nanotubes” ; Autrans, France , June 30 - July 3, 2009
  • ZnO Based Nanostructures and Thin Layers for Device Applications (A. Bakin) 214th Meeting of ECS - PRIME 2008 Joint International Meeting of The Electrochemical Society; Symposium : ZnO Based Thin Films, Nano-Wires and Nano-Belts for Photonic And Electronic Devices And Sensors , Honolulu, Hawaii, USA , October 12 - 17, 2008  
  • ZnO Nanostructures for device applications (A. Bakin) EMRS 2008 Spring Meeting; Symposium G : Wide band gap semiconductor nanostructures for optoelectronic applications , Strasbourg, France , May 26 - 30, 2008  
  • ZnO Epitaxial Growth (A. Bakin) Status Meeting "Challenges facing ZnO and GaN: Facts and Myths" , US Airforce Meeting, Attendance by invitation only, Richmond, Virginia, USA , October 17 - 18, 2007  
  • ZnO: Towards Realization of Nano-LEDs (A. Bakin, A. Waag) 4th China International Forum & Exhibition on Solid State Lighting, Shanghai, China , 22-24 August 2007  
  • Wide Bandgap Nanostructures for Future Lighting Applications (A. Bakin) International Short Course on MOCVD Technology, Shanghai, China, 22 August 2007  
  • ZnO-ZnMgO quantum wells grown by MBE on ZnO nanorods European MBE Conference, Sierra Nevada , Spain , 5-7 March 2007  
  • Nanotechnologie-Verbindungstechnik (A. Bakin) Industriekonferenz Immenstaad b. Friedrichshafen, ”EEE-Bauteile für die Raumfahrt”, 25. Januar 2007
  • ZnO Nanostructures, Thin Films and Devices ( A. Bakin) Plenary Talk, E-MRS Fall Meeting, Warsaw , 3-8 Sepember, 2006
  • ZnO-based thin films and nanostructures: fabricartion, properties and applications ( A. Bakin) Scientific Seminar, Institute of Anorganic Chemistry , Bonn University University , April 20, 2006
  • ZnO Technology for Photonic Applications ( A. Bakin ), Sentech Seminar "Plasma Process Technology", Berlin-Adlershof, October 24th, 2005.
  • State-of-the-Art in Defect Control of Bulk SiC. (A. Bakin). High Temperature Electronic Materials, Devices and Sensors Conference, February 22-27, 1998, San Diego, California USA

Publikationen (h-index: 27;   i10-index: 67):

  • J Xu, M Bertke, A Gad, F Yu, G Hamdana, A Bakin, E Peiner .Fabrication of ZnO Nanorods on MEMS Piezoresistive Silicon Microcantilevers for Environmental Monitoring. Multidisciplinary Digital Publishing Institute Proceedings 1 (4), 290, 2017

  • Kruskopf, K. Pierz, D. M. Pakdehi, S. Wundrack, R. Stosch, A. Bakin, H. W. Schumacher .Tailoring the SiC surface - a morphology study on the epitaxial growth of the buffer layer  and graphene. arXiv.org, 26.04.2017, http://arxiv.org/abs/1704.08078

  • B. Liu, H. Yan, R. Stosch, B. Wolfram, M. Bröring, A. Bakin, M. Schilling, P. Lemmens. Modelling plexitons of periodic gold nanorod arrays with molecular components.  Nanotechnology, 2017doi: 10.1088/1361-6528/aa67d8

  • F. Yu, S. Yao, F. Römer, B. Witzigmann, T. Schimpke, M. Strassburg, A. Bakin, H. W. Schumacher, E. Peiner, H.S. Wasisto, A. Waag. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.  Nanotechnology, 2017doi: 10.1088/1361-6528/aa57b6

  • F Yu, D Rümmler, J Hartmann, L Caccamo, T Schimpke, M Strassburg, AE Gad, A Bakin, H-H Wehmann, B Witzigmann, HS Wasisto, A Waag. Vertical architecture for enhancement mode power transistors based on GaN nanowires.  Applied Physics Letters, 2016, V. 108, issue 21, 213503-1 - 5, doi: 10.1063/1.4952715

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Effect of Potentiostatic and Galvanostatic electrodeposition modes on the basic parameters of solar cells based on Cu2O thin films.  Electrochemical Society Journal of Solid State Science and Technology, 2016, V. 5, issue 6, Q183-Q187, doi: 10.1149/2.0191606jss

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Wagner, V. M. Borras, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Fabrication and Characterization of low cost Cu2O/ZnO solar cells for sustainable photovoltaics with earth abundant materials. Solar Energy Materials and Solar Cells, Elsevier, SOLMAT8042, 2016, V. 145, pp. 454-461; doi: 10.1016/j.solmat.2015.11.015

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Wagner, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Fabrication and Characterization of flexible solar cell from electrodeposited Cu2O thin films on plastic substrate. Solar Energy, Elsevier, 122 (2015); DOI: http://dx.doi.org/10.1016/j.solener.2015.11.002

  • H.S. Wasisto, F. Yu, L. Doering, S. Völlmeke, U. Brand, A. Bakin, A. Waag, E. Peiner. Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices. SPIE Microtechnologies, 951723-951723-7, (2015)

  • A. Wagner, M. Stahl, N. Erhardt, A. Fahl, J. Ledig, A. Waag, and A. Bakin. Oxides for sustainable photovoltaics with earth-abundant materials. Invited Paper. Proc. SPIE 8987, Oxide-based materials and Devices V, 989726 (March 8, 2014); doi: 10.1117/12.2044734

  • A. Bakin, A. Behrends, A. Wagner, A. Waag. Fabrication of ZnO Nanostructures. Invited Chapter in “Zinc Oxide Nanostructures“ ed. by M. Willander, Pan Stanford Publishing Pte Ltd, ISBN 978-981-4411-33-2 (2014) 

  • M. Lafrentz, D. Brunne, V. V. Pavlov, A. V. Rodina, R. V. Pisarev, D. R. Yakovlev, A. Bakin, and M. Bayer. Second harmonic generation spectroscopy of excitons in ZnO. Phys. Rev. B 88, 235207 (2013) [20 pages] PRB Editors' suggestion 

  • A. Wagner, H. Scherg-Kurmes, A. Waag and A. Bakin. Vapour phase epitaxy of Cu2O on a-plane Al2O3. Physica Status Solidi, Volume 2, Issue 12 (2013) 

  • J.D. McNamara, A. Behrends, M.S. Mohajerani, A. Bakin, A. Waag, A.A. Baski, M.A. Reshchikov. Surface photovoltage in heavily doped GaN: Si, Zn. AIP Conf. Proc., 1583, 287 (2014)

  • M. Lafrentz, D. Brunne, A. V. Rodina, V. V. Pavlov, R. V. Pisarev, D. R. Yakovlev, A. Bakin, and M. Bayer. Second harmonic generation spectroscopy of excitons in ZnO. Condensed Matter > Mesoscale and Nanoscale Physics (2013)

  • M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, A. V. Rodina,R. V. Pisarev, D. R. Yakovlev, A. Bakin, and M. Bayer. Magneto-Stark effect of excitons as origin of second harmonic generation in ZnO. Physical Review Letters (PRL), 110, 116402 (2013)

  • M. S. Mohajerani, M.A. Reschikov, A. Behrends, A. Bakin, S. Kück, A. Waag. Determination of zinc concentration in GaN:Zn,Si from
    photoluminescence
    . Phys. Status Solidi C 10, No. 3, 523–526 (2013)

  • H. Horn, A. Balocchi,X. Marie, A. Bakin, A. Waag, M. Oestreich, J. Hübner. Spin noise spectroscopy of donor-bound electrons in ZnOPhysical Review B, 87, No. 4, 054312 (2013)

  • M.A. Reschikov, J. D. McNamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag. Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn. Phys. Status Solidi C 10, No. 3, 507–510 (2013)

  • M.A. Reschikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped  with Si and Zn. Applied Physics, 111, iss. 7 (2012) http://jap.aip.org/resource/1/japiau/v111/i7/p073106_s1

  • A. Behrends, A. Wagner, M. A. M. Al-Suleiman, H.-J. Lugauer, M. Strassburg, R. Walter, A. Weimar, Andreas Waag, and A. Bakin. Transparent conductive Ga-doped ZnO films fabricated by MOCVD Phys. Status Solidi A, (2012) DOI 10.1002/pssa.201127324

  • A. Wagner, A. Behrends, A. Waag, A. Bakin.  Two step deposition method with a high growth rate for ZnO nanowire arrays and its application in photovoltaics. Thin Solid Films, 520 (14) , pp. 4637-4641 (2012)

  • A. Wagner, A. Bakin, T. Otto, M. Zimmermann, B. Jahn,  A. Waag.   Fabrication and Characterization of Nanoporous ZnO Layers for Sensing Applications. Thin Solid Films, 520 (14) , pp. 4662-4665 (2012)

  • A. Behrends,  J. Ledig, M. A. M. Al-Suleiman, S. Peters, A. M. Racu, W. Schmunk, H. Hofer, S. Kück, A. Bakin, A. Waag. Zn doped GaN for single-photon emission Phys. Status Solidi C, (2012)  9 (3-4) , pp. 1024-1027

  • A. Bakin, A. Waag.   ZnO Epitaxial Growth. Invited Chapter for “Comprehensive Semiconductor Science and Technology“ Encyclopaedia ELSEVIER, edited by R. Fornari (2011)  ISBN: 978-0-444-53143-8

  • M.A. Reschikov, A.G. Willuard, A. Behrends, A. Bakin, A. Waag.   Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si. Applied Physics Letters, 99, 171110 (2011)

  • N. Heuck, A. Langer, A. Stranz, G. Palm, R. Sittig, A. Bakin, and A. Waag. Analysis and Modeling of Thermomechanically Improved Silver-Sintered Die-Attach Layers Modified by Additives. IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, (2011), 1 (11) , art. no. 6045323 , pp. 1846-185

  • V. Petukhov, A. Bakin, J. Tsiaosusis, J. Rothman, S. Ivanov, J. Stoemenos, A. Waag.   Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire. Jornal of Crystal Growth (2011) 323 (1) , pp. 111-113V. 

  • M.A.Bobrov, A.A.Toropov, S.V.Ivanov, A. ElShaer, A. Bakin, A. Waag.   Excitonic Spectrum of the ZnO/ZnMgO Quantum Wells. Semiconductors (2011) Vol. 45, No. 6, pp. 766–770

  • V. Petukhov, J. Stoemenos, J. Rothman, A. Bakin, A. Waag.   Interpretation of transport measurements in ZnO-thin films. Appl. Phys. A., V. 102, n. 1 (2011) pp. 161-168

  • V. Petukhov, J. Stoemenos, J. Rothman, A. Bakin, A. Waag.   Erratum: Interpretation of transport measurements in ZnO-thin films. Appl. Phys. A., V. 102, n. 1 (2011) pp. 251

  • A. Bakin, A. Behrends, A. Waag, H.-J. Lugauer, A. Laubusch and K. Streubel.   ZnO – GaN Hybrid Heterostructures as Potential Cost Efficient LED Technology. IEEE (Invited Paper for a special volume), Proceedings of the IEEE, 2010, vol. 98, N. 7, pp. 1281-1287.s

  • A. Behrends, A. Bakin, A. Waag, H.-S. Kwack, and Le Si Dang.   Electroluminescence from nZnO/p–GaN Hybrid LED. Phys. Stat. Sol. C V. 7, Iss. 6  (2010) 1709-1711

  • N. Heuck, G. Palm, T. Sauerberg, A. Waag, A. Bakin   SiC-Die-Attachment for High Temperature Applications. Materials Science Vols. 645-648, Trans Tech Publications, 2010, pp. 741-744.

  • N. Heuck, F. Baars, A. Waag, A. Bakin   Development of Wire-bond Technology for SiC High-Temperature Applications. Materials Science Vols. 645-648, Trans Tech Publications, 2010, pp. 741-744.

  • S. Fündling, Ü. Sökmen, A. Behrends, M. Al-Suleiman, S. Merzsch, S.F. Li, A. Bakin, H.-H. Wehmann, A. Waag, J. Lähnemann, U. Jahn, A. Trampert, H. Riechert   GaN and ZnO nanostructures. Phys. Stat. Sol. B 247 (2010) 2315-2328

  • M. A. M. Al-Suleiman, A. Bakin, A. Waag   Mechanisms for high internal quantum efficiency of ZnO nanorods. Journal of Applied Physics, 106 (2009) 063111

  • Robin, I.C., Marotel, P., El-Shaer, A.H., Petukhov, V., Bakin, A., Waag, A., Lafossas, M., Garcia, J., Rosina, M., Ribeaud, A., Brochen, S., Ferret, P., Feuillet, G.   Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires. Journal of Crystal Growth, V. 311, (2009), iss. 7, pp. 2172-2175

  • A.Behrends, A. Bakin, A.Waag.   Investigation of ZnO Nanopillars Fabrication in a new Thomas Swan Close Coupled Showerhead MOCVD Reactor. Microelectronics Journal, 40 (2009) 280-282

  • M Willander,O Nur,Q X Zhao,L L Yang, M Lorenz, B Q Cao,JZuiga Perez, C Czekalla, G Zimmermann,M Grundmann,A Bakin, A Behrends, M Al-Suleiman, A El-Shaer, A Che Mofor, B Postels, A Waag,N Boukos,A Travlos,H S Kwack, ,J Guinard and D Le Si Dang     Topical Review: Zinc oxide nanorod based photonic devices: recent progress in growth,light emitting diodes and lasers Nanotechnology, 20 (2009) 332001 (40pp)

  • S. Fündling, S. F. Li, B. Postels, M. Al-Suleiman, H.-H. Wehmann, A. Bakin, A. Waag.   MOVPE gallium-nitride nanostructures fabricated on ZnO nanorod templates grown from aqueous chemical solution. IOP Conf. Series: Materials Science and Engineering 6 (2009) 012003

  • A. Bakin, A. Wagner, E. Schlenker, B. Postels, M. Al-Suleiman, A. Behrends, A.-H. Elshaer, V. Petukhov, A.Waag.   ZnO Nanostructures and Thin Layers for Device Applications. ECS Transactions, Volume 16(12) The Electrochemical Society (2008) 107

  • N. Heuck, A. Bakin, A. Waag   Multilayer-Sinterschichten-Struktur für ein Die-Attachment mit Nanopulvern, Erfindungsmeldung, Braunschweig 2008

  • Fündling, S., Soekmen, U., Peiner, E., Weimann, T., Hinze, P., Jahn, U., Trampert, A., Riechert, H., Bakin, A., Wehmann, H.-H., Waag, A.     Gallium nitride heterostructures on 3D structured silicon. Nanotechnology, 19 (40) (2008) 405301

  • Hofstetter, D., Thron, R., El-Shaer, A.-H., Bakin, A., Waag, A.  Demonstration of a ZnO/MgZnO- based one-dimensional photonic crystal multlquantum well laser. Applied Physics Letters, 93 (10), (2008)101109

  • Fündling, S., Sökmen, U., Peiner, E., Weimann, T., Hinze, P., Jahn, U., Trampert, A., Riechert, H., Bakin, A., Wehmann, H.-H., Waag, A.   Demonstration of a ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser. Applied Physics Letters, 93 (10), (2008) 101109

  • E. Schlenker,A. Bakin,T. Weimann, P.Hinze, D.H.Weber,A. Gölzhäuser,H-H. Wehmann and A. Waag   On the difficulties in characterizing ZnO nanowires, Nanotechnology 19 (2008) 365707

  • Eva Schlenker,Andrey Bakin, Hergo-Heinrich Wehmann, Augustine Che Mofor, Arne Behrends, Andreas Waag, Thomas Weimann, Peter Hinze, Alexander Melnikov and Andreas D. Wieck   Electrical Properties of ZnO-Based Nanostructures, Journal of the Korean Physical Society, Vol. 53, No. 1, July 2008, pp. 119-122

  • E. Schlenker, A. Bakin, H.-H. Wehmann, M. Al-Suleiman, and A. Waag  Investigation of Mn doped ZnO Nanopowder, Appl. Phys. A, 2008, V. 91, Iss. 4, pp. 375-378

  • B. Postels, A. Kasprzak, T. Buergel, A. Bakin, E. Schlenker, H.-H. Wehmann, A. Waag   Dye-sensitized solar cells on the basis of ZnO nanorods. Journal of the Korean Physical Society Vol. 53, No. 1, (2008) 115-118

  • B. Postels, H-H Wehmann, A. Bakin, T. Weimann, P.Hinze, A. Waag  Electrodeposition of ZnO nanorods for device application, Appl. Phys. A, 2008, V. 91, Iss. 4, pp. 595-599

  • Robin, I.C., Tavares, C., Rothman, J., Feuillet, G., El-Shaer, A.H., Bakin, A., Waag, A., Dang, L.S.   Structural and spectroscopic properties of a 2 inch ZnO-on-sapphire epiwafer grown by using molecular beam epitaxy. Journal of the Korean Physical Society, 53 (5 PART 2) (2008), pp. 2877-2879

  • C. Bekeny, T. Voss, B. Hilker, J. Gutowski, R. Hauschild, H. Kalt, B. Postels, A. Bakin, A. Waag.   Microscopic origin oft he near-band-edge emission in aqueos chemically-grown ZnO nanorods. Journal of the Korean Physical Society 53(5), (2008) 2867-2869

  • Ivanov, S.V., El-Shaer, A., Al-Suleiman, M., Bakin, A., Waag, A., Lyublinskaya, O.G., Shmidt, N.M., Listoshin, S.B., Kyutt, R.N., Ratnikov, V.V., Terentyev, A.Ya., Ber, B.Ya., Komissarova, T.A., Ryabova,L.I., Khokhlov, D.R.   Studies of N-doped p-ZnO layers grown on c-sapphire by radical source molecular beam epitaxy. Journal of the Korean Physical Society, 53 (5 PART 2), (2008) 3016-3020.

  • A. Bakin, J. Kioseoglou , B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, A. Waag  Misfit reduction by a Spinel layer formed during the epitaxial growth of ZnO on Sapphire using a MgO buffer layer, J. Crystal Growth, 308, 2007, pp. 314–320

  • A.Bakin, A. El-Shaer, A.C.Mofor, M. Al-Suleiman, E. Schlenker, and A.Waag ZnMgO-ZnO Quantum Wells Embedded in ZnO Nanopillars: Towards Realisation of Nano-LEDs , Phys. Stat. Solidi (c), vol. 4, n1, 2007, pp. 158-161

  • A. Waag, A.El-Shaer, A.C. Mofor, M.Al-Suleiman, B.Postels, E.Schlenker, H.Wehmann, A. Bakin. ZnO based nanostructures for optoelectronics SPIE Photonics West, 2007, 6474-41 San Jose, USA

  • T.V. Shubina, A.A. Toropov, O.G. Lublinskaya, S.B. Listoshin, A.A. Sitnikova, El-Shaer, M. Al-Suleiman, A. A. Bakin, A. Waag, E.V. Lutsenko, G.P. Yablonskii, J.P. Bergman, G Pozina, B. Monemar, S.V. Ivanov.   Exciton recombination dynamics and lasing in ZnMgO/ZnO single quantum well structures , Applied Phys. Lett. 91 (2007) 201104 (1-3)

  • D. Hofstetter, Y. Bonetti, F. R. Giorgetta, A-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann  Demonstration of an ultraviolet ZnO-based optically pumped 3rd order distributed feedback laser, Appl. Phys. Lett. 91, 2007, 111108

  • V. Petukhov, A. Bakin, A.-H. El-Shaer, A.-C. Mofor, and A. Waag  Etch-Pit Density Investigation on Both Polar Faces of ZnO Substrates, Electrochemical and Solid-State Letters, vol. 10, n. 12 2007

  • D. H. Weber, A. Beyer, B. Völkel, A. Gölzhäuser, E. Schlenker, A. Bakin, A. Waag Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope APPLIED PHYSICS LETTERS, 2007, 91, 253126

  • M. Al-Suleiman, A. El-Shaer, A. Bakin, H.-H.Wehmann and A.Waag  Properties of V-implanted ZnO nanorods, Appl. Phys. Lett. 91, 2007, 081911

  • B. Piechal, J. Yoo, A-H. Elshaer, A-C. Mofor, G-C. Yi, A. Bakin, A. Waag, F. Donatini, Le Si Dang  Cathodoluminescence of single ZnO nanorod heterostructures, Phys. Stat. sol. (b), V. 244, Iss. 5, 2007, pp. 1458-1461

  • E. Schlenker, A. Bakin, H. Schmid, W. Mader, S. Sievers, M. Albrecht, C. Ronning, S. Müller, M. Al-Suleiman, B. Postels, H. Wehmann, U. Siegner, A. Waag  Properties of V-implanted ZnO nanorods, Nanotechnology, 2007, vol. 18, 125609

  • B. Postels, H-H. Wehmann, A. Bakin, M. Kreye, D. Fuhrmann, J. Blaesing, A. Hangleiter, A. Krost and A. Waag Controlled low temperature fabrication of ZnO nanopillars with a wet-chemical approach, Nanotechnology, *18*, 195602 (2007)

  • Werner Prost, Victor Khorenko, Augustine-Che Mofor , Stefan Neumann, Artur Poloczek, Andreas Matiss, Andrey Bakin, Andreas Schlachetzki, and Franz-Josef Tegude High Performance III/V RTD and PIN Diode on a Silicon (001) substrate, Journal Applied Physics A: Materials Science and Processing, Springer, vol. 87, n. 3, 2007, pp. 539-544

  • A. Bakin , A. Che Mofor, A. El-Shaer, and A. Waag Vapour Phase Transport Growth of ZnO Layers and Nanostructures , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 33-39

  • A. Bakin ZnO Nanostructures, thin Films and Devices Invited Plenary Talk, E-MRS Fall Meeting, Warsaw, 3-8 Sepember, 2006

  • A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov , A. Che Mofor, and A. Waag Growth of wide band gap wurtzite ZnMgO epilayers on (0001) Al2O3 by radical-source molecular beam epitaxy , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 129-133

  • A. C. Mofor, A. S. Bakin, B. Postels, M. Suleiman, A. Elshaer, A. Waag Growth of ZnO Layers for Transparent and Flexible Electronics , J. Superlattices and Microstructures, Elsevier, 2006 (in press)

  • A. El-Shaer, A. Bakin, A. Che Mofor, J. Stoimenos, B. Pécz, and A. Waag Layer by layer growth of ZnO on (0001) sapphire substrates by radical-source molecular beam epitaxy , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 158-164

  • B. Pecz, A. El-Shaer, A. Bakin, A.-C. Mofor, J. Stoemenos and A. Waag Structural characterization of ZnO films grown by Molecular Beam Epitaxy on Sapphire with MgO buffer , JAP 100, 103506, 2006

  • T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Börner, W. Schade, A. C. Mofor, A. S. Bakin, A. Waag Influence of exciton-phonon coupling on the energy position of the near bandedge photoluminescence of ZnO nanowires , JAP 2006 (in press)

  • S.V. Ivanov, A. El-Shaer, T.V. Shubina, S.B. Listoshin, A. Bakin, and A. Waag Growth kinetics and properties of ZnO/ZnMgO heterostruc-tures grown by radical-source molecular beam epitaxy , Phys. Stat. Solidi (c) 4, No. 1, 2007, pp. 154–157

  • E. Schlenker, A. Bakin, B. Postels, A.C. Mofor, M. Kreye, C. Ronning, S. Sievers, M. Albrecht, U. Siegner, R. Kling, A. Waag Magnetic characterisation of ZnO doped with Vanadium , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 236-241

  • L. Wischmeier, T. Voss, I. Rückmann, and J. Gutowski, A. C. Mofor, A. S. Bakin, A. Waag Kinetics of surface-excitonic emission in ZnO nanowires , Phys. Rev. B 2006 (in press)

  • A. C. Mofor, A. Bakin, U. Chejarla, E. Schlenker, A. El-Shaer, G. Wagner, N. Boukos, A. Travlos and A. Waag Fabrication of ZnO Nanorod-based p-n Heterojunction on SiC Substrate , Superlattices and Microstructures, Elsevier, vol. 42, iss. 1-6, 2007, pp. 415-420

  • A. El-Shaer, A. Bakin, E. Schlenker, A. C. Mofor, G. Wagner, S. A. Reshanov and A. WaagFabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 387-391

  • B. Postels, M. Kreye, H.-H. Wehmann, A. Bakin, N. Boukos, A. Travlos, D. Fuhrmann, A. Hangleiter, A. Waag Selective growth of ZnO nanorods in aqueous solution , J. Superlattices and Microstructures, Elsevier, 42, 2007, pp. 425-439

  • A C Mofor, A El-Shaer, M Suleiman, A Bakin and A Waag A two-step obtainment of quantum confinement in ZnO nanorods , Nanotechnology, 17, 2006, pp. 4859-4862

  • A. C. Mofor, A. S. Bakin, A. El-Shaer, D. Fuhrmann, F. Bertram, A. Waag Vapour Phase Growth of ZnO Nanorods , Appl. Phys. A, DOI: 10.1007/s00339-007-3961-5 (2007)

  • A. El-Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pecz, M. Kreye, A. Waag H2O2-Molecular Beam Epitaxy of high quality ZnO Journal Applied Physics A: Materials Science and Processing, Springer 88, 2007, 57

  • A.C. Mofor, F. Reuß, A. El-Shaer, R. Kling, E. schlenker, A. Bakin, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, W. Limmer, J. Eisenmenger, Th. Mueller, P. Ziemann, and A. Waag Magnetism in Zn(TM)O layers and nanorods grown on Sapphire , Journal Applied Physics A: Materials Science and Processing, Springer, vol. 88, 2007, pp. 161-166

  • A. Bakin. SiC homoepitaxy and heteroepitaxy , Invited Chapter in the book: "SiC Materials and Devices – vol. 1", ed. by M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, World Sci. (2006). ISBN 981-256-835-2

  • A. C. Mofor , A. S. Bakin, A. Elshaer, D. Fuhrmann, F. Bertram, A. Hangleiter, J. Christen and A. Waag Catalyst-free Vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20) Al2O3 , Phys. Stat. Solidi, (c) 3, No. 4, 2006, pp. 1046–1050.

  • A. El Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pécz, M. Kreye, M. Heuken, and A. Waag CBE Growth of High-Quality ZnO Epitaxial Layers , Phys. Stat. Solidi (b), V. 243, no.4, 2006, pp 768-772 .

  • A.C. Mofor, F. Reuss, A. El-Shaer, H. Ahlers, U. Siegner, A. Bakin, W. Limmer, J. Eisenmenger, Th. Mueller, P. Ziemann, and A. Waag A Study of ZnMnO as a material for magneto- and spin-electronics , Phys. Stat. Solidi (c), V.3, no. 4, 2006, pp. 1104-1108.

  • C. Klingshirn,  H. Priller, M. Decker, J. Brückner, H. Kalt, R. Hauschild, J. Zeller, A. Waag, A. Bakin, H. Wehmann,  K. Thonke, R. Sauer, R. Kling, F. Reuss, Ch. Kirchner. Excitonic Properties of ZnO, Chapter in: Adnvances in Solid State Physics, Volume 45, 2006, pp 275-287

  • A. Che Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, J. Stoimenos. Magnetic Property investigations on Mn-doped ZnO layers on sapphire , J. Applied Physics Letters,  87, 2005, 062501.

  • A. Bakin, A. El-Shaer, A. Che Mofor, M. Kreye, A. Waag, F. Bertram, J. Christen, J. Stoimenos. MBE growth of ZnO layers on sapphire employing hydrogen peroxide as an oxidant , J. of Crystal Growth, V. 287, n. 1, 2006, pp. 7-11.

  • A. Che Mofor, A. El-Shaer , A. Bakin, H.-H. Wehmann, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, J. Stoimenos. Magnetic Property Investigation of ZnMnO , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 381-386 .

  • O. Schmidt, A. Geis, P. Kiesel, N. Johnson, A. Bakin, A. Waag, and G. Doehle. Analysis of a conducting channel at the native zinc oxide surface , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 8-16.

  • V. Avrutin, N. Izyumskaya, Ü. Özgür, A. El-Shaer, H. Lee, W. Schoch, F. Reuss, V.G. Beshenkov, A.N. Pustovit, A. Che Mofor, A. Bakin, H. Morkoç and A. Waag Optical and electrical properties of ZnMnO layers grown by peroxide MBE , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 291-298.

  • A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, A. Waag. High-Quality ZnO Layers Grown by MBE on Sapphire , J. Superlattices and Microstructures, Elsevier, V. 38, n. 4-6, 2005, pp. 265-271 .

  • A. Bakin ZnO Technologie für Anwendungen in der Photonik (invited Talk) , Sentech Seminar "Plasma Process Technology", Berlin-Adlershof, October 24th, 2005.

  • F. Bertram, S. Giemsch, J. Christen, A. El-Shaer , A. Bakin, A. Waag. Direct Visualization of the Bound Exciton Distribution of Self-organized Grown ZnO Pyramids by Cathodoluminescence Microscopy , E-MRS 2005, Spring Meeting, Symposium G, ZnO and Related Materials, Strasbourg, May 31-June 3, 2005 .

  • V. Avrutin, Ü. Özgür, H. Lee, H. Morkoç, A. Che Mofor, A. El-Shaer , A. Bakin, and A. Waag, N. Izyumskaya, W. Schoch, F. Reuss, V. Beshenkov, A.N. Pustovit, A.F. Vyatkin. Optical and electrical properties of ZnMnO layers grown by peroxide MBE , E-MRS 2005, Spring Meeting, Symposium G, ZnO and Related Materials, Strasbourg, May 31-June 3, 2005 .

  • H.-H. Wehmann, R. Kling, F. Reuss, C. Kirchner, A. Che Mofor, A. Bakin, M. Kreye, A. Waag, M. Albrecht, S. Sievers, H. Ahlers, U. Siegner: ZnO-based Nanopillars for Optoelectronics and Magnetoelectronics; 11th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques (EW-MOVPE XI), June 5 - 8, 2005, Lausanne, Switzerland, extended abstracts book, pp. 233-236

  • A. El-Shaer, A. Che Mofor, A. Bakin, N. Izyumskaya, V. Avrutin, W. Schoch, F. Reuß, A. Waag, H. Ahlers, U. Siegner. Novel Oxidant for ZnO Molecular Beam Epitaxy , Soxess Workshop on ZnO and Related Materials, October 27 - 30, Caernarfon, United Kingdom, 2004

  • R. Kling, C. Kirchner, T. Gruber, F. Reuss, A. Bakin, H. Wehmann and A. Waag. Binary, Doped and Ternary ZnO Nanopillars , Soxess Workshop on ZnO and Related Materials, October 27 - 30, Caernarfon, United Kingdom, 2004

  • A. Bakin, A. El-Shaer, N. Izyumskaya, V. Avrutin, W. Schoch, A. Che Mofor, F. Reuß, A. Waag New approach to molecular beam epitaxy of high-quality ZnO , The 3rd International Workshop on ZnO and Related Materials, October 5 - 8, Sendai, Japan, 2004

  • R. Kling, C. Kirchner, T. Gruber, F. Reuss, A. Bakin, H. Wehmann and A. Waag Analysis of binary, doped and ternary ZnO nanopillars , The 3rd International Workshop on ZnO and Related Materials, October 5 - 8, Sendai, Japan, 2004

  • Kling R., Kirchner C., Gruber Th., Reuss F., Bakin A., Wehmann H.H., Waag A. Growth and characterization of ZnO-based nanopillars , Proc. 16th International Vacuum Congress (IVC-16), June 28 - July 2, Venice, Italy, 2004 p. 177 [1139]

  • V. Khorenko, A.C. Mofor, A. Bakin, S. Neumann, A. Guttzeit, H.-H. Wehmann, W. Prost,A. Schlachetzki and F.-J. Tegude. Buffer optimization InP-on-Si (001) Quasi-Substrates , 2004 International Conference on Indium Phosphide and Related Materials (16 th), May 31 - June 4, 2004 Kagoshima,Japan, Conference Proceedings ISBN: 0780385950, pp. 118-121

  • S.Neumann, A. Bakin, P.Velling, W.Prost, F.-J.Tegude, H.-H.Wehmann, A.Schlachetzki, F.-J.Tegude. Growth of III/V Resonant Tunneling Diode on Si Substrate with LP-MOVPE , Journal of Crystal Growth
    V. 248, 2003, pp. 380-383

  • F.B.Klose, U.Harms, H.Neuhäuser, I.Behrens, A. Bakin, and A.Schlachetzki. Mechanical Spectroscopy of Pure and Fe-Doped InP Films on Silicon Cantilevers , Defect and Diffusion Forum, Scitec Publications, Switzerland, Vols. 206-207, 2002, pp. 179-182

  • A. Bakin, D. Piester, I. Behrens, H.-H. Wehmann, E. Peiner, A. Ivanov, D. Fehly, A.Schlachetzki. Growth of InP Layers on Nanometer-Scale Patterned Si Substrates. , Journal of Crystal Growth
    & Design, American Chemical Society, Vol. 3, nr. 1, 2003, pp. 89-93
    Web Release Date: November 28, 2002

  • A.Bakin, H.-H.Wehmann, A.Schlachetzki, S.Neumann, W.Prost, F.-J.Tegude, P.Velling: III/V on Si: Quasi substrates and further device fabrication; 10th MEL-ARI/NID Workshop, Helsinki, Finland, July 1-3, 2002

  • I. Behrens, E. Peiner, A. Bakin, A.Schlachetzki. Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition , Journal of Micromechanics and Microengineering, V. 12, nr. 4, 2002, pp. 380-384

  • S.Neumann, A. Bakin, P.Velling, W.Prost, F.-J.Tegude, H.-H.Wehmann, A.Schlachetzki. Growth of III/V Resonant Tunneling Diode on a Si Substrate with LP-MOVPE , 11th International Conference on Metalorganic Vapour Phase Epitaxy, Berlin, June 3-7, 2002

  • Klose F. B., Harms U., Neuhäuser H., Bakin A., Behrens I., Peiner E., Wehmann H.-H., Schlachetzki A., Rösler J. Elastic and anelastic properties of Fe-doped InP films on silicon cantilevers J. Appl. Phys. V. 91, 2002, pp. 9031-9038

  • Bakin A., Behrens  I. , Ivanov  A.  , Peiner  E. , Piester D. , Wehmann H.-H. , Schlachetzki A. Growth of SiC on Si(100) by LPCVD and Patterning of the Grown Layers (Proc. of the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), Oct. 28 - Nov. 2, 2001, Tsukuba, Japan) Mater. Sci. Forum 389-393 Trans Tech Pub., Switzerland, 2002, pp.327-330.

  • Piester D., Ivanov  A. A. , Bakin A. S. , Wehmann  H.-H., Schlachetzki A.   Semiconductor nanostructures for quantum wire lasers.  in: A.V. Andreev, P.A. Apanasevich, V.I. Emel'yanov, A.P. Nizovtsev (Eds.): ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; Proc. SPIE, 4748, 2002, pp. 476-485

  • Fehly D., Schlachetzki A., Bakin A., Guttzeit A.,  and Wehmann H.H. Monolithic InGaAsP Optoelectronic Devices with  Silicon Electronics. IEEE Journal of Quantum Electronics, V. 37, No. 10, 2001, pp. 1246-1252.

  • Neumann S., Velling P., Prost W., Tegude F.-J., Bakin A.S., Wehmann H.-H., Schlachetzki A. Wachstum von Resonanz Tunnel Strukturen auf Si-Substrat mittels LP-MOVPE. DGKK-Workshop "III-V-Epitaxie", Berlin 6.-7.12, 2001

  • Ivanov A., Piester D., Bakin A., Wehmann H.-H., Schlachetzki A. Implementation of the glancing x-ray reflection method for InP, GaInAs and Si surfaces investigations. DGKK-(Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung) Workshop "Epitaxie von III/V-Halbleitern", Berlin 6.-7.12, 2001

  • Behrens I. ,  Peiner  E.,  Bakin A. and  Schlachetzki A.. Micromachining of Silicon Carbide on Silicon Fabricated by Low-Pressure Chemical Vapour Deposition. 12th Micromechanics Europe Workshop (MME2001), September 16-18, 2001, Cork, Ireland, Proceedings pp. 43-45.

  • D. Piester, A.A. Ivanov, A.S. Bakin, H.-H. Wehmann , A. Schlachetzki. InGaAs/InP Nanostrukturen für Quantendrahtlaser. Photonik-Symposium, Baden bei Wien, 23. - 25. September 2001

  • H.-H. Wehmann, A. Bakin, D. Fehly, A. Schlachetzki. Monolithisch integrierte III/V-Bauelemente auf Si für eine optoelektronische Schnittstelle. Workshop „Optische Technologien" im Rahmen der Veranstaltungsreihe „Mikrosysteme in Niedersachsen", Göttingen, 22. 9. 2000

  • I.Behrens, E.Peiner, A. S. Bakin, A. Schlachetzki. Influence of substrate preparation on fracture properties of InP cantilevers. J. Osvald, S. Hascik, J. Kuzmik, J. Breza (Eds.): ASDAM 2000, The Third International EuroConference on Advanced Semiconductor Devices and Microsystems, October 16-18 2000, Smolenice Castle, Slovakia, IEEE (2000), 387-390 

  • I.Behrens, E.Peiner, K.Fricke, A.Bakin, A.Schlachetzki. Concept of a Gyroscope in Hetero-Micromachining , 10th European Heterostructure Technology Workshop, September 18-19, 2000, University of Ulm, International Institute Schloss Reisensburg, Günzburg, Germany, (2000)

  • Behrens, E. Peiner, K. Fricke, A. Bakin, A. Schlachetzki. Spring-Mass Resonator with a Composite Beam Structure fabricated in Hetero-Micromachining, Proc. 14th Europ. Conf. Solid-St. Transducers (Eurosensors XIV), August 27-30, 2000, Copenhagen, Denmark, (2000) 511-514 

  • T. Klaffs, A. A. Ivanov, A. S. Bakin, D. Piester, M. Ursu, A. Schlachetzki, L. Hvozdara, G. Strasser, B. Güttler. Intersubband absorption in d-doped InGaAs-InP multi-quantum wells.  Proc. of 3rd Intern. EuroConf. on Advanced Semiconductor Devices and Microsystems - ASDAM 2000, October 16-18 2000, Smolenice Castle, Slovakia (2000) 383-386 

  • D. Piester, A. A. Ivanov, A. S. Bakin, T. Klaffs, M. Ursu, H.-H.Wehmann, A. Schlachetzki. Homogeneity of InGaAs/InP Nano-Structures. Proc. of 3rd Intern. EuroConf. on Advanced Semiconductor Devices and Microsystems - ASDAM 2000, October 16-18 2000, Smolenice Castle, Slovakia (2000) 251-254

  • Bakin A.S., Ivanov A.A., Piester D., Riedl T., Hitzel F., Wehmann H.-H., Schlachetzki A.    Growth of SiC on Si(100) by low-pressure MOVPE. ECSCRM 2000, Kloster Banz, Germany, September 3-7, 2000. Trans Tech Publications, pp. 163-166

  • E. Peiner, K. Fricke, I.Behrens, A. Bakin, A. Schlachetzki.   Hetero-micromachining of epitaxial III/V compound semiconductors. Sensors and Actuators 85 (2000) 324-329  

  • Bakin A.S., Piester D., I.Behrens, Wehmann H.-H., D. Fehly, E.Peiner, Schlachetzki A., Rösler J.   Novel Approach To Nanometer-Scale Patterning of Silicon Substrates. MRS 2000 Spring Meeting, San Francisco, CA, USA 24-28.4.2000 K2.2  

  • Bakin A.S., Piester D., Wehmann H.-H., Ivanov A.A., Schlachetzki A., Becker K.D. Formation of Self-Assembled Nanometer-Scale InP Islands on Silicon Substrates. Mat. Res. Soc. Symp. Proc., V. 618, 2000, pp. 27-32

  • Bakin A.S., Piester D., I.Behrens, Wehmann H.-H., D. Fehly, E.Peiner, Schlachetzki A., Rösler J.   InP Growth on Patterned Si Substrates and Nanometer-Scale Patterning of Silicon Substrates. DGKK-Workshop "III-V-Epitaxie", Stuttgart 8.-9.12.99 

  • Bakin  A.S.,  Dorozhkin  S.I., Tairov Yu.M., Lebedev A.O., Kirillov B.A., Ivanov A.A., Tairov Yu.M. Stress and misoriented area formation under large silicon carbide boule growth. Journal of Crystal Growth, v. 198/199, 1999, pp. 1015-1018.

  • Bakin A.S., Dorozhkin S.I. State-of-the-Art in Defect Control of Bulk SiC. (Invited talk). In: Conf. Proceedings of 1998 High Temperature Electronic Materials, Devices and Sensors Conference, February 22-27, 1998, San Diego, California USA, pp. 2-13.(IEEE Catalog Number 98EX132).

  • Bakin  A.S.,  Dorozhkin  S.I., ZubrilovA.S., Kuznetsov N.I., Tairov Yu.M. Optically Transparent 6H-Silicon Carbide. In: Silicon Carbide. Inst. Phys. Conf. Ser. No: Chapter 1 Paper pres. at the 7th International Conf. on Silicon carbide and Related Materials-1997 (ICSCRM '97), Stockholm, Sweden

  • Bakin A.S., Dorozhkin S.I., Bogachov S.S., Kazak-Kazakevich A.Z., Lyutetskaja I.G., Sazanov A.P. Surface Processing of Silicon Carbide Substrates. Materials Science and Engineering, B46, 1997, pp.370-373.

  • Kordina O., Hallin C., Ellison A., Bakin A.S., Ivanov. I., Henry. A, Yakimova. R., Tuominen M.,  Vehanen A., Janzen E. High Temperature Chemical Vapour Deposition of SiC. J. of Applied Physics Letters., v. 69, n.11, 1996, pp.1456-1460.

  • Bakin A.S., Dorozhkin S.I., Tairov Yu.M., Dyomin Yu. Reduction of Micropipe Defects Formation at the Initial Stages of  SiC sublimation Growth. In: High Temperature Electronics Conference (HiTEC-III) Albuquerque, USA, June 10-14, 1996.

  • Bakin A.S., Hallin C., Kordina O., Janzen E. High Resolution XRD Study of   the Silicon Carbide CVD Growth. In: Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 433-436.

  • Hallin C., Bakin A.S., Owman F., Martensson P., Kordina O., Janzen E. Study of the Hydrogen Etching of Silicon Carbide Substrates. In: Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 3 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 613-616.

  • Avrov D.D., Bakin A.S., Dorozhkin S.I.  Migration of Isolated Pores in Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 73-76.

  • Tuominen M., Yakimova R., Bakin A.S., Ivanov. I., Henry. A, Vehanen A., Janzen E.. Control of the Rate-determining Step of the Silicon Carbide Sublimation Growth. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 45-48.

  • Yakimova R., Tuominen M., Bakin A.S., Fornell J.-O., Vehanen A., Janzén E. Silicon Carbide Liquid Phase Epitaxy in the Si-Sc-C System. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 101-104.

  • Bakin A.S., Dorozhkin S.I., Tairov Yu.M. Aspects of the Crystallization of SiC from the Vapor Phase on a Substrate By the Sublimation Method. Semiconductors, V.28, n.10, 1994, pp.1021-1022

  • Bakin A.S., Zwinge G., Klockenbrink R., Wehmann H.-H., Schlachetzki A. Simulation of the Orientation-dependent Growth of InGaAs/InP by Metalorganic Vapor-Phase Epitaxy. J. Applied  Physics, V.76, n.8, 1994, pp.4906-4908.

  • Bakin A.S., Romanenko V.N., Schilz J., Nikitina G.V., Ivanov D.I. Sizes of Crystallites as a Function of Cooling Rate. Scripta Metallurgica Et Materialia, V.31, n.9, 1994, pp.1131-1134.

  • Bakin A.S., Dorozhkin S.I. Improvements in SiC Defect Structure Control. In: High-temperature Electronics Conference, Hitec-II, Charlotte, NC, USA, 5-10 June 1994, pp. 169.

  • Bakin A.S., Chesnokova D.B., Jaskov D.A. The Pb1-xSnxTe Gas Phase Epitaxy. Journal of Crystal Growth, v. 94, 1989, pp.651-655.

    und viele andere ...                                                                                                                          

Zusammenarbeit mit unterschiedlichen Forschungs-Institutionen:

  • OSRAM Opto Semiconductors, Regensburg, Germany, (Dr. K. Streubel, Dr. H.-J. Lugauer)

  • Department of Physics, Virginia Commonwealth University, Richmond, USA, (Prof. M. Reshchikov, Prof. A. Baski)
  • NIST (National Institute of Standards and technology), US Dept. of Commerce, Gaithersburg, MD, USA, (Dr. A. V. Davydov)

  • Ruhr-University Bochum, Germany (Prof. A. Wieck)

  • Center of Nanoheterostructure Physics Ioffe Physico-Technical Institute of RAS, St.-Petersburg , Russia (Prof. S. Ivanov) 
  • Grillo Zinkoxid GmbH, Germany, (Dr. K. Diekstall)

  • Institute of Experimental Physics II, University Dortmund , Germany (Prof. M. Bayer, Prof. D. Yakovlev)
  • Universität Gießen, Germany (Prof. B. Meyer)

  • Universität Bremen, Germany (Prof. J. Gutowski, PD Dr. T. Voss)

  • Otto von Guericke Universität, Magdeburg, Germany (Prof. J.Christen, Prof. A. Krost)

  • Linköping University , Sweden (Prof. M. Willander, Prof. R. Yakimova, Prof. I. Boyanova)

  • PTB Braunschweig, Germany, (Dr. T. Weimann; Dr. S. Winter; Dr. M.Albrecht, Prof.Dr.U.Siegner)

  • Aristoteles University Thessaloniki , Greece (Prof. J. Stoimenos)

  • CEA-LETI, MINATEC, Grenoble, France (Dr. Francois LEVY, Dr. Guy Feuillet)

  • Université Joseph Fourier Grenoble , France (Prof. Le Si Dang)

  • NCSR "Demokritos", Athen, Greece (Dr. N. Boukos, Dr. A. Travlos)

  • Universität Bonn, Institut für Anorganische Materialforschung, Germany (Prof. W. Mader)

  • Technische Universität Braunschweig, Germany (Prof. P. Lemmens)

  • Technische Universität Braunschweig, Germany (Prof. A. Hangleiter)
  • Leibniz Institute for Crystal Growth (IKZ) , Berlin, Germany,  (Dr. G. Wagner, Prof. Dr. R. Fornari)

  • Universität Ulm, Germany (Prof. Dr. K. Thonke)

  • Universität Jena, Germany (Prof. Dr. C. Ronning)  

  • Polytechnical University of Madrid, Spain (Prof. E. Calleja)

  • CNRS/CRHEA Valbonne , France (Dr. C. Morhain)

  • Electronic Materials Laboratory,Palo Alto Research Center (PARC) CA, USA    (Dr. Peter Kiesel)

  • Solid-State Electronics Department, Universität Duisburg-Essen, Germany (Prof. F.-J. Tegude, Dr. W.Prost)

       und viele andere ...

    Electroluminescence from a n-ZnO/p-GaN hybrid LED


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