TU BRAUNSCHWEIG

 apl. Prof. Dr. Andrey BakinAndrey Bakin

Institute of Semiconductor Technology

TU Braunschweig

Hans-Sommer-Straße 66

D-38106 Braunschweig

Germany

 

phone (+49)531 391-3779

fax (+49)531 391-5844

 

E-Mail: A.Bakin@tu-braunschweig.de

 

Fields of work:

  • 2D-Materials and their stacks (in cooperation with the PTB Braunschweig) gallenene, graphene, novel 2D materials and technologies ...
  • Thin film growth technologies (VPE, PE-ALD, MOCVD, PVT, chemical growth, MBE)
  • Functional Oxides (Cu2O, ZnO, Ga2O3, MoO3, Al2O3, SiO2)
  • Nanostructures, layers and crystals for optoelectronics, nanometrology, sensing, energy conversion: II/VI, III/N, SiC, III/V ...
  • Sustainable Energy Conversion using Earth-Abundant Materials
  • Plasma-profiling Time-of-Flight Mass-Spectrometry (ppTOF-MS) for high-resolution depth profiling


Publications Researcher Profile at Google Scholar

ResearcherID

Teaching:

  • Thin Film Technology
  • Nano- and Polycrystalline Materials
  • Nanotechnology in Microelectronics
  • Electronic technology  I and II - Laboratory course (with Prof. Dr. Waag)
  • Nanosystemsengineering - Laboratory course and colloquium
  • NanoSystemsEngineering - Seminar for Bachelor/Master
  • Semiconductor Technology - Seminar
  • Master-/Bachelor-Works:
                        Plasma Profiling Time-of-Flight Massspectrometry (PP-ToFMS)  - (IHT and Research center LENA)
                        2D Materials (in cooperation with the PTB Braunschweig)

CV:

Andrey Bakin, received the Diploma of Engineer and Ph.D. degrees, both from the St.-Petersburg Electrotechnical University* (former LETI), Russia in 1981 and 1985, respectively, working there till 1988 on growth of IV/VI-compound semiconductors and IR-sensors fabrication. One year in 1988-1989 and three months in 1993 he worked at the Institut für Halbleitertechnik of the Technical University Braunschweig, Germany, where his main field of interest was epitaxial growth of III/V-compound semiconductors. From 1989 to 1994 he worked as senior researcher and Assistant Professor at the St.-Petersburg Electrotechnical University, where he worked on the sublimation growth of SiC crystals. In 1994-1995 he worked at the Department of Physics and Measurement Technology of Linköping University, Sweden on the investigation of silicon carbide HTCVD, CVD and sublimation growth. From 1995 to 1998 he was an Associate Professor at the St.-Petersburg Electrotechnical University, where he worked on the sublimation growth of SiC crystals. In 1998 he joined Institut für Halbleitertechnik (Institute for Semiconductor Technology) of the Technical University Braunschweig, Germany, where his main field of interest is epitaxy of compound semiconductors ( II/VI-, III/V-, III/N- and IV/IV) using VPE, MBE, MOVPE, PEALD as well as chemical approaches for micro- and optoelectronics, micromechanics and nanotechnology. In 2004 he finished his Habilitation at the Technical University of Braunschweig. Since 2015 is extraordinary Professor (außerplanmäßiger Professor). He is Head of Epitaxy, Nanotechnology and Photovoltaics Group.

* Saint Petersburg Electrotechnical University "LETI" (ETU) has an outstanding reputation as a higher education institution with strong traditions. ETU is considered as one of the world largest education and research centres in Radio Engineering, Electrical Engineering, Electronics and Computer Science.

Habilitation

  • Subject of Dr. Habil. thesis: "Gas phase growth of compound semiconductors"
  • Scientific lecture: "Nanotechnology", TU Braunschweig (19.04.2004)
  • Inaugural lecture: "Compound semiconductors: between Si and future (Fabrication and potential applications)", TU Braunschweig (21.07.2004) 

Subject of PhD thesis

  • Growth and characterization of epitaxial layers and bulk crystals of lead-tin-telluride solid solutions and elaboration of devices on the base of this material, St.-Petersburg Electrotechnical University (former LETI) (1985)

Publications:


  • D. M. Pakdehi, K. Pierz, S. Wundrack, J. Aprojanz, T. T. N. Nguyen, T. Dziomba, F. Hohls, A. Bakin, R. Stosch,C. Tegenkamp, F. J. Ahlers,  H. W. Schumacher. Homogeneous Large-Area Quasi-freestanding Monolayer and Bilayer Graphene on SiC. 2019, ACS Appl. Nano Mater.  DOI: 10.1021/acsanm.8b02093

  • S. Wundrack, D. M. Pakdehi, P. Schädlich, F. Speck, K. Pierz, T. Seyller, H. W. Schumacher, A. Bakin, R. Stosch. Probing the structural transition from buffer-layer to quasifreestanding monolayer graphene by raman spectroscopy. Physical Review B, 99, 045443, 2019

  • D. M. Pakdehi, K. Pierz, S. Wundrack, J. Aprojanz, T. T. N. Nguyen, T. Dziomba, F. Hohls, A. Bakin, R. Stosch,C. Tegenkamp, F. J. Ahlers,  H. W. Schumacher. Homogeneous Large-Area Quasi-freestanding Monolayer and Bilayer Graphene on SiC. 2018, arXiv.org, arxiv.org/abs/1811.04998 [cond-mat.mtrl-sci]

  • M. Kruskopf, K. Pierz, D. M. Pakdehi, S. Wundrack, R. Stosch, A. Bakin, H. W. Schumacher. A morphology study on the epitaxial growth of graphene and its buffer layer. Thin Solid Films, V. 659, 2018, pp. 7-15, doi: 10.1016/j.tsf.2018.05.025

  • F. Yu, K. Strempel, M. F. Fatahilah, H. Zhou, F. Römer, A. Bakin, B. Witzigmann, H. W. Schumacher, H.S. Wasisto, A. Waag. Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted p-GaN Channel. IEEE Transactions on Electron Devices, 2018,  doi: 10.1109/TED.2018.2824985

  • J Xu, M Bertke, A Gad, F Yu, G Hamdana, A Bakin, E Peiner .Fabrication of ZnO Nanorods on MEMS Piezoresistive Silicon Microcantilevers for Environmental Monitoring. Multidisciplinary Digital Publishing Institute Proceedings 1 (4), 290, 2017

  • B. Liu, H. Yan, R. Stosch, B. Wolfram, M. Bröring, A. Bakin, M. Schilling, P. Lemmens. Modelling plexitons of periodic gold nanorod arrays with molecular components.  Nanotechnology, 2017, doi: 10.1088/1361-6528/aa67d8

  • M. Kruskopf, K. Pierz, D. M. Pakdehi, S. Wundrack, R. Stosch, A. Bakin, H. W. Schumacher. Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer . 2017, arXiv.org, https://arxiv.org/abs/1704.08078

  • F. Yu, S. Yao, F. Römer, B. Witzigmann, T. Schimpke, M. Strassburg, A. Bakin, H. W. Schumacher, E. Peiner, H.S. Wasisto, A. Waag. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.  Nanotechnology, 2017, doi: 10.1088/1361-6528/aa57b6

  • F Yu, D Rümmler, J Hartmann, L Caccamo, T Schimpke, M Strassburg, AE Gad, A Bakin, H-H Wehmann, B Witzigmann, HS Wasisto, A Waag. Vertical architecture for enhancement mode power transistors based on GaN nanowires.  Applied Physics Letters, 2016, V. 108, issue 21, 213503-1 - 5, doi: 10.1063/1.4952715

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Effect of Potentiostatic and Galvanostatic electrodeposition modes on the basic parameters of solar cells based on Cu2O thin films. Electrochemical Society Journal of Solid State Science and Technology, 2016 volume 5, issue 6, Q183-Q187, doi: 10.1149/2.0191606jss

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Wagner, V. M. Borras, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Fabrication and Characterization of low cost Cu2O/ZnO solar cells for sustainable photovoltaics with earth abundant materials. Solar Energy Materials and Solar Cells, Elsevier SOLMAT8042, 2016, V. 145, pp. 454-461; doi: 10.1016/j.solmat.2015.11.015

  • M. Abdelfatah, J. Ledig, A. El-Shaer, A. Wagner, A. Sharafeev, P. Lemmens, M. M. Mosaad, A. Waag, and A. Bakin. Fabrication and Characterization of flexible solar cell from electrodeposited Cu2O thin films on plastic substrate. Solar Energy, Elsevier, 122 (2015); DOI: http://dx.doi.org/10.1016/j.solener.2015.11.002

  • H.S. Wasisto, F. Yu, L. Doering, S. Völlmeke, U. Brand, A. Bakin, A. Waag, E. Peiner. Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices. SPIE Microtechnologies, 951723-951723-7, (2015)

  • A. Wagner, M. Stahl, N. Erhardt, A. Fahl, J. Ledig, A. Waag, and A. Bakin. Oxides for sustainable photovoltaics with earth-abundant materials. Invited Paper. Proc. SPIE 8987, Oxide-based materials and Devices V, 989726 (2014); doi: 10.1117/12.2044734

  • A. Bakin, A. Behrends, A. Wagner, A. Waag. Fabrication of ZnO Nanostructures. Invited Chapter in “Zinc Oxide Nanostructures“ ed. by M. Willander, Pan Stanford Publishing Pte Ltd, ISBN 978-981-4411-33-2 (2014)

  • M. Lafrentz, D. Brunne, V. V. Pavlov, A. V. Rodina, R. V. Pisarev, D. R. Yakovlev, A. Bakin, and M. Bayer. Second harmonic generation spectroscopy of excitons in ZnO. Phys. Rev. B 88, 235207 (2013) [20 pages] PRB Editors' suggestion 

  • A. Wagner, H. Scherg-Kurmes, A. Waag and A. Bakin. Vapour phase epitaxy of Cu2O on a-plane Al2O3. Physica Status Solidi, 2013, Volume 2, Issue 12 (2013)

  • A. Bakin, A. Behrends, A. Wagner, A. Waag. Fabrication of ZnO Nanostructures. Invited Chapter in “Zinc Oxide Nanostructures“ ed. by M. Willander, Pan Stanford Publishing Pte Ltd, ISBN 978-981-4411-33-2 (2013)

  • M. Lafrentz, D. Brunne, B. Kaminski, V. V. Pavlov, A. V. Rodina,R. V. Pisarev, D. R. Yakovlev, A. Bakin, and M. Bayer. Magneto-stark effect of excitons as origin of second harmonic generation in ZnO. Physical Review Letters (PRL), 110, 116402 (2013)

  • M. S. Mohajerani, M.A. Reschikov, A. Behrends, A. Bakin, S. Kück, A. Waag. Determination of zinc concentration in GaN:Zn,Si from
    photoluminescence
    . Phys. Status Solidi C 10, No. 3, 523–526 (2013)

  • H. Horn, A. Balocchi,X. Marie, A. Bakin, A. Waag, M. Oestreich, J. Hübner. Spin noise spectroscopy of donor-bound electrons in ZnO. Physical Review B, 87, No. 4, 054312 (2013)

  • M.A. Reschikov, J. D. McNamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag. Higher than 90% internal quantum efficiency of photoluminescence in GaN:Si,Zn. Phys. Status Solidi C 10, No. 3, 507–510 (2013)

  • M.A. Reschikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag. Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped  with Si and Zn. Applied Physics, 111, iss. 7 (2012) http://jap.aip.org/resource/1/japiau/v111/i7/p073106_s1

  • A. Behrends, A. Wagner, M. A. M. Al-Suleiman, H.-J. Lugauer, M. Strassburg, R. Walter, A. Weimar, Andreas Waag, and A. Bakin. Transparent conductive Ga-doped ZnO films fabricated by MOCVD Phys. Status Solidi A, (2012) DOI 10.1002/pssa.201127324

  • A. Wagner, A. Behrends, A. Waag, A. Bakin.  Two step deposition method with a high growth rate for ZnO nanowire arrays and its application in photovoltaics. Thin Solid Films, 520 (14) , pp. 4637-4641 (2012)

  • A. Wagner, A. Bakin, T. Otto, M. Zimmermann, B. Jahn,  A. Waag.   Fabrication and Characterization of Nanoporous ZnO Layers for Sensing Applications. Thin Solid Films, 520 (14) , pp. 4662-4665 (2012)

  • A. Behrends,  J. Ledig, M. A. M. Al-Suleiman, S. Peters, A. M. Racu, W. Schmunk, H. Hofer, S. Kück, A. Bakin, A. Waag. Zn doped GaN for single-photon emission Phys. Status Solidi C, (2012)  9 (3-4) , pp. 1024-1027

  • A. Bakin, A. Waag.   ZnO Epitaxial Growth. Invited Chapter for “Comprehensive Semiconductor Science and Technology“ Encyclopaedia ELSEVIER, edited by R. Fornari (2011)  ISBN: 978-0-444-53143-8

  • M.A. Reschikov, A.G. Willuard, A. Behrends, A. Bakin, A. Waag.   Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si. Applied Physics Letters, 99, 171110 (2011)

  • N. Heuck, A. Langer, A. Stranz, G. Palm, R. Sittig, A. Bakin, and A. Waag. Analysis and Modeling of Thermomechanically Improved Silver-Sintered Die-Attach Layers Modified by Additives. IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, (2011), 1 (11) , art. no. 6045323 , pp. 1846-185

  • V. Petukhov, A. Bakin, J. Tsiaosusis, J. Rothman, S. Ivanov, J. Stoemenos, A. Waag.   Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire. Jornal of Crystal Growth (2011) 323 (1) , pp. 111-113V. 

  • M.A.Bobrov, A.A.Toropov, S.V.Ivanov, A. ElShaer, A. Bakin, A. Waag.   Excitonic Spectrum of the ZnO/ZnMgO Quantum Wells. Semiconductors (2011) Vol. 45, No. 6, pp. 766–770

  • V. Petukhov, J. Stoemenos, J. Rothman, A. Bakin, A. Waag.   Interpretation of transport measurements in ZnO-thin films. Appl. Phys. A., V. 102, n. 1 (2011) pp. 161-168

  • V. Petukhov, J. Stoemenos, J. Rothman, A. Bakin, A. Waag.   Erratum: Interpretation of transport measurements in ZnO-thin films. Appl. Phys. A., V. 102, n. 1 (2011) pp. 251

  • A. Bakin, A. Behrends, A. Waag, H.-J. Lugauer, A. Laubusch and K. Streubel.  ZnO – GaN Hybrid Heterostructures as Potential Cost Efficient LED Technology. IEEE (Invited Paper for a special volume), Proceedings of the IEEE, 2010, vol. 98, N. 7, pp. 1281-1287.s

  • A. Behrends, A. Bakin, A. Waag, H.-S. Kwack, and Le Si Dang.   Electroluminescence from nZnO/p–GaN Hybrid LED. Phys. Stat. Sol. (c) V. 7, Iss. 6  (2010) 1709-1711

  • N. Heuck, G. Palm, T. Sauerberg, A. Waag, A. Bakin   SiC-Die-Attachment for High Temperature Applications. Materials Science Vols. 645-648, Trans Tech Publications, 2010, pp. 741-744.

  • S. Fündling, Ü. Sökmen, A. Behrends, M. Al-Suleiman, S. Merzsch, S.F. Li, A. Bakin, H.-H. Wehmann, A. Waag, J. Lähnemann, U. Jahn, A. Trampert, H. Riechert   GaN and ZnO nanostructures. Phys. Stat. Sol. B 247 (2010) 2315-2328

  • M. A. M. Al-Suleiman, A. Bakin, A. Waag   Mechanisms for high internal quantum efficiency of ZnO nanorods. Journal of Applied Physics, 106 (2009) 063111

  • Robin, I.C., Marotel, P., El-Shaer, A.H., Petukhov, V., Bakin, A., Waag, A., Lafossas, M., Garcia, J., Rosina, M., Ribeaud, A., Brochen, S., Ferret, P., Feuillet, G.   Compared optical properties of ZnO heteroepitaxial, homoepitaxial 2D layers and nanowires. Journal of Crystal Growth, V. 311, (2009), iss. 7, pp. 2172-2175

  • A.Behrends, A. Bakin, A.Waag.   Investigation of ZnO Nanopillars Fabrication in a new Thomas Swan Close Coupled Showerhead MOCVD Reactor. Microelectronics Journal, 40 (2009) 280-282

  • M Willander,O Nur,Q X Zhao,L L Yang, M Lorenz, B Q Cao,JZuiga Perez, C Czekalla, G Zimmermann,M Grundmann,A Bakin, A Behrends, M Al-Suleiman, A El-Shaer, A Che Mofor, B Postels, A Waag,N Boukos,A Travlos,H S Kwack, ,J Guinard and D Le Si Dang     Topical Review: Zinc oxide nanorod based photonic devices: recent progress in growth,light emitting diodes and lasers Nanotechnology, 20 (2009) 332001 (40pp)

  • A. Bakin, A. Wagner, E. Schlenker, B. Postels, M. Al-Suleiman, A. Behrends, A.-H. Elshaer, V. Petukhov, A.Waag.   ZnO Nanostructures and Thin Layers for Device Applications. ECS Transactions, Volume 16(12) The Electrochemical Society (2008) 107

  • Fündling, S., Soekmen, U., Peiner, E., Weimann, T., Hinze, P., Jahn, U., Trampert, A., Riechert, H., Bakin, A., Wehmann, H.-H., Waag, A.     Gallium nitride heterostructures on 3D structured silicon. Nanotechnology, 19 (40) (2008) 405301

  • Hofstetter, D., Thron, R., El-Shaer, A.-H., Bakin, A., Waag, A.   Demonstration of a ZnO/MgZnO- based one-dimensional photonic crystal multlquantum well laser. Applied Physics Letters, 93 (10), (2008)101109

  • Fündling, S., Sökmen, U., Peiner, E., Weimann, T., Hinze, P., Jahn, U., Trampert, A., Riechert, H., Bakin, A., Wehmann, H.-H., Waag, A.   Demonstration of a ZnO/MgZnO-based one-dimensional photonic crystal multiquantum well laser. Applied Physics Letters, 93 (10), (2008) 101109

  • E. Schlenker,A. Bakin,T. Weimann, P.Hinze, D.H.Weber,A. Gölzhäuser,H-H. Wehmann and A. Waag   On the dfficulties in characterizing ZnO nanowires, Nanotechnology 19 (2008) 365707

  • Eva Schlenker,Andrey Bakin, Hergo-Heinrich Wehmann, Augustine Che Mofor, Arne Behrends, Andreas Waag, Thomas Weimann, Peter Hinze, Alexander Melnikov and Andreas D. Wieck   Electrical Properties of ZnO-Based Nanostructures, Journal of the Korean Physical Society, Vol. 53, No. 1, July 2008, pp. 119-122

  • E. Schlenker, A. Bakin, H.-H. Wehmann, M. Al-Suleiman, and A. Waag  Investigation of Mn doped ZnO Nanopowder, Appl. Phys. A, 2008, V. 91, Iss. 4, pp. 375-378

  • B. Postels, A. Kasprzak, T. Buergel, A. Bakin, E. Schlenker, H.-H. Wehmann, A. Waag   Dye-sensitized solar cells on the basis of ZnO nanorods. Journal of the Korean Physical Society Vol. 53, No. 1, (2008) 115-118

  • B. Postels, H-H Wehmann, A. Bakin, T. Weimann, P.Hinze, A. Waag  Electrodeposition of ZnO nanorods for device application, Appl. Phys. A, 2008, V. 91, Iss. 4, pp. 595-599

  • Robin, I.C., Tavares, C., Rothman, J., Feuillet, G., El-Shaer, A.H., Bakin, A., Waag, A., Dang, L.S.   Structural and spectroscopic properties of a 2 inch ZnO-on-sapphire epiwafer grown by using molecular beam epitaxy. Journal of the Korean Physical Society, 53 (5 PART 2) (2008), pp. 2877-2879

  • C. Bekeny, T. Voss, B. Hilker, J. Gutowski, R. Hauschild, H. Kalt, B. Postels, A. Bakin, A. Waag.   Microscopic origin oft he near-band-edge emission in aqueos chemically-grown ZnO nanorods. Journal of the Korean Physical Society 53(5), (2008) 2867-2869

  • Ivanov, S.V., El-Shaer, A., Al-Suleiman, M., Bakin, A., Waag, A., Lyublinskaya, O.G., Shmidt, N.M., Listoshin, S.B., Kyutt, R.N., Ratnikov, V.V., Terentyev, A.Ya., Ber, B.Ya., Komissarova, T.A., Ryabova,L.I., Khokhlov, D.R.   Studies of N-doped p-ZnO layers grown on c-sapphire by radical source molecular beam epitaxy. Journal of the Korean Physical Society, 53 (5 PART 2), (2008) 3016-3020.

  • A. Bakin, J. Kioseoglou , B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, A. Waag  Misfit reduction by a Spinel layer formed during the epitaxial growth of ZnO on Sapphire using a MgO buffer layer, J. Crystal Growth, 308, 2007, pp. 314–320

  • A.Bakin, A. El-Shaer, A.C.Mofor, M. Al-Suleiman, E. Schlenker, and A.Waag ZnMgO-ZnO Quantum Wells Embedded in ZnO Nanopillars: Towards Realisation of Nano-LEDs , Phys. Stat. Solidi (c), vol. 4, n1, 2007, pp. 158-161

  • T.V. Shubina, A.A. Toropov, O.G. Lublinskaya, S.B. Listoshin, A.A. Sitnikova, El-Shaer, M. Al-Suleiman, A. A. Bakin, A. Waag, E.V. Lutsenko, G.P. Yablonskii, J.P. Bergman, G Pozina, B. Monemar, S.V. Ivanov.   Exciton recombination dynamics and lasing in ZnMgO/ZnO single quantum well structures , Applied Phys. Lett. 91 (2007) 201104 (1-3)

  • D. Hofstetter, Y. Bonetti, F. R. Giorgetta, A-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann  Demonstration of an ultraviolet ZnO-based optically pumped 3rd order distributed feedback laser, Appl. Phys. Lett. 91, 2007, 111108

  • V. Petukhov, A. Bakin, A.-H. El-Shaer, A.-C. Mofor, and A. Waag  Etch-Pit Density Investigation on Both Polar Faces of ZnO Substrates, Electrochemical and Solid-State Letters, vol. 10, n. 12 2007

  • D. H. Weber, A. Beyer, B. Völkel, A. Gölzhäuser, E. Schlenker, A. Bakin, A. Waag Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope APPLIED PHYSICS LETTERS, 2007, 91, 253126

  • M. Al-Suleiman, A. El-Shaer, A. Bakin, H.-H.Wehmann and A.Waag  Properties of V-implanted ZnO nanorods, Appl. Phys. Lett. 91, 2007, 081911

  • B. Piechal, J. Yoo, A-H. Elshaer, A-C. Mofor, G-C. Yi, A. Bakin, A. Waag, F. Donatini, Le Si Dang  Cathodoluminescence of single ZnO nanorod heterostructures, Phys. Stat. sol. (b), V. 244, Iss. 5, 2007, pp. 1458-1461

  • E. Schlenker, A. Bakin, H. Schmid, W. Mader, S. Sievers, M. Albrecht, C. Ronning, S. Müller, M. Al-Suleiman, B. Postels, H. Wehmann, U. Siegner, A. Waag  Properties of V-implanted ZnO nanorods, Nanotechnology, 2007, vol. 18, 125609

  • B. Postels, H-H. Wehmann, A. Bakin, M. Kreye, D. Fuhrmann, J. Blaesing, A. Hangleiter, A. Krost and A. Waag Controlled low temperature fabrication of ZnO nanopillars with a wet-chemical approach, Nanotechnology, *18*, 195602 (2007)

  • Werner Prost, Victor Khorenko, Augustine-Che Mofor , Stefan Neumann, Artur Poloczek, Andreas Matiss, Andrey Bakin, Andreas Schlachetzki, and Franz-Josef Tegude High Performance III/V RTD and PIN Diode on a Silicon (001) substrate, Journal Applied Physics A: Materials Science and Processing, Springer, vol. 87, n. 3, 2007, pp. 539-544

  • A. Bakin , A. Che Mofor, A. El-Shaer, and A. Waag Vapour Phase Transport Growth of ZnO Layers and Nanostructures , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 33-39

  • A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov , A. Che Mofor, and A. Waag Growth of wide band gap wurtzite ZnMgO epilayers on (0001) Al2O3 by radical-source molecular beam epitaxy , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 129-133

  • A. C. Mofor, A. S. Bakin, B. Postels, M. Suleiman, A. Elshaer, A. Waag Growth of ZnO Layers for Transparent and Flexible Electronics , J. Superlattices and Microstructures, Elsevier, 2006 (in press)

  • A. El-Shaer, A. Bakin, A. Che Mofor, J. Stoimenos, B. Pécz, and A. Waag Layer by layer growth of ZnO on (0001) sapphire substrates by radical-source molecular beam epitaxy , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 158-164

  • B. Pecz, A. El-Shaer, A. Bakin, A.-C. Mofor, J. Stoemenos and A. Waag Structural characterization of ZnO films grown by Molecular Beam Epitaxy on Sapphire with MgO buffer , JAP 100, 103506, 2006

  • S.V. Ivanov, A. El-Shaer, T.V. Shubina, S.B. Listoshin, A. Bakin, and A. Waag Growth kinetics and properties of ZnO/ZnMgO heterostruc-tures grown by radical-source molecular beam epitaxy , Phys. Stat. Solidi (c) 4, No. 1, 2007, pp. 154–157

  • E. Schlenker, A. Bakin, B. Postels, A.C. Mofor, M. Kreye, C. Ronning, S. Sievers, M. Albrecht, U. Siegner, R. Kling, A. Waag Magnetic characterisation of ZnO doped with Vanadium , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 236-241

  • A. C. Mofor, A. Bakin, U. Chejarla, E. Schlenker, A. El-Shaer, G. Wagner, N. Boukos, A. Travlos and A. Waag Fabrication of ZnO Nanorod-based p-n Heterojunction on SiC Substrate , Superlattices and Microstructures, Elsevier, vol. 42, iss. 1-6, 2007, pp. 415-420

  • A. El-Shaer, A. Bakin, E. Schlenker, A. C. Mofor, G. Wagner, S. A. Reshanov and A. WaagFabrication and characterization of n-ZnO on p-SiC heterojunction diodes on 4H-SiC substrates , J. Superlattices and Microstructures, Elsevier, Volume 42, Issues 1-6, 2007, pp. 387-391

  • B. Postels, M. Kreye, H.-H. Wehmann, A. Bakin, N. Boukos, A. Travlos, D. Fuhrmann, A. Hangleiter, A. Waag Selective growth of ZnO nanorods in aqueous solution , J. Superlattices and Microstructures, Elsevier, 42, 2007, pp. 425-439

  • A C Mofor, A El-Shaer, M Suleiman, A Bakin and A Waag A two-step obtainment of quantum confinement in ZnO nanorods , Nanotechnology, 17, 2006, pp. 4859-4862

  • A. C. Mofor, A. S. Bakin, A. El-Shaer, D. Fuhrmann, F. Bertram, A. Waag Vapour Phase Growth of ZnO Nanorods , Appl. Phys. A, DOI: 10.1007/s00339-007-3961-5 (2007)

  • A. El-Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pecz, M. Kreye, A. Waag H2O2-Molecular Beam Epitaxy of high quality ZnO Journal Applied Physics A: Materials Science and Processing, Springer 88, 2007, 57

  • A.C. Mofor, F. Reuß, A. El-Shaer, R. Kling, E. schlenker, A. Bakin, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, W. Limmer, J. Eisenmenger, Th. Mueller, P. Ziemann, and A. Waag Magnetism in Zn(TM)O layers and nanorods grown on Sapphire , Journal Applied Physics A: Materials Science and Processing, Springer, vol. 88, 2007, pp. 161-166

  • A. Bakin. SiC homoepitaxy and heteroepitaxy , Invited Chapter in the book: "SiC Materials and Devices – vol. 1", ed. by M. S. Shur, S. L. Rumyantsev and M. E. Levinshtein, World Sci. (2006). ISBN 981-256-835-2

  • A. C. Mofor , A. S. Bakin, A. Elshaer, D. Fuhrmann, F. Bertram, A. Hangleiter, J. Christen and A. Waag Catalyst-free Vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20) Al2O3 , Phys. Stat. Solidi, (c) 3, No. 4, 2006, pp. 1046–1050.

  • A. El Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pécz, M. Kreye, M. Heuken, and A. Waag CBE Growth of High-Quality ZnO Epitaxial Layers , Phys. Stat. Solidi (b), V. 243, no.4, 2006, pp 768-772 .

  • A.C. Mofor, F. Reuss, A. El-Shaer, H. Ahlers, U. Siegner, A. Bakin, W. Limmer, J. Eisenmenger, Th. Mueller, P. Ziemann, and A. Waag A Study of ZnMnO as a material for magneto- and spin-electronics , Phys. Stat. Solidi (c), V.3, no. 4, 2006, pp. 1104-1108.

  • A. Che Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, J. Stoimenos. Magnetic Property investigations on Mn-doped ZnO layers on sapphire , J. Applied Physics Letters,  87, 2005, 062501.

  • A. Bakin, A. El-Shaer, A. Che Mofor, M. Kreye, A. Waag, F. Bertram, J. Christen, J. Stoimenos. MBE growth of ZnO layers on sapphire employing hydrogen peroxide as an oxidant , J. of Crystal Growth, V. 287, n. 1, 2006, pp. 7-11

  • C. Klingshirn,  H. Priller, M. Decker, J. Brückner, H. Kalt, R. Hauschild, J. Zeller, A. Waag, A. Bakin, H. Wehmann,  K. Thonke, R. Sauer, R. Kling, F. Reuss, Ch. Kirchner. Excitonic Properties of ZnO, Chapter in: Adnvances in Solid State Physics, Volume 45, 2006, pp 275-287

  • A. Che Mofor, A. El-Shaer , A. Bakin, H.-H. Wehmann, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, J. Stoimenos. Magnetic Property Investigation of ZnMnO , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 381-386 .

  • O. Schmidt, A. Geis, P. Kiesel, N. Johnson, A. Bakin, A. Waag, and G. Doehle. Analysis of a conducting channel at the native zinc oxide surface , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 8-16.

  • V. Avrutin, N. Izyumskaya, Ü. Özgür, A. El-Shaer, H. Lee, W. Schoch, F. Reuss, V.G. Beshenkov, A.N. Pustovit, A. Che Mofor, A. Bakin, H. Morkoç and A. Waag Optical and electrical properties of ZnMnO layers grown by peroxide MBE , J. Superlattices and Microstructures, Elsevier, V. 39, Iss. 1-4, 2006, pp. 291-298.

  • A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, A. Waag. High-Quality ZnO Layers Grown by MBE on Sapphire , J. Superlattices and Microstructures, Elsevier, V. 38, n. 4-6, 2005, pp. 265-271 .

  • V. Khorenko, A.C. Mofor, A. Bakin, S. Neumann, A. Guttzeit, H.-H. Wehmann, W. Prost,A. Schlachetzki and F.-J. Tegude. Buffer optimization InP-on-Si (001) Quasi-Substrates , 2004 International Conference on Indium Phosphide and Related Materials (16 th), May 31 - June 4, 2004 Kagoshima,Japan, Conference Proceedings ISBN: 0780385950, pp. 118-121

  • S.Neumann, A. Bakin, P.Velling, W.Prost, F.-J.Tegude, H.-H.Wehmann, A.Schlachetzki, F.-J.Tegude. Growth of III/V Resonant Tunneling Diode on Si Substrate with LP-MOVPE , Journal of Crystal Growth
    V. 248, 2003, pp. 380-383

  • F.B.Klose, U.Harms, H.Neuhäuser, I.Behrens, A. Bakin, and A.Schlachetzki. Mechanical Spectroscopy of Pure and Fe-Doped InP Films on Silicon Cantilevers , Defect and Diffusion Forum, Scitec Publications, Switzerland, Vols. 206-207, 2002, pp. 179-182

  • A. Bakin, D. Piester, I. Behrens, H.-H. Wehmann, E. Peiner, A. Ivanov, D. Fehly, A.Schlachetzki. Growth of InP Layers on Nanometer-Scale Patterned Si Substrates. , Journal of Crystal Growth
    & Design, American Chemical Society, Vol. 3, nr. 1, 2003, pp. 89-93 Web Release Date: November 28, 2002

  • I. Behrens, E. Peiner, A. Bakin, A.Schlachetzki. Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition , Journal of Micromechanics and Microengineering, V. 12, nr. 4, 2002, pp. 380-384

  • Klose F. B., Harms U., Neuhäuser H., Bakin A., Behrens I., Peiner E., Wehmann H.-H., Schlachetzki A., Rösler J. Elastic and anelastic properties of Fe-doped InP films on silicon cantilevers J. Appl. Phys. V. 91, 2002, pp. 9031-9038

  • Bakin A., Behrens  I. , Ivanov  A.  , Peiner  E. , Piester D. , Wehmann H.-H. , Schlachetzki A. Growth of SiC on Si(100) by LPCVD and Patterning of the Grown Layers (Proc. of the International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), Oct. 28 - Nov. 2, 2001, Tsukuba, Japan) Mater. Sci. Forum 389-393 Trans Tech Pub., Switzerland, 2002, pp.327-330.

  • Piester D., Ivanov  A. A. , Bakin A. S. , Wehmann  H.-H., Schlachetzki A.   Semiconductor nanostructures for quantum wire lasers.  in: A.V. Andreev, P.A. Apanasevich, V.I. Emel'yanov, A.P. Nizovtsev (Eds.): ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; Proc. SPIE, 4748, 2002, pp. 476-485

  • Fehly D., Schlachetzki A., Bakin A., Guttzeit A.,  and Wehmann H.H. Monolithic InGaAsP Optoelectronic Devices with  Silicon Electronics. IEEE Journal of Quantum Electronics, V. 37, No. 10, 2001, pp. 1246-1252.

  • T. Klaffs, A. A. Ivanov, A. S. Bakin, D. Piester, M. Ursu, A. Schlachetzki, L. Hvozdara, G. Strasser, B. Güttler. Intersubband absorption in d-doped InGaAs-InP multi-quantum wells.  Proc. of 3rd Intern. EuroConf. on Advanced Semiconductor Devices and Microsystems - ASDAM 2000, October 16-18 2000, Smolenice Castle, Slovakia (2000) 383-386 

  • D. Piester, A. A. Ivanov, A. S. Bakin, T. Klaffs, M. Ursu, H.-H.Wehmann, A. Schlachetzki. Homogeneity of InGaAs/InP Nano-Structures. Proc. of 3rd Intern. EuroConf. on Advanced Semiconductor Devices and Microsystems - ASDAM 2000, October 16-18 2000, Smolenice Castle, Slovakia (2000) 251-254

  • Bakin A.S., Ivanov A.A., Piester D., Riedl T., Hitzel F., Wehmann H.-H., Schlachetzki A.    Growth of SiC on Si(100) by low-pressure MOVPE. ECSCRM 2000, Kloster Banz, Germany, September 3-7, 2000. Trans Tech Publications, pp. 163-166

  • E. Peiner, K. Fricke, I.Behrens, A. Bakin, A. Schlachetzki.   Hetero-micromachining of epitaxial III/V compound semiconductors. Sensors and Actuators 85 (2000) 324-329  

  • Bakin  A.S.,  Dorozhkin  S.I., Tairov Yu.M., Lebedev A.O., Kirillov B.A., Ivanov A.A., Tairov Yu.M. Stress and misoriented area formation under large silicon carbide boule growth. Journal of Crystal Growth, v. 198/199, 1999, pp. 1015-1018.

  • Bakin  A.S.,  Dorozhkin  S.I., ZubrilovA.S., Kuznetsov N.I., Tairov Yu.M. Optically Transparent 6H-Silicon Carbide. In: Silicon Carbide. Materials Science forum (v. 264-268), 1998, pp. 53-56

  • Bakin A.S., Dorozhkin S.I., Bogachov S.S., Kazak-Kazakevich A.Z., Lyutetskaja I.G., Sazanov A.P. Surface Processing of Silicon Carbide Substrates. Materials Science and Engineering, B46, 1997, pp.370-373.

  • Kordina O., Hallin C., Ellison A., Bakin A.S., Ivanov. I., Henry. A, Yakimova. R., Tuominen M.,  Vehanen A., Janzen E. High Temperature Chemical Vapour Deposition of SiC. J. of Applied Physics Letters., v. 69, n.11, 1996, pp.1456-1460.

  • Bakin A.S., Hallin C., Kordina O., Janzen E. High Resolution XRD Study of   the Silicon Carbide CVD Growth. In: Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 433-436.

  • Hallin C., Bakin A.S., Owman F., Martensson P., Kordina O., Janzen E. Study of the Hydrogen Etching of Silicon Carbide Substrates. In: Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 3 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 613-616.

  • Avrov D.D., Bakin A.S., Dorozhkin S.I.  Migration of Isolated Pores in Silicon Carbide. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 73-76.

  • Tuominen M., Yakimova R., Bakin A.S., Ivanov. I., Henry. A, Vehanen A., Janzen E.. Control of the Rate-determining Step of the Silicon Carbide Sublimation Growth. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 45-48.

  • Yakimova R., Tuominen M., Bakin A.S., Fornell J.-O., Vehanen A., Janzén E. Silicon Carbide Liquid Phase Epitaxy in the Si-Sc-C System. Inst. Phys. Conf. Ser. No 142: Chapter 1 Paper pres. at the 6th International Conf. on Silicon carbide and Related Materials-1995 (ICSCRM '95), Kyoto, Japan, pp. 101-104.

  • Bakin A.S., Dorozhkin S.I., Tairov Yu.M. Aspects of the Crystallization of SiC from the Vapor Phase on a Substrate By the Sublimation Method. Semiconductors, V.28, n.10, 1994, pp.1021-1022

  • Bakin A.S., Zwinge G., Klockenbrink R., Wehmann H.-H., Schlachetzki A. Simulation of the Orientation-dependent Growth of InGaAs/InP by Metalorganic Vapor-Phase Epitaxy. J. Applied  Physics, V.76, n.8, 1994, pp.4906-4908.

  • Bakin A.S., Romanenko V.N., Schilz J., Nikitina G.V., Ivanov D.I. Sizes of Crystallites as a Function of Cooling Rate. Scripta Metallurgica Et Materialia, V.31, n.9, 1994, pp.1131-1134.

  • Bakin A.S., Chesnokova D.B., Jaskov D.A. The Pb1-xSnxTe Gas Phase Epitaxy. Journal of Crystal Growth, v. 94, 1989, pp.651-655.

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Андрей Бакин  


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