The epitaxy competence center ec² envisions itself as a link between university research and industry. Various forms of cooperation with the ec² are conceivable, ranging from contract research or cooperations within collaborative projects to the development of protoypes. The focus is on the optimization of the preparation and characterization of high-performance semiconductor materials based on gallium nitride for applications in light-emitting diodes, lasers or power electronics.
Currently, the ec² team conducts research in the following fields:
- Epitaxy of threedimensional LEDs (Fin LEDs) for the visible and ultraviolet spectrum
- Processing of threedimensional Fin LEDs
- Epitaxy and processing of GaN wafers for laser applications
- Laser-Lift-Off of GaN layers from the sapphire substrates by Two-photon-absorption
- Epitaxy of GaN layer stacks with highly controlled doping concentrations for the processing of threedimensional electronic devices
- Epitaxy and processing of µ-LEDs
- Pulsed Sputter Deposition of Group III-Nitrides
- Epitaxy and processing of planar LED wafers
- Characterization of planar and threedimensional GaN devices by Scanning electron microscopy, Cathodoluminescence, Energy dispersive x-ray spectroscopy, X-ray diffraction, Photoluminescence, Atomic force microscopy and further characterization tools
